MCA104

MCA104 SEME-LAB | Alldatasheet

Document overview

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Technical content

Prelim. 4/00 MCA104 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. ABSOLUTE MAXIMUM RATINGS VCBO Collector - Base Voltage VCEO Collector - Emitter Voltage VEBO Emitter - Base Voltage IC Collector Current (per device) PD Power Dissipation (per device) sj-a Thermal Resistance (junction to ambient) Tj,Tstg Storage, Junction Temperature 75V 40V 600mA 350mW -60V - 60V 600mA 350mW

DESCRIPTION

The MCA104 is a ceramic surface mount transistor array designed for high reliability applications. It contains 2 NPN Bipolar Transistors and 2 PNP Bipolar Transistors. MECHANICAL DATA Dimensions in mm (inches) /G38/G2E /G38/G39/G20 /G28 /G30 /G2E /G33/G35/G30/G29 /G31/G2E /G32/G37/G20 /G28 /G30 /G2E /G30/G35/G30/G29 /G74/G79 /G70 /G2E /G37/G2E /G32/G34/G20 /G28 /G30/G2E /G32/G38/G35/G29 /G30/G2E /G36/G35/G20 /G28 /G30/G2E /G30/G32/G35/G29 /G74/G79 /G70 /G2E /G32/G2E /G35/G34 /G28 /G30 /G2E /G31/G30/G30/G29 /G31/G2E /G31/G34/G28 /G30/G2E /G30/G34/G35/G29 /G74/G79 /G70 /G30/G2E /G32/G33 /G28/G30 /G2E /G30 /G30 /G39 /G29 /G52 /G61/G64/G2E /G31/G38/G20 /G70/G6C /G63 /G73 /G30/G2E /G33/G30 /G28 /G30 /G2E /G30/G31/G32/G29 /G52/G61 /G64 /G2E /G34/G20 /G70/G6C /G63 /G73 /G31/G2E /G31/G34/G20 /GB1 /G20 /G30/G2E /G31/G35 /G28 /G30 /G2E /G30/G34/G35/G20 /GB1 /G20 /G30/G2E /G30/G30/G36/G29 /G31/G2E /G34/G30 /G28 /G30 /G2E /G30/G35/G35/G29 /G4E/G6F /G6D /G2E /G31 /G31/G35 /G32 /G33 /G34 /G35 /G36 /G37 /G38 /G39 /G31/G30 /G31/G31 /G31/G32 /G31/G33 /G31/G34 /G31/G36 /G31/G37 /G31/G38

FEATURES

• Ceramic Surface Mount Package.  Screening Options Available NPN DEVICES  VCBO = 75V  VCBO = 400V  IC = 600mA PNP DEVICES  VCBO = 60V  VCEO = 60V  IC = /G36/G30/G30 mA NPN 2 = E1 3 = B1 4 = C1 PNP 6 = C2 7 = B2 8 = E2 PNP 11 = E3 12 = B3 13 = C3 NPN 15 = C4 16 = B4 17 = E4 NPN Channel PNP Channel 350°C -55 to +200°C MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE 1,5,9,10,14,18 NO CONNECTION Pinout:

IC = 20mA V CE = 20V f =100MHz VCB = 10V I E = 0 f = 1.0MHz VBE = 0.5V I C = 0 f = 1.0MHz IC = 1mA V CE = 10V f = 1kHz IC = 10mA V CE = 10V f = 1kHz Prelim. 4/00 MCA104 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit td Delay Time tr Rise Time ts Storage Time tf Fall Time Parameter Test Conditions Min. Typ. Max. Unit Parameter Test Conditions Min. Typ. Max. Unit IC = 10mA IC = 10/G6D A IE = 10/G6D AI C = 0 IB = 0 V CE = 60V IE = 0 V CB = 60V TC = 125°C IC = 0 V EB = 3V (off) VCE = 60V V EB = 3V (off) IC = 150mA I B = 15mA IC = 500mA I B = 50mA IC = 150mA I B = 15mA IC = 500mA I C = 50mA IC = 0.1mA V CE = 10V IC = 1mA V CE = 10V IC = 10mA V CE = 10V IC = 10mA V CE = 10V IC = 150mA V CE = 10V IC = 150mA V CE = 1V IC = 500mA V CE = 10V ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) NPN DEVICES VCEO(sus)* Collector – Emitter Sustaining Voltage V(BR)CBO* Collector – Base Breakdown Voltage V(BR)EBO* Emitter – Base Breakdown Voltage ICEX* Collector Cut-off Current (IC = 0) ICBO* Collector – Base Cut-off Current IEBO* Emitter Cut-off Current (IC = 0) IBL* Base Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* DC Current Gain TA = –55°C 0.3 0.6 1.2 100 300 V V V nA nA /G6D A nA nA V V f T Transition Frequency C ob Output Capacitance C ib Input Capacitance hfe Small Signal Current Gain 300 50 300 75 375 MHz pF pF 225 ns ns ns ns VCC = 30V V BE = 0.5V (off) IC1 = 150mA I B1 = 15mA VCC = 30V I C = 150mA IB1 = IB2 = 15mA fT is defined as the frequency at which hFE extrapolates to unity. * Pulse test tp = 300/G6D s , /G64/G20/GA3/G20 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) NPN DEVICES SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (Tcase = 25°C unless otherwise stated)

Prelim. 4/00 MCA104 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit VCC = 30V IC = 150mA IB1 = 15mA VCC = 6V IC = 150mA IB1 = IB2 = 15mA Parameter Test Conditions Min. Typ. Max. Unit Parameter Test Conditions Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) PNP DEVICES IC = 10mA IC = 10/G6D A IE = 10/G6D AI C = 0 VCE = 30V V BE = 0.5V IE = 0 V CB = 50V TC = 125°C VCE = 30V V BE = 0.5V IC = 150mA I B = 15mA IC = 500mA I B = 50mA IC = 150mA I B = 15mA IC = 500mA I B = 50mA IC = 0.1mA V CE = 10V IC = 1mA V CE = 10V IC = 10mA V CE = 10V IC = 150mA V CE = 10V IC = 500mA V CE = 10V VCEO(sus)* Collector – Emitter Sustaining Voltage V(BR)CBO* Collector – Base Breakdown Voltage V(BR)EBO* Emitter – Base Breakdown Voltage ICEX* Collector Cut-off Current ICBO* Collector – Base Cut-off Current IBEO Base Cut-off Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* DC Current Gain –60 –60 0.01 –0.4 –1.6 –1.3 –2.6 100 100 100 300 V V V nA /G6D A nA V V f T Transition Frequency C ob Output Capacitance C ib Input Capacitance IC = 50mA V CE = 20V f = 100MHz VCB = 10V I E = 0 f = 1.0MHz VBE = 2V I C = 0 f = 1.0MHz 200 MHz pF pF t on Turn-on Time td Delay Time tr Rise Time toff Turn-off Time ts Storage Time tf Fall Time 26 45 6.0 10 20 40 70 100 50 80 20 30 ns ns ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) * Pulse test tp = 300/G6D s , /G64/G20/GA3/G20 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) PNP DEVICES