MC13156DW

ML13156 LANSDALE | Alldatasheet

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www.lansdale.com ML13156 Wideband FM IF System Page 1 of 21 Issue A Legacy Device: Motorola MC13156 The ML13156 is a wideband FM IF subsystem targeted at high per- formance data and analog applications. The ML13156 has an onboard grounded collector VCO transistor that may be used with a fundamen- tal or overtone crystal in single channel operation or with a PLL in multichannel operation. The mixer is useful to 500 MHz and may be used in a balanced–differential, or single–ended configuration. The IF amplifier is split to accommodate two low cost cascaded filters. RSSI output is derived by summing the output of both IF sections. A preci- sion data shaper has a hold function to preset the shaper for fast recov- ery of new data. and other radio systems utilizing GMSK, FSK, or FM modulation.

• 2.0 to 6.0 Vdc Operation
• T ypical Sensitivity at 200 MHz of 2.0 µV for 12 dB SINAD
• RSSI Dynamic Range T ypically 80 dB
• High Performance Data Shaper for Enhanced CT–2 Operation
• Internal 330 Ωand 1.4 kΩTerminations for 10.7 Mhz and 455 kHz Filters
• Split IF for Improved Filtering and Extended RSSI Range
• 3rd Order Intercept (Input) of –25 dBm (Input Matched)
• Operating Temperature Range – TA = –40 to +85°C SO 24W = -6P PLASTIC PACKAGE CASE 751E (SO-24L) QFP 32 = -8P PLASTIC QFP PACKAGE CASE 873 CROSS REFERENCE/ORDERING INFORMATION MOTOROLA SO 24W MC13156DW ML13156-6P QFP 32 MC13156FB ML13156-8P LANSDALEPACKAGE Note: Lansdale lead free ( Pb) product, as it becomes available, will be identified by a part number prefix change from ML to MLE. PIN CONNECTIONS Function RF Input 1 RF Input 2 Mixer Output VCC1 IF Amp Input IF Amp Decoupling 1 IF Amp Decoupling 2 VCC Connect (N/C Internal) IF Amp Output VCC2 Limiter IF Input Limiter Decoupling 1 Limiter Decoupling 2 VCC Connect (N/C Internal) Quad Coil Demodulator Output Data Slicer Input VCC Connect (N/C Internal) Data Slicer Ground Data Slicer Output Data Slicer Hold VEE2 RSSI Output/Carrier Detect In Carrier Detect Output VEE1 and Substrate LO Emitter LO Base VCC Connect (N/C Internal) 12, 13, 14 28, 29, 30 SO–24L QFP Simplified Block Diagram 18192022 1314151617212324 1210987654321 LIM DEC 2 LIM DEC 1 LIM In VCC2IF Out IF DEC 2 IF DEC 1 IF In VCC1Mix Out RF In 2 RF In 1 Quad CoilDemod DS In DS Gnd Data Out DS HoldVEE2RSSI CAR DetVEE1 LO Emit LO In Bias 5.0 pF Data Slicer LIM Amp IF Amp Bias Mixer NOTE: Pin Numbers shown for SOIC package only. Refer to Pin Assignments Table. This device contains 197 active transistors.

