MCD200-16IO1 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

<^£mi-(2onau.ctoi LPioaucti, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MCD200-16IO1 Thyristor/ Diode Module VRRM=2X1600v ITAV = 216A VT=1.1V TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Features / Advantages:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Direct Copper Bonded AI2O3-ceramic Applications:
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control Package: Y4
  • Isolation Voltage: 3600 V~
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Base plate: DCB ceramic
  • Reduced weight
  • Advanced power cycling Quality Semi-Conductors

ITIRMS) VTO rT "*JC "thCH ITS- PI PGM PGAV (di/dt)gr (dv/dtjc, VOT IGT " GD IGD IL IH t,d Definition Conditions max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current forward voltage drop average forward current RMS forward current VB,D- 1600V Vm = 1600V IT = 200 A IT= 400 A IT = 200 A IT= 400 A Tc= 85°C 180° sine threshold voltage ~\\ .. > for power loss calculation only slope resistance J thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current latching current holding current gate controlled delay time turn-off time 1 = 10 ms; (50 Hz), sine t- 8,3ms; (60 Hz), sine 1 = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t= 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t= 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400V f=1 MHz tp= 30 [IS tp = 500 \\is TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ =125°C TVJ = 25°C TVJ =125°C TVJ=125"C TVJ=125°C Tc = 25°C TVJ= 45°C VR =OV TVJ =125°C VR =OV TVJ = 45°C VR =OV Tw =125°C VR =OV TVJ = 25°C Tc =125°C Tw = 125°C; f = 50 Hz repetitive, IT = 600 A t 9OO i ic -Hi /Ht 0 R A/I ic- IG= 0.5A; V = % VDRM non-repet., IT = 200 A V = % VDRM ROK = °°; method 1 (linear voltage rise VD = 6V VD = 6V VD= %VORM tp = 30 \\iS IG = 0.5A; diG/dt = 0.5 A/us VD = 6V RQK = « VD=1/*VDRM IG = 0.5A; diG/dt = 0.5 A/us VR = 100V; IT =300A;V = % VDRM di/dt = 1 0 A/us dv/dt = 50 V/ns tp • TVj= 125°C TVJ= 25°C TVJ = -40°C TVJ= 25°C TVJ = -40°C TVJ=125°C TVJ= 25°C TVJ= 25°C TVJ= 25°C TVJ=100°C = 200 \\is min. Rating) typ. 0.050 366 200 I max. Unit 1700 V 1600 V 400 HA 15 mA 1.20 V 1.52 V 1.10 V 1.50 V 216 A 340 A 0.80 V 1.4 mQ

0.13 K/W

8.00 kA 8.64 kA 6.80 kA 7.35 kA 320.0 kA2s 310.5 kA2s 231.2 kA2s 224.4 kA2s pF 120 W 60 W 20 W

100 A/us

500 A/us

1000 V/ns

0.25 V 10 mA 200 mA 150 mA 2 \\is US

T«g Weight MD Mr dspp/App dspb/Apb v,SOL Definition Conditions RMS current per terminal virtual junction temperature operation temperature storage temperature mounting torque terminal torque terminal to terminal 1 4.0 creepage distance on surface / striking distance through air terminal to backside 1 6.0 isolation voltage t = 1 second 50/60 Hz, RMS; IISCH. * 1 mA t = 1 minute mln. -40 -40 -40 2.25 4.5 10.0 16.0 3600 3000 Sating! typ- 150 max. Unit 300 A 125 °C 100 "C 125 °C 2.75 Nm 5.5 Nm mm mm V V 8000 6000 'TSM 4000 [A] 2000 k s b ' s t Hill 50 Hz 80% VHFM TVJ s = 45°C = 125-C S s 10« [A2s] 104 125-C 400 0.001 0.01 0.1 t [s] t [ms] Fig. 1 Surge overload current ITCM, Fig. 2 ft versus time (1-10 ms) IFSM: Crest value, t: duration 0 25 50 75 100 125 150 Fig. 3 Max. forward current at case temperature 400 300 [W] 200 100 0 100 200 300 0 25 50 75 100 125 150 ITAVM [A] Ta [°C] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) M 0.1 1:IGT,TVJ=12S°C 2: IST, TUJ = 25=C 3: IQT. TVJ - -40°C f s i O'C , ' f f .':! f J I 'n. 5: POM 6: Pa, V = e .12 V ow ow 10-2 10-1 10° 101 102 IG [A] Fig. 5 Gate trigger characteristics

[W] 800 400 R,WAK/W_ -0.02 :0.tW

  • 0.06
  • 0.10 '0.20 0.30 0 200 400 600 0 25 50 75 100 125 150 IdAVM [A] Ta [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 7 Gate trigger delay time