ML13150 LANSDALE | Alldatasheet

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www.lansdale.com ML13150 Narrowband FM Coilless Detector IF Subsystem Page 1 of 20 Issue A Legacy Device: Motorola MC13150 The ML13150 is a narrowband FM IF subsystem targeted at cellular and other analog applications. The ML13150 has an onboard Colpitts VCO that can be crystal controlled or phased lock for second LO in dual conversion receivers. The mixer is a double balanced configuration with excellent third order inter- cept. It is useful to beyond 200 MHz. The IF amplifier is split to accommodate two low cost cascaded filters. RSSI output is derived by summing the output of both IF sections., The quadra- ture detector is a unique design eliminating the conventional tunable quadrature coil. cordless telephone, data links and other radio systems utilizing narrowband FM modulation. ML13150-A9P PLASTIC PACKAGE (LQFP-24) 24 1 ML13150-B9P PLASTIC PACKAGE (LQFP-32) CROSS REFERENCE/ORDERING INFORMATION MOTOROLA LQFP-24 MC13150FTA ML13150-A9P LQFP-32 MC13150FTB ML13150-B9P LANSDALEPACKAGE Note: Lansdale lead free ( Pb) product, as it becomes available, will be identified by a part number prefix change from ML to MLE. NARROWBAND FM COILLESS DETECTOR IF SUBSYSTEM FOR CELLULAR AND ANALOG APPLICATIONS SEMICONDUCTOR TECHNICAL DATA

  • Linear Coilless Detector
  • Adjustable Demodulator Bandwidth
  • 2.5 to 6.0 Vdc Operation
  • Low Drain Current <2.0 mA
  • T ypical Sensitivity of 2.0 µV for 12 dB SINAD
  • IIP3, Input Third Order Intercept Point of 0 dBm
  • RSSI Range of Greater Than 100 dB
  • Internal 1.4 kΩTerminations for 455 kHz Filters
  • Split IF for Improved filtering and Extended RSSI Range
  • Operating Temperature Range - TA = -40° to +85°C AFTFilt PIN CONNECTIONS Mixer Limiter Limiter Mixer IF IF RSSIb DETout VEE2 DETGain AFTout RSSIb DETout VEE (N/C) VEE2 DETGain VEE (N/C) AFTFilt AFTout MixOut VCC1 VCC (N/C) IFin IFd1 VCC (N/C) IFd2 IFout Mixout VCC1 IFin IFd1 IFd2 IFout 789 1 0 1 1 1 2 24 23 22 21 20 19 VCC2 LIM in LIMd1 LIMd2 BWAdj FAdj Mix in VEE1 LOe LOb Enable RSSI Mixin VEE1 LOe LOb Enable RSSI VCC (N/C) VCC (N/C) VCC2 LIMin LIMd1 LIMd2 BWAdj FAdj VCC (N/C) VCC (N/C) Detector Detector 91 0 1 3 1 4 15 1611 12 32 31 28 27 26 2530 29 LQFP-24 LQFP-32

