MB05F HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o 0.8A
- VRRM 50V-1000V
- High surge current capability
Applications
Polarity: Color band denotes cathode Glass passivated chip ● MBXXF H igh Diode Semiconductor MBF Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications MBF MB05F THRU MB10F Item Symbol Unit Conditions MB 05F 1F 2F 4F 6F 8F 10F Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Rectified Output Current I O A Ta=25℃ 60Hz sine wave, R-load, Ta=25℃ On alumina substrate 0.8 On glass-epoxi substrate 0.5 Surge(Non- repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T j =25℃ Current Squared Time I t A S 1ms≤t<8.3ms Tj=25℃，Rating of per diode 3.7 Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150
Electrical Characteristics
a =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =0.4A, Pulse measurement, Rating of per diode 1.0 Peak Reverse Current I RRM μA V RM RRM , Pulse measurement, Rating of per diode Thermal Resistance R θ J-A ℃/W Between junction and ambient, On alumina substrate Between junction and ambient, On glass-epoxi substrate 134 R θ J-L Between junction and lead 20 V 35 70 140 280 420 560 700 Maximum RMS V RMS Voltage HD BF46
H igh Diode Semiconductor 0.2 Io(A) Ta( FIG1:Io-Ta Curve 160 sine wave R-load with heatsink 40 80 120 0.4 0.6 0.8 1.0 1.2 soldering land 1mm×1mm 1mm×1mm conductor layer 35um 20um substrate thickness 0.64mm on glass-epoxi substrate on alumina substrate IFSM(A) 2 5 10 20 50 100 sine wave non-repetitive Tj=25 FIG2:Surge Forward Current Capadility Number of Cycles 8.3ms 1cycle IFSM 8.3ms 0.01 0.02 0.05 VF(V) IF(A) FIG3: Forward Voltage 0.1 0.5 Ta=25 02 0 4 0 6 08 0 1 0 0 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=150 Tj=25 FIG4:Typical Reverse Characteristics
H igh Diode Semiconductor MBF MBF Dimensions in inches and (millimeters) 2.4 1.2 1.0 6.1
Reel Taping Specifications For Surface Mount Devices-MBF H igh Diode Semiconductor