MMBV109LT1 LRC | Alldatasheet
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Technical content
LESHAN RADIO COMPANY, LTD. MBV109. MMBV109*. MV209*–1/2 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods.
- High Q with Guaranteed Minimum Values at VHF Frequencies
- Controlled and Uniform Tuning Ratio
- Available in Surface Mount Package Silicon Epicap Diode CATHODE ANODE MAXIMUM RATINGS Rating Symbol Value Unit MBV109T1 MMBV109LT1 MV209 Reverse Voltage V R 30 Vdc Forward Current I F 200 mAdc Device Dissipation P D @T A = 25°C 280 200 200 mW Derate above 25°C 2.8 2.0 1.6 mW/°C Junction Temperature T J +125 °C Storage Temperature Range T stg –55 to +150 °C DEVICE MARKING MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V (BR)R 30 — — Vdc ( I R = 10 µ Adc) Reverse Voltage Leakage Current I R — — 0.1 mAdc ( V R = 25Vdc) Diode Capacitance Temperature Coefficient TC C — 300 — ppm/°C(V R = 3.0 Vdc, f = 1.0 MHz) Device Type Min Nom Max Min Min Max MBV109T1, MMBV109LT1, MV209 26 29 32 200 5.0 6.5 1. C R is the ratio of C t measured at 3 V dc divided by C t measured at 25 Vdc. MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk. C T Diode Capacitance VR =3.0Vdc, f =1.0MHz p F Q, Figure of Merit V R = 3.0Vdc f = 50MHz CR, Capacitance Ratio C3 / C 25 f=1.0MHz (Note 1) MMBV109LT1 MBV109T1 MV209 CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) 26–32 pF VOLTAGE VARIABLE CAPACITANCE DIODES