ML13150 LANSDALE Semiconductor, Inc. MAXIMUM RATINGS Rating Pin Symbol Value Unit Power Supply Voltage 2, 9 VCC(max) 6.5 Vdc Junction Temperature - TJmax +150 C Storage Temperature Range - Tstg -65 to +150 C NOTE: 1. Devices should not be operated at or outside these values. The “Recommended Operating Limits” provide for actual device operation. 2. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Rating Pin Symbol Value Unit Power Supply Voltage T A = 25 C –40 C T A 85 C (See Figure 22) 2, 9 21, 31 VCC VEE 2.5 to 6.0 Vdc Input Frequency 32 fin 10 to 500 MHz Ambient Temperature Range - TA -40 to +85 C Input Signal Level 32 Vin 0 dBm DC ELECTRICAL CHARACTERISTICS (TA = 25 C, VCC1 = VCC2 = 3.0 Vdc, No Input Signal.) Characteristics Condition Pin Symbol Min Ty p Max Unit Total Drain Current (See Figure 2) VS = 3.0 Vdc 2 + 9 ITOTAL - 1.7 3.0 mA Supply Current, Power Down (See Figure 3) AC ELECTRICAL CHARACTERISTICS (TA = 25 C, VS = 3.0 Vdc, fRF = 50 MHz, fLO = 50.455 MHz, LO Level = –10 dBm, see Figure 1 Test Circuit*, unless otherwise specified.) Characteristics Condition Pin Symbol Min Ty p Max Unit 12 dB SINAD Sensitivity (See Figure 15) fmod = 1.0 kHz; fdev = ±5.0 kHz 32 - - –100 - dBm RSSI Dynamic Range (See Figure 7) - 25 - - 100 - dB Input 1.0 dB Compression Point Input 3rd Order Intercept Point (See Figure 18) 1.0 dB C. Pt. IIP3 -1 1 -1.0 dBm Coilless Detector Bandwidth Adjust (See Figure 11) Measured with No IF Filters - ∆BW adj - 26 - kHz/µA MIXER Conversion Voltage Gain (See Figure 5) Pin = -30 dBm; PLO = -10 dBm 32 - - 10 - dB Mixer Input Impedance Single-Ended 32 - - 200 - Ω Mixer Output Impedance - 1 - - 1.5 - kΩ LOCAL OSCILLATOR LO Emitter Current (See Figure 26) - 29 - 30 63 100 µA IF & LIMITING AMPLIFIERS SECTION IF and Limiter RSSI Slope Figure 7 25 - - 0.4 - µA/dB IF Gain Figure 8 4, 8 - - 42 - dB IF Input & Output Impedance - 4, 8 - - 1.5 - kΩ Limiter Input Impedance - 10 - - 1.5 - kΩ Limiter Gain - - - - 96 - dB * Figure 1 Test Circuit uses positive (VCC) Ground. www.lansdale.comPage 2 of 20 Issue A

  • Figure 1 Test Circuit uses positive (VCC) Ground.

Figure 1. Test Circuit This device contains 292 active transistors.

ML13150 LANSDALE Semiconductor, Inc. GENERAL DESCRIPTION The ML13150 is a very low power single conversion nar- rowband FM receiver incorporating a split IF . This device can be used as a single conversion or as the backend in analog narrowband FM systems such as 900 MHz cord- less phones, and narrowband data links with data rates up to 9.6 k baud. It contains a mixer, oscillator, extended range received signal strength indicator (RSSI), RSSI buffer, IF amplifier, limiting IF , a unique coilless quadra- ture detector and a device enabler function (see Package Pin Outs/Block Diagram). LOW CURRENT OPERATION The ML13150 is designed for battery and portable applications. Supply current is typically 1.7 mAdc at 3.0 Vdc. Figure 2 shows the supply current versus supply voltage. ENABLE The enable function is provided for battery powered operation. The enabled pin is pulled down to enable the regulators. Figure 3 shows the supply current versus enable voltage, Venable (relative to VCC) needed to enable the device. Note that the device is fully enabled at VCC - 1.3 Vdc. Figure 4 shows the relationship of the enable current, Ienable, to enable voltage, Venable. MIXER The mixer is a double-balanced four quadrant multiplier and is designed to work up to 500 MHz. It has a single ended input. Figure 5 shows the mixer gain and saturated output response as a function of input signal drive and for –10 dBm LO drive level. This is measured in the applica- tion circuit shown in Figure 15 in which a single LC matching network is used. Since the single–ended input impedance of the mixer is 200 Ω, and alternate solution uses a 1:4 impedance transformer to match the mixer to 50 Ωinput impedance. The linear voltage gain of the mixer alone is approximately 4.0 dB (plus an additional 6.0 dB for the transformer). Figure 6 shows the mixer gain versus the LO input level for various mixer input levels at 50 MHz RF input. The buffered output of the mixer is internally loaded, resulting in an output impedance of 1.5k Ω. LOCAL OSCILLATOR The on–chip transistor operates with crystal and LC resonant elements up to 220 MHz. Series resonant, overtone crystals are used to achieve excellent local oscillator stability. 3rd overtone crystals are used through about 65 to 70 MHz. Operation for 70 MHz up to 200 MHz is feasible using the on–chip transistor with a 5th or 7th overtone crystal. To enhance operation using an overtone crystal, the internal transistor's bias is increased by adding an external resistor from Pin 29 (in 32 pin QFP package) to VEE to keep the oscillator on continuously or it may be taken to the enable pin to shut is off when the receiver is disabled. –10 dBm of local oscillator drive is needed to adequately drive the mixer (Figure 6). The oscillator configurations specified above are described in the application section. RSSI The received signal strength indicator (RSSI) output is a current proportional to the log of the received signal amplitude. The RSSI current output is derived by summing the currents from the IF and limiting amplifier stages. An external resistor at Pin 25 (in 32 pin QFP package) sets the voltage range or swing of the RSSI output voltage. Linearity of the RSSI is optimized by using external ceramic bandpass filters which have an insertions loss of 4.0 dB. The RSSI circuit is designed to provide 100+ dB of dynamic range with temperature compensation (see Figures 7 and 23 which show the RSSI response of the applications circuit). RSSI BUFFER The RSSI buffer has limitations in what loads it can drive. It can pull loads well towards the positive and negative supplies, but has problems pulling the load away from the supplies. The load should be biased at half supply to overcome this situation. ML13150 CIRCUIT DESCRIPTION www.lansdale.comPage 4 of 20 Issue A