ML13156 LANSDALE Semiconductor, Inc. MAXIMUM RATINGS Rating Pin Symbol Value Unit Power Supply Voltage 16, 19, 22 VEE(max) –6.5 Vdc Junction Temperature – TJ(max) 150 °C Storage Temperature Range – Tstg –65 to +150 °C NOTES: 1. Devices should not be operated at or outside these values. The "Recommended Operating Conditions" table provides for actual device operation. RECOMMENDED OPERATING CONDITIONS Rating Pin Symbol Value Unit Power Supply Voltage @ TA = 25°C 4, 9 VCC 0 (Ground) Vdc Input Frequency 1, 2 fin 500 MHz Ambient Temperature Range – TA –40 to +85 °C Input Signal Level 1, 2 Vin 200 mVrms DC ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC1 = VCC2 = 0, no input signal.) Characteristic Pin Symbol Min Typ Max Unit Total Drain Current (See Figure 2) 19, 22 ITotal mA VEE = –2.0 Vdc – 4.8 – VEE = –3.0 Vdc 3.0 5.0 8.0 VEE = –5.0 Vdc – 5.2 – VEE = –6.0 Vdc – 5.4 – Drain Current, I22 (See Figure 3) 22 I22 mA VEE = –2.0 Vdc – 3.0 – VEE = –3.0 Vdc – 3.1 – VEE = –5.0 Vdc – 3.3 – VEE = –6.0 Vdc – 3.4 – Drain Current, I19 (See Figure 3) 19 I19 mA VEE = –2.0 Vdc – 1.8 – VEE = –3.0 Vdc – 1.9 – VEE = –5.0 Vdc – 1.9 – VEE = –6.0 Vdc – 2.0 – DATA SLICER (Input Voltage Referenced to VEE = –3.0 Vdc, no input signal; See Figure 15.) Input Threshold Voltage (High Vin) 15 V15 1.0 1.1 1.2 Vdc Output Current (Low Vin) 17 I17 – 1.7 – mA Data Slicer Enabled (No Hold) V15 > 1.1 Vdc V18 = 0 Vdc AC ELECTRICAL CHARACTERISTICS (TA = 25°C, VEE = –3.0 Vdc, fRF = 130 MHz, fLO = 140.7 MHz, Figure 1 test circuit, unless otherwise specified.) Characteristic Pin Symbol Min Typ Max Unit 12 dB SINAD Sensitivity (See Figures 17, 23) 1, 14 – – –100 – dBm fin = 144.45 MHz; fmod = 1.0 kHz; fdev = ±75 kHz MIXER Conversion Gain 1, 3 – – 22 – dB Pin = –37 dBm (Figure 4) Mixer Input Impedance 1, 2 Rp – 1.0 – kΩ Single–Ended (Table 1) Cp – 4.0 – pF Mixer Output Impedance 3 – – 330 – Ω IF AMPLIFIER SECTION IF RSSI Slope (Figure 6) 20 – 0.2 0.4 0.6 µA/dB IF Gain (Figure 5) 5, 8 – – 39 – dB Input Impedance 5 – – 1.4 – kΩ Output Impedance 8 – – 290 – Ω www.lansdale.comPage 2 of 21 Issue A

Figure 1. Test Circuit NOTES: 1. TR 1 Coilcraft 1:4 impedance transformer.

1. 1.5 µH variable shielded inductor:

Toko Part # 292SNS–T1373 or Equivalent.

ML13156 LANSDALE Semiconductor, Inc. GENERAL The ML13156 is a low power single conversion wideband FM receiver incorporating a split IF . This device can be used as a single conversion receiver or as the backend in digital FM systems such as CT–2 and wide band data links with data rates up to 500 kbaud. It contains a mixer, oscillator, signal strength meter drive, IF amplifi- er, limiting IF , quadrature detector and a data slicer with a hold function (refer to Figure 8, Simplified Internal Circuit Schematic). CURRENT REGULATION Temperature compensating voltage independent current regula- tors are used throughout. MIXER The mixer is a double–balanced four quadrant multiplier and is designed to work up to 500 MHz. It can be used in differential or in single–ended mode by connecting the other input to the positive supply rail. Figure 4 shows the mixer gain and saturated output response as a function of input signal drive. The circuit used to measure this is shown in Figure 1. The linear gain of the mixer is approxi- mately 22 dB. Figure 9 shows the mixer gain versus the IF out- put frequency with the local oscillator of 150 MHz at 100 mVms LO drive level. The RF frequency is swept. The sensitivi- ty of the IF output of the mixer is shown in Figure 10 for an RF input drive of 10 mVrms at 140 MHz and IF at 10 MHz. The single–ended parallel equivalent input impedance of the mixer is Rp ~ 1.0 kΩand Cp ~ 4.0 pF (see Table 1 for details). The buffered output of the mixer is internally loaded resulting in an output impedance of 330 Ω. LOCAL OSCILLATOR The on–chip transistor operates with crystal and LC resonant elements up to 220 MHz. Series resonant, overtone crystals are used to achieve excellent local oscillator stability. 3rd overtone crystals are used through about 65 to 70 MHz. Operation from

