MCC56-12IO1B NJSEMI | Alldatasheet

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Technical content

-Tit-i Szml-ConcLictoi iPioclucki, Line. 20 STERN/WE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 MCC56-12IO1B VRRM = 2X1200 V ITAV = 60A VT= 1.24V

FEATURES

Thyristor for line frequency Planar passivated chip Long-term stability Direct copper bonded AI2O3 ceramic

APPLICATIONS

Softstart Ac motor control DC Motor control Power converter AC power control Lighting and temperature control PACKAGE: TO240AA Isolation Voltage 3600V Industry standard outline Rohs compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling

VRSM'DSM VRRMDRM IR/D VT ITAV

1 T(RMS)

"thJC thCH Ptot ITSH Pt Cj PGM POAV (di/dt)cr (dv/dt)cr VGT IQT VGD IGD IL IN tad Definition Conditions max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current forward voltage drop average forward current RMS forward current VR/D= 1200V VR,D= 1200V IT = 100 A IT= 200 A IT = 100A IT= 200 A Tc= 85°C 180° sine TVJ = 25°C Tw = 25°C Tw = 25°C TVJ = 1 25°C TVJ = 25°C TVJ =125°C TVJ =125°C threshold voltage ~\\VJ =125°C . . > for power loss calculation only slope resistance J thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current value for fusing junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current latching current holding current gate controlled delay time turn-off time t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t= 10ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t= 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VR = 400V f=1 MHz tp= 30 us tp= 300 us TVJ = 1 25 °C ; f = 50 Hz repetitive t 200 us' di /dt 045 A/us1 Tc = 25°C TVJ = 45°C VR =OV TVJ =125°C VR =0 V TVJ = 45°C VR =OV TVJ =125°C Vn =OV TVJ = 25"C Tc =125°C , IT = 150 A la= 0.45 A; V = % VDHU non-repet., IT = 60 A V = %VDRU RGK = °°; method 1 (linear voltage rise) VD = 6V VD = 6V VD= %VDRM tp= 10ns IG = 0.45 A; diG/dt = 0.45 A/US VD=6V RGK = » VD = V4 VDRM I0 = 0.45 A; diG/dt = 0.45 A/us Tw= 125°C TVJ= 25°C TVJ = -40 °C Tw= 25°C TVJ = -40 °C TVJ = 1 25°C TVJ= 25°C Tw= 25°C TVJ= 25°C VR = 100 V; IT = 150 A; V = % VDRM TVJ =100 °C di/dt = 1 0 A/us dv/dt = 20 V/us tp = 200 us min. Ratings typ. 0.20 150 t max. 1300 1200 200 1.26 1.57 1.24 1.62 0.85 3.7 0.45 Unit V V uA mA V V V V A A V mQ K/W K/W 222 1.50 1.62 1.28 1.38 11.3 10.9 8.13 7.87 W kA kA kA kA kA2s kA2s kA2s kA2s pF 0.5 150 500 1000 1.5 1.6 100 200 0.2 450 200 W W W A/us A/us V/us V V mA mA V mA mA mA us us

IB TO*246AA Definition RMS current virtual junction temperature operation temperature Conditions per terminal T,,g storage temperature Weiqht MT dspp/App d 5pb/Apb ISOL mounting torque terminal torque terminal to terminal 13.0 creepage distance on surface / striking distance through air ,,.,._, terminal to backside 16.0 isolation voltage t = 1 second 50/60 Hz, RMS; IISOL S 1 mA t = 1 minute f mln. -40 -40 -40 2.5 2.5 9.7 16.0 3600 3000 (atmgs typ. max. 200 125 100 125 Unit A g Mm Nm : mm mm V I v 05.5 M5x10 /2.8/OB I 5