ML13150 LANSDALE Semiconductor, Inc. Figure 14. S+N+D, N+D, N, 30% AMR used across the entire useful frequency range of this device. and referenced in this section. 83.616 MHz crystal oscillator circuit in Figure 16. excellent choices to easily interface with the MC13150 mixer. the 3.0 dB bandwidth is 30 kHz.

Figure 15. Application Circuit NOTES: 1. Alternate solution is 1:4 impedance transformer (sources include Mini Circuits, Coilcraft and Toko).

  1. 455 kHz ceramic filters (source Murata CFU455 series which are selected for various bandwidths).
  2. For external LO source, a 51 Ω pullup resistor is used to bias the base of the on–board transistor as shown in Figure 15.

accommodate external components needed for a Butler emitter coupled crystal oscillator (see Figure 16).

  1. Enable IC by switching the pin to VEE.
  2. The resistor is chosen to set the range of RSSI voltage output swing.
  3. Details regarding the external components to setup the coilless detector are provided in the application section.

ML13150 LANSDALE Semiconductor, Inc. Figure 16. ML13150 Overtone Oscillator may be impacted by lower gain margins. resistance associated with this undesired mode of oscillation. tor prevent oscillation at these frequencies.

ML13150 LANSDALE Semiconductor, Inc. Figure 27. Component Placement View – Circuit Side

50 Semi±Rigid CoaxΩ

ML13150 LANSDALE Semiconductor, Inc. Figure 28. Component Placement View – Ground Side