70 MHz up to 180 MHz is feasible using the on–chip transistor

with a 5th or 7th overtone crystal. To enhance operation using an overtone crystal, the internal transistor’ s bias is increased by adding an external resistor from Pin 23 to VEE. –10 dBm of local oscillator drive is needed to adequately drive the mixer (Figure 10). The oscillator configurations specified above, and two others using an external transistor, are described in the application sec- tion: 1) A 133 MHz oscillator multiplier using a 3rd overtone crystal, and 2) A 307.8 to 309.3 MHz manually tuned, varactor controlled local oscillator. RSSI The Received Signal Strength Indicator (RSSI) output is a cur- rent proportional to the log of the received signal amplitude. The RSSI current output is derived by summing the currents for the IF and limiting amplifier stages. An external resistor at Pin 20 sets the voltage range or swing of the RSSI output voltage. Linearity of the RSSI is optimized by using external ceramic or crystal bandpass filters which have and insertion loss of 8.0 dB. The RSSI circuit is designed to provide 70+ dB of dynamic range with temperature compensation (see Figures 6 and 7 which show RSSI responses of the IF and Limiter amplifiers). Variation in the RSSI output current with supply voltage is 5 ma total delta (see Figure 11). CARRIER DETECT When the meter current flowing through the meter load resist- ance reaches 1.2 Vdc above ground, the comparator flips, caus- ing the carrier detect output to go high. Hysteresis can be accomplished by adding a very large resistor for positive feed- back between the output and the input of the comparator. IF AMPLIFIER The first IF amplifier section is composed of three differential stages with the second and third stages contributing to the RSSI. This section has internal dc feedback and external input decou- pling for improved symmetry and stability. The total gain of the IF amplifier block is approximately 39 dB at 10.7 MHz. Figure 5 shows the gain and saturated output response of the IF ampli- fier over temperature, while Figure 12 shows the IF amplifier gain as a function of the IF frequency. The fixed internal input impedance is 1.4k Ω. It is designed for application where a 455 kHz ceramic filter is used and no exter- nal output matching is necessary since the filter requires a 1.4 kΩsource and load impedance. For 10.7 Mhz ceramic filter applications, an external 430 Ω resistor must be added in parallel to provide the equivalent load impedance of 330 Ωthat is required by the filter; however, no external matching is necessary at the input since the mixer out- put matches the 330 Ωsource impedance of the filter. For 455 kHz applications, an external 1.1 k Ωresistor must be added in series with the mixer output to obtain the required matching impedance of 1.4 kΩof the filter input resistance. Overall RSSI linearity is dependent on having total midband attenuation of 12 dB (6.0 dB insertion loss plus 6.0 dB impedance matching loss) for the filter. The output of the IF amplifier is buffered and the impedance is 290 Ω. LIMITER The limiter section is similar to the IF amplifier section except that four stages are used with the last three contributing to the RSSI. The fixed internal input impedance is 1.4 k Ω. The total gain of the limiting amplifier sections is approximately 55 dB. This IF limiting amplifier section internally drives the quadra- ture detector section. CIRCUIT DESCRIPTION www.lansdale.comPage 6 of 21 Issue A

ML13156 LANSDALE Semiconductor, Inc. Figure 17. MC13156DW Application Circuit NOTES: 1. 0.1 µH Variable Shielded Inductor: Coilcraft part # M1283–A or equivalent.

1. 10.7 MHz Ceramic Filter: Toko part # SK107M5–A0–10X or Murata Erie part # SFE10.7MHY–A.
2. 1.5 µH Variable Shielded Inductor: Toko part # 292SNS–T1373.
3. 3rd Overtone, Series Resonant, 25 PPM Crystal at 44.585 MHz.
4. 0.814 µH Variable Shielded Inductor: Coilcraft part # 143–18J12S.
5. 0.146 µH Variable Inductor: Coilcraft part # 146–04J08.

