MCH3145 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Adoption of MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm).
  • High allowable power dissipation. Specifications ( ) : MCH3145 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -50)80 V Collector-to-Emitter Voltage V CES (- -50)80 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)2 A Collector Current (Pulse) I CP (- -)4 A Base Current I B (- -)400 mA Collector Dissipation P C Mounted on a ceramic board (600mm25 0.8mm) 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)40V, IE=0 (- -)1 µA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0 (- -)1 µA DC Current Gain h FE VCE =(- -)2V, IC =(- -)100mA 200 560 Gain-Bandwidth Product f T VCE =(- -)10V, IC =(- -)300mA 420 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (16)8 pF Marking : MCH3145 : AN, MCH3245 : CS Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12805EA TS IM TB-00001031 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. MCH3145 / MCH3245 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

No.8211-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE (sat) I C =(- -)1A, IB=(- -)50mA (- -165)130(- -330)260 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =(- -)1A, IB=(- -)50mA (- -)0.9 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0 (- -50)80 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC =(- -)100µA, RBE =0 (- -50)80 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0 (- -)6 V Turn-ON Time t on See specified Test Circuit. (35)35 ns Storage Time t stg See specified Test Circuit. (200)330 ns Fall Time t f See specified Test Circuit. (24)40 ns Package Dimensions Switching Time Test Circuit unit : mm 2194A 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 0.250.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 3(Bottom view) (Top view) --2.0 --1.6 --1.2 --0.8 --1.0 --1.4 --1.8 --0.4 --0.2 --0.6 IC -- VCE IB =0 IC -- VCE MCH3145 MCH3245 --10mA --8mA --40mA 10mA 15mA 20mA 30mA 8mA 2mA 4mA 6mA IB =0 --4mA --6mA --2mA IT09096 IT09097 2.0 1.6 1.2 0.8 1.0 1.4 1.8 0.4 0.2 0.6 --20mA --60mA--80mA --100mA 50mA 40mA Collector-to-Emitter V oltage, VCE -- V Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- A VR R B VCC =25VVBE = --5V + + 50Ω INPUT OUTPUT R L 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC =10IB1 = --10IB2 =0.7A For PNP, the polarity is reversed.

No.8211-3/5 Cob -- VCB 5--0.1 7 --10 23 557 --1.0 2323 7 MCH3145 f=1MHz Cob -- VCB MCH3245 f=1MHz IT09104 IT09105 IT09100 IT09102 IT09103 100 hFE -- IC Ta=75°C --25°C MCH3145 V CE = --2V 25°C hFE -- IC Ta=75°C --25°C MCH3245 V CE =2V 25°C 100 fT -- IC fT -- IC MCH3245 V CE =10V 23 23 57 100 23 5 70.01 0.1 323 5 7 1.0 2 MCH3145 V CE = --10V IT09101 100 22 33 570.01 0.1 1.023 5 7 50.1 7 10 23 557 1.0 2323 7 --2.00 --1.75 --1.25 --0.75 --1.50 --1.00 --0.50 --0.25 IC -- VBE --25 Ta=75 IC -- VBE2.00 1.50 1.00 0.50 1.75 1.25 0.75 0.25 IT09098 IT09099 --25 Ta=75 MCH3245 V CE =2V MCH3145 V CE = --2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF

No.8211-4/5 VBE (sat) -- IC MCH3145 IC / IB =10 75°C Ta= --25°C VBE (sat) -- IC IT09110 IT09111 --1.0 25°C VCE (sat) -- IC --25°CTa=75 MCH3145 IC / IB =20 IT09108 --0.1 --1.0 --0.01 25°C VCE (sat) -- IC --25 °CTa=75 MCH3245 IC / IB =20 IT09109 0.1 0.01 22 35 70.10.01 31.022 35 7 25°C MCH3245 IC / IB =10 75°C Ta= --25°C 0.01 23 5 7 0.1 23 23 57 1.0 25°C 1.0 VBE (sat) -- IC MCH3145 IC / IB =20 75°C Ta= --25°C VBE (sat) -- IC IT09112 IT09113 --1.0 25°C MCH3245 IC / IB =20 75°C Ta= --25°C 0.01 23 5 7 0.1 23 23 57 1.0 25°C 1.0 VCE (sat) -- IC --25 °CTa=75 MCH3145 IC / IB =10 VCE (sat) -- IC MCH3245 IC / IB =10 IT09106 IT09107 --0.1 --0.01 25°C --25 °CTa=75 0.1 0.01 22 35 70.10.01 31.022 35 7 25°C Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V

No.8211-5/5 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS A S O IT09114 0.01 0.1 1.0 1023 5 7 23 5 7 23 5 7 23 5 7 1.0 0.1 0.01 100msDC operation 10ms IC =2A <10µs 100 µs 1ms 500 µs ICP =4A IT09115 0 20 40 60 80 100 120 140 160 0.2 0.6 0.8 0.9 0.1 0.4 0.3 0.5 0.7 PC -- Ta MCH3145 / MCH3245 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Mounted on a ceramic board (600mm 250.8mm)MCH3145 / MCH3245 Ta=25°C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm25 0.8mm)