MCA3703 SEME-LAB | Alldatasheet
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Technical content
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. VDS Drain Source Voltage ID Continuous Drain Current ID @ Tc = 100°C Continuous Drain Current IDM Pulsed Drain Current * VGS Gate Source Voltage PD Maximum Power Dissipation R θJC Thermal Resistance Junction to Case TJ,Tstg Operating and Storage Temperature Range 100V 0.6A ±20V 3.5W 35.7°C/W -55 to +150°C MECHANICAL DATA Dimensions in mm (inches) QUAD N–CHANNEL ENHANCEMENT MOSFETS ABSOLUTE MAXIMUM RATINGS FOR EACH CHIP (Tcase = 25°C unless otherwise stated)
APPLICATIONS
FAST SWITCHING MOTOR CONTROLS POWER SUPPLIES LCC18 Ceramic Package 8.89 (0.350) 1.27 (0.050) typ. 7.24 (0.285) 0.65 (0.025) typ. 2.54 (0.100) 1.14(0.045) typ 0.23 (0.009) Rad. 18 plcs 0.30 (0.012) Rad. 4 plcs 1.14 – 0.15 (0.045 – 0.006) 1.40 (0.055) Nom. 34567 12 13 14 16 Pin 1 - Drain 1 Pin 4 - Source 1 Pin 7 - Source 2 Pin 10 - Drain 3 Pin 13 - Gate 3 Pin 16 - Gate 4 Pin 2 - N/C Pin 5 - Gate 2 Pin 8 - N/C Pin 11 - N/C Pin 14 - Source 4 Pin 17 - N/C Pin 3 - Gate 1 Pin 6 - N/C Pin 9 - Drain 2 Pin 12 - Source 3 Pin 15 - N/C Pin 18 - Drain 4
FEATURES
HERMETIC CERAMIC SURFACE MOUNT PACKAGE LIGHTWEIGHT MILITARY SCREENING LEVEL OPTIONS SPACE QUALITY LEVELS OPTIONS
Parameter Test Conditions Min. Typ. Max. Unit V nA µA Ω S ( ) pF nC ns A V ns µC MCA3703 Document Number 5519 Issue 1 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. 100 2.0 4.0 100 -100 250 0.70 0.80 0.86 180 7.5 7.5 1.0 4.0 1.5 200 0.83 V GS = 0 I D = 1mA VDS = VGS ID = 250µA VGS = 20V VGS = -20V VDS = 80V. V GS =0 TC = 125°C VGS = 10V I D = 0.6A VGS = 10V ID = 1.0A VDS = 15V I DS = 0.6A VGS = 0 V DS = 25V f = 1MHz VGS = 10V V DS = 50V IDS = 1.0A VDD = 50V I D = 1.0A R G = 24Ω (MOSFET switching times are essentially independent of operating temperature.) Modified MOS POWER symbol showing the intergal P-N junction rectifier. IS = 1.0A V GS = 0 IF =1.0A T J = 25°C di/ dt= 100A/µsV DD = 50V ELECTRICAL CHARACTERISTICS FOR EACH CHIP (Tcase = 25°C unless otherwise stated) Drain – Source Breakdown Voltage Gate Threshold Voltage Gate – Source Leakage Forward Gate – Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain Source On-State Resistance* Forward Transductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current Body Diode Source Current* (Body Diode) Diode Forward Voltage * Reverse Recovery Time Reverse Recovery Charge BV DSS VGS(th) IGSSF IGSSR IDSS R DS(on) gfs C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf IS ISM VSD trr Q RR BODY– DRAIN DIODE RATINGS & CHARACTERISTICS /G44 /G53 /G47 Ω Notes * Pulse Test: Pulse Width ≤ 300µs, δ≤ 2%