83.616 MHz

ML13150 LANSDALE Semiconductor, Inc. Figure 29. PCB Circuit Side View

ML13150 LANSDALE Semiconductor, Inc. Figure 30. PCB Ground Side View

ML13150 LANSDALE Semiconductor, Inc. ML13150-A9P PLASTIC PACKAGE CASE 977–01 (LQFP–24) ISSUE O OUTLINE DIMENSIONS DIM MIN MAX MIN MAX INCHESMILLIMETERS A 4.000 BSC 0.157 BSC A1 2.000 BSC 0.079 BSC B 4.000 BSC 0.157 BSC B1 2.000 BSC 0.079 BSC C 1.400 1.600 0.055 0.063 D 0.170 0.270 0.007 0.011 E 1.350 1.450 0.053 0.057 F 0.170 0.230 0.007 0.009 G 0.500 BSC 0.020 BSC H 0.050 0.150 0.002 0.006 J 0.090 0.200 0.004 0.008 K 0.500 0.700 0.020 0.028 M 12 REF 12 REF N 0.090 0.160 0.004 0.006 P 0.250 BSC 0.010 BSC Q 1° 5° 1° 5° R 0.150 0.250 0.006 0.010 S 6.000 BSC 0.236 BSC S1 3.000 BSC 0.118 BSC V 6.000 BSC 0.236 BSC V1 3.000 BSC 0.118 BSC W 0.200 REF 0.008 REF X 1.000 REF 0.039 REF NOTES:

1 DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982. 2 CONTROLLING DIMENSION: MILLIMETER.

3 DATUM PLANE –AB– IS LOCATED AT BOTTOM OF

LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE.

4 DATUMS –T–, –U–, AND –Z– TO BE DETERMINED

AT DATUM PLANE –AB–.

5 DIMENSIONS S AND V TO BE DETERMINED AT

DATUM PLANE –AC–.

6 DIMENSIONS A AND B DO NOT INCLUDE MOLD

PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 (0.010) PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE AB.

7 DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE D DIMENSION TO EXCEED 0.350 (0.014).

8 MINIMUM SOLDER PLATE THICKNESS SHALL BE

0.0076 (0.0003). 9 EXACT SHAPE OF EACH CORNER IS OPTIONAL. DETAIL AD DETAIL Y S A –U– T–U0.200 (0.008) ZAB B –T– V –Z– T–U0.200 (0.008) ZAB –AC– –AB– 0.080 (0.003) AC R DETAIL AD DETAIL Y AE AE K X W G TOP & BOTTOM SECTION AEAE M Q CE H 0.250 (0.010) GAUGE PLANE F D NJ P ST–US0.080 (0.003) Z SAC www.lansdale.comPage 18 of 20 Issue A

ML13150 LANSDALE Semiconductor, Inc. ML13150-B9P PLASTIC PACKAGE CASE 873–01 (LQFP–32) ISSUE A OUTLINE DIMENSIONS 0.274 0.274 0.055 0.010 0.051 0.010 0.005 0.013 0.005 0.006 0.348 0.006 0.348 MIN MIN MAX MAX MILLIMETERS INCHES DIM 7.10 7.10 1.60 0.373 1.50 0.20 0.197 0.57 0.135 10° 0.25 9.15 0.25 11° 9.15 6.95 6.95 1.40 0.273 1.30 0.273 0.119 0.33 0.119 0.15 8.85 0.15 8.85

0.031 BSC

0.220 REF

0.016 BSC

0.80 BSC

5.6 REF

0.40 BSC

A B C D E F G H J K L M N P Q R S T U V X 0.280 0.280 0.063 0.015 0.059 0.008 0.008 0.022 0.005 10° 0.010 0.360 0.010 11° 0.360 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS -A-, -B- AND -D- TO BE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE -C-. 6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. -H- DATUM PLANE X K DETAIL C U T R Q P DETAIL A -A-,-B-,-D- B B J BASE METAL D N SECTION B-B VIEW ROTATED 905 CLOCKWISE F -H- DATUM PLANE H 24 17 VB -B- L -A- L -D- A S DETAIL A -C- SEATING PLANE C E DETAIL CM MG 1.0 REF 0.039 REF C0.20 (0.008) A–B D S SM 0.01 (0.004) H0.20 (0.008) A–B D S SM A–B0.05 (0.002) S SM 0.20 (0.008) C A–B D 0.05 (0.002) A–B M S S 0.20 (0.008) H A–B DM S S www.lansdale.comPage 19 of 20 Issue A

Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliabili- ty, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc. ML13150 LANSDALE Semiconductor, Inc. www.lansdale.comPage 20 of 20 Issue A