MBNP01Q40Q8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 11

Technical content

Features

  • Two PNP and two NMOS chips are assembled in a standard SOP-8 package
  • Mounting area could be greatly reduced.
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MBNP01Q40Q8 G：Gate S：Source D：Drain B : Base C : Collector E : Emitter SOP-8

Ordering Information

(Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 2/11 MBNP01Q40Q8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) NMOS Parameter Symbol Limits Unit Drain-Source V oltage VDS 400 Gate-Source V oltage VGS ±12 V Continuous Drain Current @ TA=25°C, VGS=10V (Note 2) 0.36 Continuous Drain Current @ TA=70°C, VGS=10V (Note 2) ID 0.29 Pulsed Drain Current (Note 1) IDM 5.2 A Maximum Power Dissipation @ TA=25℃ (Note 2) 1.6 W Linear Derating Factor PD 0.01 W/°C Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C PNP Parameter Symbol Limits Unit Collector-Base V oltage VCBO -400 Collector-Emitter V oltage VCEO -400 Emitter-Base V oltage VEBO -5 V Collector Current IC -300 mA Total Power Dissipation 1.5 W Linear Derating Factor PD 0.01 W/°C Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Value Parameter Symbol NMOS PNP Unit Thermal Resistance, Junction-to-case, max Rth,j-c 6 Thermal Resistance, Junction-to-ambient, max Rth,j-a 70 (Note 2) 83 (Note 2) °C/W Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 3/11 MBNP01Q40Q8 CYStek Product Specification Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 400 - - VGS=0V , ID=250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA - - ±100 nA VGS=±3V , VDS=0V IGSS - - ±10 μA VGS=±12V , VDS=0V - - 100 nA VDS=320V , VGS=0V IDSS - - 10 μA VDS=320V , VGS=0V , Tj=125°C *GFS - 300 - mS VDS=10V , ID=30mA Dynamic Ciss - 173 - Coss - 20 - Crss - 19 - pF VDS=30V , VGS=0V , f=1MHz *td(ON) - 3.4 - *tr - 5.8 - *td(OFF) - 10.6 - *tf - 23.4 - ns VDS=200V , ID=1A, VGS=10V , RG=6Ω *Qg - 7.5 - *Qgs - 0.7 - *Qgd - 3.2 - nC VDS=320V , ID=100mA, VGS=10V Body Diode *IS - - 0.36 *ISM - - 5.2 A *VSD - 0.72 1 V VGS=0V , IS=100mA *trr - 96 - ns *Qrr - 67 - nC IF=0.5A, VGS=0V , dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 4/11 MBNP01Q40Q8 CYStek Product Specification Symbol Min. Typ. Max. Unit Test Conditions BVCBO -400 - - V IC=-50μA BVCEO -400 - - V IC=-1mA BVEBO -5 - - V IE=-50μA ICBO - - -100 nA VCB=-400V ICES - - -100 nA VCE=-300V , REB=0Ω IEBO - - -100 nA VEB=-5V *VCE(sat) - -0.17 -0.35 V IC=-20mA, IB=-1mA *VCE(sat) - -0.18 -0.35 V IC=-50mA, IB=-5mA *VCE(sat) - -0.18 -0.35 V IC=-100mA, IB=-20mA *VBE(sat) - -0.73 -1 V IC=-20mA, IB=-2mA *hFE 80 - 300 - VCE=-10V , IC=-10mA *hFE 30 - - - VCE=-10V , IC=-100mA fT - 100 - MHz VCE=-10V , IC=-10mA, f=5MHz Cob - 4.6 - pF VCB=-10V , IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 5/11 MBNP01Q40Q8 CYStek Product Specification Typical Characteristics : NMOS Typical Output Characteristics 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V, 9V, 8V,7V,6V,5V,4V,3.5V VGS=3V VGS=2.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.01 0.1 1 10 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(Ω) VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 0.2 0.4 0.6 0.8 1 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(Ω) VGS=10V, ID=100mAID=100mA RDS( ON)@Tj=25°C : 4.2 Ω typ

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 6/11 MBNP01Q40Q8 CYStek Product Specification Typical Characteristics(Cont.) : NMOS Capacitance vs Drain-to-Source Voltage 100 1000 0 1 02 03 04 05 06 07 08 09 0 1 0 0 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss NormalizedThreshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0246 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) ID=100mA VDS=320V VDS=80V VDS=200V Maximum Drain Current vs Junction Temperature 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJA=70°C/W Typical Transfer Characteristics 0.3 0.6 0.9 1.2 1.5 012345 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 7/11 MBNP01Q40Q8 CYStek Product Specification Typical Characteristics : PNP Emitter Grounded Output Characteristics 0.02 0.04 0.06 0.08 0.1 0.12 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 1mA 1.5mA 2.5mA 5mA -IB=500uA Emitter Grounded Output Characteristics 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0123456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 4mA 6mA 10mA 20mA -IB=2mA Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) HFE, Current Gain Tj=125°C 75°C 25°C 0°C -40°C -VCE=5V Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) HFE, Current Gain Tj=125°C 75°C 25°C 0°C -40°C -VCE=10V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) -VCESAT, Saturation Voltage(mV) VCESAT@IC=10IB -40°C 0°C 25°C 75°C 125°C Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 -IC, Collector Current(mA) -VCESAT, Saturation Voltage(mV) -40°C 0°C 25°C 75°C 125°C VCESAT@IC=20IB

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 8/11 MBNP01Q40Q8 CYStek Product Specification Typical Characteristics(Cont.) : FET 2 Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 -IC, Collector Current(mA) -VBESAT,Saturation Voltage(mV) VBESAT@IC=10IB -40°C 0°C 25°C 75°C 125°C On Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 -IC, Collector Current(mA) -VBEON, On Voltage(mV) VBEON@VCE=-10V -40°C 0°C 25°C 75°C 125°C Capacitance vs Reverse-biased Voltage 100 0.1 1 10 100 -VR, Reverse-biased Voltage(V) Capacitance(pF) Cib Cob Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 9/11 MBNP01Q40Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 10/11 MBNP01Q40Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 11/11 Spec. No. : C068Q8 MBNP01Q40Q8 CYStek Product Specification SOP-8 Dimension *: Typical H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Top View A B Front View F C D E G I Part A H J K O M L N Right side View Part A Date Code MBNP01 Q40 Device Name