MCA002

MCA002 SEME-LAB | Alldatasheet

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Technical content

Prelim. 9/99 MCA002 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. ABSOLUTE MAXIMUM RATINGS MULTI-CHIP ARRAY

4 COMMON SOURCE

ID Continuous Drain Current (per device) (25°C) PD Power Dissipation (per device) sj-c Thermal Resistance (junction to case) sj-a Thermal Resistance (junction to ambient) Tj,Tstg Storage, Junction Temperature +60V ±30V 200mA 0.5W -60V ±30V 200mA 0.5W

DESCRIPTION

The MCA002 is a ceramic surface mount Mosfet array designed for high reliability applications. It contains 4 common source P Channel Mosfets and 4 common source N Channel Mosfets. MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL DEVICES : 1-4 P-CHANNEL DEVICES : 5-8 /G38/G2E /G38/G39/G20 /G28 /G30 /G2E /G33/G35/G30/G29 /G31/G2E /G32/G37/G20 /G28 /G30 /G2E /G30/G35/G30/G29 /G74/G79 /G70 /G2E /G37/G2E /G32/G34/G20 /G28 /G30 /G2E /G32 /G38/G35/G29 /G30/G2E /G36/G35/G20 /G28 /G30/G2E /G30/G32/G35/G29 /G74/G79 /G70 /G2E /G32/G2E /G35/G34 /G28 /G30 /G2E /G31/G30/G30/G29 /G31/G2E /G31/G34/G28 /G30/G2E /G30/G34/G35/G29 /G74/G79 /G70 /G30/G2E /G32/G33 /G28/G30 /G2E /G30 /G30 /G39 /G29 /G52 /G61/G64/G2E /G31/G38/G20 /G70/G6C /G63 /G73 /G30/G2E /G33/G30 /G28 /G30 /G2E /G30/G31/G32/G29 /G52/G61 /G64 /G2E /G34/G20 /G70/G6C /G63 /G73 /G31/G2E /G31/G34/G20 /GB1 /G20 /G30/G2E /G31/G35 /G28 /G30 /G2E /G30/G34/G35/G20 /GB1 /G20 /G30/G2E /G30/G30/G36/G29 /G31/G2E /G34/G30 /G28 /G30 /G2E /G30/G35/G35/G29 /G4E/G6F /G6D /G2E /G31 /G31/G35 /G32 /G33 /G34 /G35 /G36 /G37 /G38 /G39 /G31/G30 /G31/G31 /G31/G32 /G31/G33 /G31/G34 /G31/G36 /G31/G37 /G31/G38 /G47/G38 /G44/G38 /G44/G31 /G47/G31 /G47/G32 /G44/G32 /G44/G33 /G47/G33 /G4E/G2D /G43/G48/G41 /G4E /G4E/G45 /G4C /G43/G4F /G4D /G4D /G4F /G4E/G20 /G53 /G4F /G55/G52/G43/G45 /G47 /G35 /G44/G35 /G44/G34 /G47 /G34 /G50/G2D /G43 /G48/G41/G4E /G4E /G45 /G4C /G43/G4F /G4D /G4D /G4F /G4E /G20 /G53 /G4F /G55 /G52/G43/G45 /G47/G36 /G44/G36 /G44/G37 /G47/G37

FEATURES

 Ceramic Surface Mount Package.  Screening Options Available N-CHANNEL DEVICES  V(BR)DSS = 60V  ID = 200mA  RDS(ON)MAX = 5/G57  Common Source Connection P-CHANNEL DEVICES  V(BR)DSS = -60V  ID = 200mA  RDS(ON)MAX = 10/G57  Common Source Connection 1 = D3 2 = G3 3 = G4 4 = D4 6 = D5 7 = G5 8 = G6 9 = D6 10 = D7 11 = G7 12 = G8 13 = D8 15 = D1 16 = G1 17 = G2 18 = D2 Pin14= N-Channel Common Source (devices1,2,3,4) Pin 5 = P-Channel Common Source (devices 5,6,7,8) N Channel P Channel 30°C/W 60°C/W -55 to +150°C

Parameter Test Conditions Min. Typ. Max. Unit V V nA µA mA /G57 mS /G6D S pF ns Prelim. 9/99 MCA002 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. VGS = 0 I D = 100µA VDS = VGS ID = 1mA VDS = 0V V GS = ±30V VDS = 50V VGS = 0V T J = 125°C VDS = 10V V GS = 10V VGS = 4.5V I D = 75mA VGS = 10V I D = 0.2A TJ = 125°C VDS = 10V I D = 0.5A VDS = 5V I D = 50mA VDS = 25V V GS = 10V f = 1MHz VDD = 15V, RL = 23/G57 , ID = 0.6A VGEN = 10V, RG = 25/G57

ELECTRICAL CHARACTERISTICS

N-Channel (per device)(TA = 25°C Unless otherwise noted). Drain – Source Breakdown Voltage Gate Threshold Voltage Gate – Body Leakage Zero Gate Voltage Drain Current On–State Drain Current2 Drain – Source On–Resistance1 Forward Transconductance1 Common Source Output Conductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Turn–Off 60 70 0.8 2.3 2.5 0.02 750 1000 5 7.5 2.5 5 4.4 230 500 V (BR)DSS VGS(th) IGSS IDSS ID(on) rDS(ON) gfs gos C iss C oss C rss td(on) td(off) STATIC ELECTRICAL RATINGS DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS

1 Pulse test: PW = /GA3/G20 300/G6D S, Duty Cycle /GA3 2%

2 Pulse width limited by maximum junction temperature.

Parameter Test Conditions Min. Typ. Max. Unit Drain – Source Breakdown Voltage Gate Threshold Voltage Gate – Body Leakage Zero Gate Voltage Drain Current On–State Drain Current1 Drain – Source On–Resistance1 Forward Transconductance1 Common Source Output Conductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Turn–Off Delay Time -60 -70 -1 -1.7 -2.4 -0.02 -0.2 -50 -80 11 25 61 0 400 VGS = 0 I D = -10µA VDS = VGS ID = -1mA VDS = 0V V GS = ±20V TJ = 125°C VDS = -48V V GS = 0V TJ = 125°C VDS = -10V V GS = -4.5V VGS = -4.5V I D = -25mA VGS = -10V I D = -0.2A TJ = 125°C VDS = -10V I D = -0.1A VDS = -25V V GS = 0V f = 1MHz VDD =-25V, RL=133/G57 , ID = -0.18A VGEN = -10V, RG = -25/G57 V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(ON) gfs gos C iss C oss C rss td(on) tr td(off) tr Prelim. 9/99 MCA002 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. V V nA µA mA /G57 mS /G6D S pF ns P-Channel (per device)(TA = 25°C Unless otherwise noted). STATIC ELECTRICAL RATINGS SWITCHING CHARACTERISTICS 2 Pulse width limited by maximum junction temperature. DYNAMIC CHARACTERISTICS