133.755 MHz

4 VCC

LANSDALE Semiconductor, Inc. ML13156 Legacy Applications Information www.lansdale.comPage 11 of 21 Issue A

Table 1. Mixer Input Impedance Data rejection when the local oscillator is below the RF input frequency. Silver mica capacitors are used for their high Q and tight tolerance. MHz and fOSC = 133.75 MHz (see Figure 23). the series equivalent single–ended mixer input impedance. at the 3rd harmonic of the overtone crystal frequency.

LANSDALE Semiconductor, Inc. ML13156 Legacy Applications Information www.lansdale.comPage 13 of 21 Issue A

ML13156 LANSDALE Semiconductor, Inc. Figure 18. MC13156DW Application Circuit NOTES: 1. 0.1 µH Variable Shielded Inductor: Coilcraft part # M1283–A or equivalent.

1. Capacitors are Silver Mica.
2. 5th Overtone, Series Resonant, 25 PPM Crystal at 93.300 MHz.
3. 0.135 µH Variable Shielded Inductor: Coilcraft part # 146–05J08S or equivalent.

104 MHz

on the desired Butler mode of oscillation. this oscillator is tunable over a range of approximately 1.5 MHz. cations; it is a dual back–to–back varactor in a SOT–23 package. former (Recommended sources are Mini–Circuits and Coilcraft). used will vary with layout placement and component parasitics. Figure 24 shows the full RSSI response in the application circuit. to linearize the curve between the limiter and IF portions of RSSI. application circuit in Figure 17 with no RSSI output filter capacitor.

Figure 19. MC13156DW Application Circuit NOTES: 1. 0.08 µH Variable Shielded Inductor: Toko part # 292SNS–T1365Z or equivalent.

1. Capacitors are Silver Mica.
2. 7th Overtone, Series Resonant, 25 PPM Crystal at 148.300 MHz.
3. 76 nH Variable Shielded Inductor: Coilcraft part # 150≠03J08S or equivalent.

Figure 20. MC13156DW Varactor Controlled LC Oscillator NOTES: 1. 1:4 Impedance Transformer: Mini±Circuits.

1. 50 k Potentiometer, 10 turns.
2. Spring Coil; Coilcraft A05T.
3. Dual Varactor in SOT–23 Package.
4. All other components are surface mount components.
5. Ferrite beads through loop of 24 AWG wire.

320 MHz

159 MHz

ML13156 LANSDALE Semiconductor, Inc. Figure 21. MC13156DW Application Circuit at 45 MHz NOTES: 1. 0.33 µH Variable Shielded Inductor: Coilcraft part # 7M3–331 or equivalent.

1. 455 kHz Ceramic Filter: Murata Erie part # SFG455A3.
2. 455 kHz Quadrature Tank: Toko part # 7MC8128Z.
3. 3rd Overtone, Series Resonant, 25 PPM Crystal at 44.540 MHz.
4. 0.416 µH Variable Shielded Inductor: Coilcraft part # 143–10J12S.

45 MHZ NARROWBAND RECEIVER

tion a narrowband receiver with a 455 kHz IF will be described. 455 kHz quadrature tank from Toko. 80 db of linear range (see Figure 22). approximately –25 dBm (see Figure 27).

