MCA0401

MCA0401 SEME-LAB | Alldatasheet

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Technical content

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information fur nished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any error s or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. ABSOLUTE MAXIMUM RATINGS MULTI-CHIP ARRAY PD Total Power Dissipation @ TA = 25°C Derate above 25°C TA Operating Temperature Range TSTG Storage Temperature Range TSOL Soldering Temperature @ /G44 t = 10secs R/G71 JA Thermal Resistance Junction to Ambient /G38/G2E /G38/G39/G20 /G28 /G30 /G2E /G33/G35/G30/G29 /G31/G2E /G32/G37/G20 /G28 /G30 /G2E /G30/G35/G30/G29 /G74/G79 /G70 /G2E /G37/G2E /G32/G34/G20 /G28 /G30/G2E /G32/G38/G35/G29 /G30/G2E /G36/G35/G20 /G28 /G30/G2E /G30/G32/G35/G29 /G74/G79 /G70 /G2E /G32/G2E /G35/G34 /G28 /G30 /G2E /G31/G30/G30/G29 /G31/G2E /G31/G34/G28 /G30/G2E /G30/G34/G35/G29 /G74/G79 /G70 /G30/G2E /G32/G33 /G28/G30 /G2E /G30 /G30 /G39 /G29 /G52 /G61/G64/G2E /G31/G38/G20 /G70/G6C /G63 /G73 /G30/G2E /G33/G30 /G28 /G30 /G2E /G30/G31/G32/G29 /G52/G61 /G64 /G2E /G34/G20 /G70/G6C /G63 /G73 /G31/G2E /G31/G34/G20 /GB1 /G20 /G30/G2E /G31/G35 /G28 /G30 /G2E /G30/G34/G35/G20 /GB1 /G20 /G30/G2E /G30/G30/G36/G29 /G31/G2E /G34/G30 /G28 /G30 /G2E /G30/G35/G35/G29 /G4E/G6F /G6D /G2E /G31 /G31/G35 /G32 /G33 /G34 /G35 /G36 /G37 /G38 /G39 /G31/G30 /G31/G31 /G31/G32 /G31/G33 /G31/G34 /G31/G36 /G31/G37 /G31/G38 1.15W 11.5mW/°C -55 to +125°C -55 to +150°C 230°C 87°C/w

FEATURES

• Silicon NPN & PNP Epitaxial Transistors  Silicon Schottky Diode  Hermetic Ceramic Surface Mount Package  Small Size, Low Weight  High Reliability  Various Screening Options /G31 /G31/G36 /G31/G32 /G39 /G31/G30 /G37 /G33 /G31/G35 /G31/G33 Mechanical Data Dimensions in mm (inches) Case Style LCC6 Underside View Circuit Diagram

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information fur nished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any error s or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit V nA V V MHz pF pF ns ns – 12 – 12 – 4 – 10 – 80 –0.15 –0.20 – 0.50 –0.78 –0.98 –0.85 –1.2. –1.7 40 150 400 I C = 10/G6D AI E = 0 IC = 10mA I B = 0 IE = 10/G6D AI C = 0 VCB = –6V T amb = 125°C VBE = 0 V CE = –6V IC = –10mA I B = –1mA IC = –30mA I B = –3mA IC = –100mA I B = –10mA IC = –10mA I B = –1mA IC = –30mA I B = –3mA IC = –100mA I B = –10mA IC = –10mA V CE = –0.3V IC = –30mA V CE = –0.5V IC = –100mA V CE = –1V IC = –30mA V CE = –0.5V Tamb = 125°C VCE = –10V f = 100MHz IC = –30mA VEB = –5V I C = 0 f = 1MHz V CB = –5V I C = 0 f = 1MHz I C = –30mA V CE = –2V IB2 = –1.5mA IC = –30mA V CE = –2V IB1 = IB2= –1.5mA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PNP TRANSISTOR V(BR)CBO* Collector – Base Breakdown Voltage V(BR)CEO Collector – Emitter Breakdown Voltage V(BR)EBO Emitter – Base Breakdown Voltage ICBO Collector Cut-off Current ICES Collector Cut-off Current VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter On Voltage hFE DC Current Gain fT Current Gain Bandwidth Product Cebo Emitter – Base – Capacitance Ccbo Collector – Base – Capacitance ton Turn on Time toff Turn off Time * Pulse Test: t p /GA3 300/G6D s, /G64/GA3 2%.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information fur nished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any error s or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit IC = 10mA IC = 10/G6D A IE = 10/G6D A VCE = 20V VCE = 10V TA = +150°C VCB = 20V TA = +125°C VEB = 4V IC = 10mA I B = 1mA TA = +150°C IC = 30mA I B = 3mA IC = 100mA I B = 10mA IC = 10mA T A = +25°C IB = 1mA T A = +150°C TA = –55°C IC = 30mA I B = 3mA IC = 100mA I B = 10mA IC = 10mA V CE = 0.35V IC = 30mA V CE = 0.40V IC = 10mA V CE = 1V TA = –55°C IC = 100mA V CE = 1V IC = 10mA V CE = 10V f = 100MHz V CB = 5V I E = 0 f = 100kHz to 1MHz V EB = 0.5V I C = 0 f = 100kHz to 1MHz I C = 10mA IB1 = –IB2 = 10mA IC = 10mA IB1 = 3mA I B2 = –1.5mA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) NPN TRANSISTOR V(BR)CEO* Collector – Emitter Breakdown Voltage V(BR)CBO Collector – Base Breakdown Voltage V(BR)EBO Emitter – Base Breakdown Voltage ICES Collector – Emitter Cut-off Current ICBO Collector – Base Cut-off Current IEBO Emitter – Base Cut-off Current VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage hFE* Current Gain |hfe| Magnitude of h fe Cob Output Capacitance Cib Input Capacitance ts Storage Time ton Turn–On Time toff Turn–Off Time 4.5 0.40 0.30 0.20 0.25 0.20 0.30 0.25 0.43 0.70 0.85 0.59 1.02 0.90 1.20 40 120 30 120 40 120 20 120 51 0 V V V /G6D A /G6D A /G6D A V V pF ns ns * Pulse Test: tp /GA3 300/G6D s, /G64/GA3 2%.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information fur nished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any error s or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit IR* Reverse Current VF* Forward Voltage V(BR) Breakdown Voltage C Capacitance t Effective Minority Carrier Lifetime T amb = 25°C V R = 50V Tamb = 25°C I F = 1mA Tamb = 25°C I F = 15mA Tamb = 25°C I R = 10/G6D A Tamb = 25°C V R = 0V f = 1MHZ Tamb = 25°C I F = 5mA 0.2 0.41 100 /G6D A V V P F ps ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) SCHOTTKY DIODE * Pulse test /GA3 300/G6D s , /G64/G20/GA3 2%