MCD310-16IO1 NJSEMI | Alldatasheet

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Technical content

, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Features / Advantages:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Direct Copper Bonded AI2O3-cerarnic MCD310-16I01 Thyristor/ Diode Module VRRM = 2x 1600V ITAV=320A Vt= 1.08V TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Applications:
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control Package: Y2
  • Isolation Voltage: 3600 V~
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Base plate: DCB ceramic
  • Reduced weight
  • Advanced power cycling o i c. A T ? HI 1 M [ IX ! ' CTTI 3M8 GO 4-2.8x0.8 Quality Semi-Conductors

IT(RMS) VTD FT "thJC "thCH Ptot ITSH R PGAV (dl/dtL (dv/dt)w VQT IGT »GD 'GO IL IH tad Definition Conditions max. non-repetitive reverse/forward blocking voltage TVJ = max. repetitive reverse/forward blocking voltage reverse current, drain current forward voltage drop average forward current RMS forward current VWD= 1600V VWD = 1600V IT = 300 A IT= 600 A IT = 300 A IT= 600 A Tc= 85 °C 180° sine threshold voltage "1 , . > for power loss calculation only slope resistance J thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current latching current holding current gate controlled delay time turn-off time t= 10 ms; (50 Hz), sine t = 8,3ms; (60 Hz), sine t= 10 ms; (50 Hz), sine t = 8,3ms; (60 Hz), sine t= 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t= 10ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine Vfi= 400V f=1 MHz tp= 30 MS tp= 500 MS t Pnnne-rti /rit 1 |Q= 1A;V=%VDRM TVJ = TVJ = TVJ = TVJ = TVJ = TVJ = TVJ = To = TVJ = TVJ = TVJ = TVJ = VB = TVJ = Tc = 25°C 25°C 25°C 140°C 25°C 125°C 140°C 140°C 25°C 45°C 140°C 45°C 140°C 25°C 140°C repetitive, IT = 960 A A/II-- non-repet., IT = 320 A V = % VDRU TVj = RBK = ™; method 1 (linear voltage rise) VD = 6V VD = 6V VD= %VDRM TVJ = TVJ = TVJ = TVJ = TVJ = tp = 30 us TVJ = IB = 0.45A; dia/dt = 0.45 A/us VD=6V RQK=» V0 = Vi VDRM IQ = 1 A; dia/dt = VR = 100V; IT =320 A; di/dt= 10 A/us dv/dt = TVJ = TVJ =

1 A/MS

V = %VDRM TVJ=1

50 V/MS tp = 200

140°C 25 °C -40 °C 25 °C -40 °C 140°C 25 °C 25 °C 25 °C as mln. Rating typ. 0.040 438 200 s max. : Unit 1700 V 1600 V 1 i mA 40 | mA 1.14: V 1 .32 V 1 .08 i V 1 .30 V 320 A 500 ; A 0.80 V 0.82 mD 0.11 i K/W K/W 1030 | W 9.20 kA 9.94 kA 7.82 ; kA 8.45 kA 423.2 kA2s 410.6 kA2s 305.8 i kA2s 296.7 | kA=s | PF 120 W 60 W 20 W 100 iA/ns 500 i A/MS 1000: V/MS 2 V 3 V 150 mA 200 ! mA 0.25 i V 10 | mA 200 i mA 150 i mA 2 | MS i MS

!„„ T«fl Weight MD MT dspp/App dspb/Apb V*OL Definition Conditions RMS current per terminal virtual junction temperature operation temperature storage temperature mounting torque terminal torque terminal to terminal creepage distance on surface / striking distance through air terminal to backside isolation voltage t = 1 second . . 50/60 Hz, RMS; lisa. & 1 mA t = 1 minute min. -40 -40 -40 2.5 13.0 13.0 3600 3000 Rating; typ. 255 max. Unit 600 A 140 °C 125 °C 125 °C g 5 Nm 15 Nm mm mm V V 12000 10000 8000 'TSU |FSU 6000 [A] 4000 2000 800 600 PT 400 [W] 200 \\j = 140°(3 o-3 Fig.1 S i s k v OHz. 80% S 5°C "•« n 10* 10'1 10° 10' t [s] Surge overload current IT(F)SM: crest value, t: duration 'j[ si y V f V "~- ^~-

  • ~-- 10° ^s] 10s DC
  • — 180° sir — 12 V.-OV TVJ = 45°C, TVJ - 140"C 2 3681 t [ms] Fig. 2 Pt versus time (1-10 ms) k X ;\\. — •«= <£• m / / '//: 'fr Vr //: '/r [KrtW] - 0.2 - 0.3 - 0.4 - 0.5 - 0.6 - 0.8 - 1 - 1.4 ^k. 100 200 300 400 500 0 50 100 1 IT*™, IFAVM [A] TA [°C] 6UU 500 400 'TAVM 300 [A] 200 100 o c m 0.1 0.01 SO O.C _^^^ "^™ ^LJ / ~* .DC / ,120' JT- / '="-"- / // , 30' JT. S s^l vi ll I \\ 50 100 150 20C T rof*l C L ^J Fig. 3 Max. forward current at case temperature IT,, l=, t :Tl-25^;y A '-•••- I Jl J(! r ^ TVJ. 25 T,j. 125 01 0.01 0.1 a : izl! i:: 7> r ! _-!:.^ ^k ' . . 3- . ^^ 7 ' VPaw- 20W ' 2:?™,- 60W 3:Pm-120W C C 1 10 15 [A] Fig. 4 Power dissipation versus onstate current and* ambient temperature (per thyristor/diode) Fig. 5 Gate trigger characteristics

[W] 3000 2500 2000 1500 1000 500 C </_ S T Circuit 3xMCC310or 3xMCD310 II>^ ^x^».

  • . s ^ s^^X ^>*> -~~~ s / vX X / / / / XV
  • L~^z. IW / , / , / f '// / / / / ^Cvvi 200 400 600 800 0 50 100 IdAVM [A] TA [°C] rig. 6 Three phase rectifier bridge: Power dissipation versus [K/W] , 0.03 , 0.04 /0.06 , 0.08 , 0.1 , 0.15 , 0.2 , 0.3 LJ 100 100 [MS] 100 100 0 0.( I ::: =r -;: - ... Limit $\\\\ :5:: : S j- 258C 11 0.1 1 1C IQ[A] Fig. 7 Gate trigger delay time direct output current and ambient temperature