MAC223 NJSEMI | Alldatasheet
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^Ettii-donauctoi ^Pioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 /2121 227-6005 Triacs MAC223 series GENERAL DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL "DRM 'l(RMS) !TSM PARAMETER MAC223 Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX 400 230 MAX. 600 230 UNIT V A A PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN tab
DESCRIPTION
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM 'T(RMS) ITSM ft dlT/dt 'GM VGM PGM 0(AV) Tstg Tj PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS MAC223 full sine wave; Tmb < 91 °C full sine wave; T, = 25 "C prior to surge t = 20 ms t= 16.7ms t= 10ms ITM = 30 A; IG = 0.2 A; dlG/dt = 0.2 A/us T2+G+ T2+G- T2-G- T2-G+ over any 20 ms period MIN. -40 MAX. 4001 6001 190 230 180 150 125 UNIT V A A A A2s A/us A/us A/us A/us A V W W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished b> N.I Semi-Contluctors is believed to be both accurate and reliable at the time of going to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
"^th i-mb R|h j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS full cycle half cycle in free air MIN. TYP. MAX. 1.0 1.4 UNIT K/W K/W K/W STATIC CHARACTERISTICS I, = 25 °C unless otherwise stated SYMBOL IGT IL IH VT VGT ID PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD= 12V; IT = 0.1 A T2+G+ T2+G- T2-G- T2-G+ VD=12V;IGT = 0.1 A T2+G+ T2+G- T2-G- T2-G+ VD=12V; IGT = 0.1 A T2+ T2- IT = 30 A VD=12V;IT = 0.1 A VD = 400V; IT = 0.1 A;T,= 125'C V^VOTM^V^S-C MIN. 0.25 TYP. 1.3 0.7 0.4 0.1 MAX. 1.55 1.5 0.5 UNIT mA rnA mA mA mA mA mA mA mA mA V V V mA DYNAMIC CHARACTERISTICS T = 25 °C unless otherwise stated SYMBOL dVD/dt dVcom/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS VDM = 67%VDRM(max);Tj=125'C; exponential waveform; gate open circuit VDM = 400 V; TJ = 95 C; ITJRMSJ = 25 A; dlcom/dt = 9 A/ms; gate open circuit ITM = 30 A; VD = VDRM(lrlax); IG = 0.1 A; MIN. 100 TYP. 300 MAX. UNIT V/(j.s V/|is