DESCRIPTION

The test setup shown in Figure 29 is configured so that the function generator supplies a 100 kHz clock source to the bit error rate tester. This device generates and receives a repeating data pattern and drives a 5 pole baseband data filter. The filter effectively reduces harmonic content of the base band data which is used to modulate the RF generator which is running at 144.45 MHz. Following processing of the signal by the receiver (ML13156), the recovered baseband sinewave (data) is AC coupled to the data slicer. The data slicer is essentially an auto–threshold comparator which tracks the zero crossing of the incoming sinewave and pro- vides logic level data at its output. Data errors associated with the recovered data are collected by the bit error rate receiver and dis- played. Bit error rate versus RF signal input level and IF filter bandwidth are shown in Figure 28. The bit error rate data was taken under the following test conditions:

• Data rate = 100kbps
• Filter cutoff frequency set to 39% of the data rate or 39 kHz.
• Filter type is a 5 pole equal–ripple with 0.5° phase error.
• VCC = 4.0 Vdc
• Frequency deviation = ±32 kHz. EV ALUATION PC BOARD The evaluation PCB is very versatile and is intended to be used across the entire useful frequency range of this device. The center section of the board provides an area for attaching all SMT compo- nents to the component ground side (see Figures 32 and 33). Additionally, the peripheral area surrounding the RF core provides pads to add supporting and interface circuitry as a particular appli- cation dictates ML13156 LANSDALE Semiconductor, Inc. BER TESTING AND PERORMANCE –90

Figure 28. Bit Error Rate versus RF

ML13156 LANSDALE Semiconductor, Inc. Figure 29. Bit Error Rate Test Setup

5 Pole

ML13156 LANSDALE Semiconductor, Inc. (ML13156-8P) PLASTIC QFP PACKAGE CASE 873–01 ISSUE A OUTLINE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS –A–, –B– AND –D– TO BE DETERMINED AT DATUM PLANE –H–. 5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE –C–. 6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE –H–. 7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. U BL DETAIL A L –A– V SA–BM0.20 (0.008) D SC SA–BM0.20 (0.008) D SH A–B0.05 (0.002) SA–BM0.20 (0.008) D SC A–B0.05 (0.002) SA–BM0.20 (0.008) D SH –D– A S –B– –C– SEATING PLANE –H– DATUM PLANE MG DETAIL CM H C E 0.01 (0.004) –H– DATUM PLANE T DETAIL C R K Q X DETAIL A B B P SA–BM0.20 (0.008) D SC J F N D SECTION B–B BASE METAL VIEW ROTATED 90 CLOCKWISE DIM MIN MAX MIN MAX INCHESMILLIMETERS A 6.95 0.274 0.280 B 6.95 7.10 0.274 0.280 C 1.40 1.60 0.055 0.063 D 0.273 0.373 0.010 0.015 E 1.30 1.50 0.051 0.059 G 0.80 BSC 0.031 BSC J 0.119 0.197 0.005 0.008 K 0.33 0.57 0.013 0.022 L 5.6 REF 0.220 REF M 6° 8 ° 6 ° 8 ° N 0.119 0.135 0.005 0.005 P 0.40 BSC 0.016 BSC Q 5° 10 ° 5 ° 10 ° R 0.15 0.25 0.006 0.010 S 8.85 9.15 0.348 0.360 T 0.15 0.25 0.006 0.010 U 5° 11 ° 5 ° 11 ° V 8.85 9.15 0.348 0.360 X 1.00 REF 0.039 REF 7.10 www.lansdale.comPage 20 of 21 Issue A

ML13156 LANSDALE Semiconductor, Inc. (ML13156-6P) PLASTIC PACKAGE CASE 751E–04 (SO–24L) ISSUE E OUTLINE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. –A– –B– P12X D24X 1324 M0.010 (0.25) B M SAM0.010 (0.25) B ST –T– G22X SEATING PLANE K C R X 45° M F J DIM MIN MAX MIN MAX INCHESMILLIMETERS A 15.25 15.54 0.601 0.612 B 7.40 7.60 0.292 0.299 C 2.35 2.65 0.093 0.104 D 0.35 0.49 0.014 0.019 F 0.41 0.90 0.016 0.035 G 1.27 BSC 0.050 BSC J 0.23 0.32 0.009 0.013 K 0.13 0.29 0.005 0.011 M 0° 8 ° 0 ° 8 ° P 10.05 10.55 0.395 0.415 R 0.25 0.75 0.010 0.029 Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliabili- ty, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc. www.lansdale.comPage 21 of 21 Issue A