MCH3109_06 SANYO | Alldatasheet

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Technical content

Features

  • Adoption of MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm).
  • High allowable power dissipation. Specifications ( ) : MCH3109 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -30)40 V Collector-to-Emitter Voltage V CEO (- -)30 V Emitter-to-Base Voltage V EBO (- -)5 V Collector Current I C (- -)3 A Collector Current (Pulse) I CP (- -)5 A Base Current I B (- -)600 mA Collector Dissipation P C Mounted on a ceramic board (600mm25 0.8mm) 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =(- -)30V, IE=0A (- -)0.1 µA Emitter Cutoff Current I EBO VEB =(- -)4V, IC =0A (- -)0.1 µA DC Current Gain h FE VCE =(- -)2V, IC =(- -)500mA 200 560 Gain-Bandwidth Product f T VCE =(- -)10V, IC =(- -)500mA (380)450 MHz Output Capacitance Cob V CB =(- -)10V, f=1MHz (25)20 pF Marking : MCH3109 : AJ / MCH3209 : CJ Continued on next page. 70306 / 42806 MS IM TB-00002274 / D1504EA TS IM TB-00000344 / N3001 TS IM TA-3372, 3373 MCH3109 / MCH3209 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

No.7129-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit VCE (sat)1 IC =(- -)1.5A, IB=(- -)30mA Collector-to-Emitter Saturation Voltage 120 180 mV VCE (sat)2 IC =(- -)1.5A, IB=(- -)75mA (- -)105 (- -)155 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =(- -)1.5A, IB=(- -)30mA (- -)0.83 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC =(- -)10µA, IE=0A (- -30)40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =(- -)1mA, RBE =∞ (- -)30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10µA, IC =0A (- -)5 V Turn-ON Time t on See specified Test Circuit. (50)30 ns Storage Time t stg See specified Test Circuit. (270)300 ns Fall Time t f See specified Test Circuit. (25)15 ns Package Dimensions Switching Time Test Circuit unit : mm 7019A-004 VR R B VCC =12VVBE = --5V + + 50Ω INPUT OUTPUT R L 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC =20IB1 = --20IB2 =500mA (For PNP, the polarity is reversed.) IC -- VCE IT03993 IB =0mA 200 400 600 800 0.4 0.8 1.2 1.6 2.0 1000 IC -- VCE IT03994 --2mA --4mA --6mA --8mA--10mA--30mA--40mA --50mA --20mA 2mA 4mA 50mA 6mA 20mA10mA 8mA 30mA 40mA --0.4 --0.8 --1.2 --1.6 --2.0 --1000 MCH3109 MCH3209 IB =0mA Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- A 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 0.250.250.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 0 to 0.02

No.7129-3/5 Cob -- VCB 100 --1.0 23 5 7 --10 23 5 Cob -- VCB IT04001 IT04002 IT03997 IT03999 IT03998 IT04000 100 1000 hFE -- IChFE -- IC Ta=75°C --25°C MCH 3209 V CE =2V 25°C 100 1000 fT -- IC fT -- IC 23 5 7--10 --100 23 5 7 --1000 23 100 1000 23 5 7 0.10.01 23 5 7 1.0 23 5 7 10 MCH3109 V CE = --10V 100 1000 23 5 70.01 100 23 5 7 1000 23 MCH3209 V CE =10V Ta=75°C --25°C MCH3109 V CE = --2V 25°C MCH3109 f=1MHz 100 1.0 23 5 7 10 23 5 MCH3209 f=1MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- mA IC -- VBE IT03995 3.0 2.0 1.0 2.5 1.5 0.5 3.5 --3.0 --2.0 --1.0 --2.5 --1.5 --0.5 --3.5 IC -- VBE IT03996 Ta=75 --25 Ta=75 --25 MCH3209 V CE =2V MCH3109 V CE = --2V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A

No.7129-4/5 VCE (sat) -- IC --25°C MCH 3109 IC / IB =50 VCE (sat) -- IC MCH 3209 IC / IB =50 --25°CTa=75 Ta= --25°C IT04005 IT04006 VBE (sat) -- IC VBE (sat) -- IC IT04007 IT04008 --10 --1.0 --0.1 23 5 7 --0.1--0.01 23 5 7 --1.0 23 5 7 --10 --0.01 1.0 0.1 23 5 7 0.10.01 23 5 7 1.0 23 5 7 10 0.01 --10 --1.0 --0.1 23 5 7 0.10.01 23 5 7 1.0 23 5 7 10 1.0 0.1 25°C 25°C 25°C75°C Ta= --25°C 25°C75°C Ta=75 MCH 3109 IC / IB =50 MCH 3209 IC / IB =50 0.1 23 5 7 1.0 23 5 7 10 23 5 0.1 1.0 0.01 A S O IC =3A ICP =5A 1ms IT04010 DC operation100ms 10ms 500 µs 100 µs Collector Current, IC -- A Collector Current, IC -- A Collector Current, IC -- A Collector Current, I C -- A Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V MCH3109 / MCH3209 Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (600mm 25 0.8mm) VCE (sat) -- IC --25°C MCH 3109 IC / IB =20 VCE (sat) -- IC MCH 3209 IC / IB =20 --25°CTa=75 IT04003 IT04004 --1.0 --0.1 --0.01 --0.001 1.0 0.1 0.01 23 5 7 0.10.01 23 5 7 1.0 23 5 7 10 0.001 25°C 25°C Ta=75 Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V Collector-to-Emitter Saturation V oltage, VCE (sat) -- V 1.0 0.8 0.6 0.2 0.4 Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 2006 0 40 80 100 140 120 160 PC -- Ta IT03981 Mounted on a ceramic board (600mm 250.8mm)

No.7129-5/5PS Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice.