MCH3106 SANYO | Alldatasheet

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Technical content

Features

  • Adoption of MBIT processes.
  • Large current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall package facilicates miniaturization in end products (mounting height : 0.85mm).
  • High allowable power dissipation. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH3106 Package Dimensions unit : mm 2194A [MCH3106]

20502 TS IM / 22201 TS IM TA-3071

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 0.250.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 3(Bottom view) (Top view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO - -15 V Collector-to-Emitter Voltage V CEO - -12 V Emitter-to-Base Voltage V EBO -- 5 V Collector Current I C -- 3 A Collector Current (Pulse) I CP -- 5 A Base Current I B - -600 mA Collector Dissipation P C Mounted on a ceramic board(600mm25 0.8mm) 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =- -12V, IE=0 - -0.1 µA Emitter Cutoff Current I EBO VEB =- -4V, IC =0 - - -0.1 µA DC Current Gain h FE VCE =- -2V, IC =- -500mA 200 560 Gain-Bandwidth Product f T VCE =- -2V, IC =- -500mA 280 MHz Output Capacitance Cob V CB =- -10V, f=1MHz 36 pF Collector-to-Emitter Saturation Voltage VCE (sat) I C =- -1.5A, IB=- -30mA - - -110 - - -165 mV Base-to-Emitter Saturation Voltage V BE (sat) I C =- -1.5A, IB=- -30mA - - -0.85 - - -1.2 V Marking : AF Continued on next page.

No.6861-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Collector-to-Base Breakdown Voltage V (BR)CBO IC =- -10µA, IE=0 - - -15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =- -1mA, RBE =∞ - - -12 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -10µA, IC =0 - - -5 V Turn-ON Time t on See specified Test Circuit. 30 ns Storage Time t stg See specified Test Circuit. 90 ns Fall Time t f See specified Test Circuit. 10 ns Switching Time Test Circuit VR 1kΩ VCC = --5VVBE =5V + + 50W INPUT OUTPUT R L 220µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 IC =20IB2= --20IB1= --1.5A --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --20 --40 --60 --80 --100 --120 --140 --160 --180 --200 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT02777 IT02778 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A 100 1000 1.0 hFE -- IC Collector Current, IC -- A DC Current Gain, hFE V CE = --2V V CE = --2V IT02779 IT02780 --14mA IB =0 --16mA --12mA --10mA --8mA --6mA --4mA --2mA IB =0 --0.7mA --0.6mA --0.5mA --0.4mA --0.3mA --0.2mA --0.1mA --0.8mA

No.6861-3/4 100 fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz VCE (sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V VCE (sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE (sat) -- V --0.1 --1.0 VBE (sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE (sat) -- V 1000 100 1.0 Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF f=1MHz 1000 V CE = --2V --0.001 --0.01 --0.1 --1.0 IC / IB =20 IC / IB =50 --0.01 --0.1 --1.0 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 --10 IC / IB =50 IT02785 IT02781 IT02783 IT02782 IT02784 IT02787 0.2 0.4 0.6 0.8 0.9 1.0 1.2 PC -- Ta 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W A S O Mounted on a ceramic board(600mm 250.8mm) IT02786 --0.1 --0.01 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --1.0 --10 ICP = --5A IC = --3A 500 µs1ms 10ms 100ms DC operation Ta=25°C Single pulse Mounted on a ceramic board(600mm25 0.8mm)

No.6861-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2002. Specifications and information herein are subject to change without notice. PS