MAC223FP NJSEMI | Alldatasheet
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, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MAC223FP MAC223AFP Series ISOLATED TRIACs THYRISTORS
25 AMPERES RMS
-OMT1 MAXIMUM RATINGS (Tj = 25° unless otherwise noted.) Rating Peak Repetitive Off-State VoltageO) (Tj = -40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC223-4FR MAC223A4FP MAC223-6FP, MAC223A6FP MAC223-8FP, MAC223A8FP MAC223-10FP, MAC223A10FP On-State RMS Current (Tc = +80°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current) Circuit Fusing {t = 8.3 ms) Peak Gate" Power (t =s 2 jis) Average Gate Power (Tc = +80°C, t ^ 8.3 ms) Peak Gate Current (t =s 2 (is) Peak Gate Voltage (t £ 2 (as) RMS Isolation Voltage OX = 25aC, Relative Humidity e 20%) Operating Junction Temperature Storage Temperature Range Mounting Torque Symbol VDRM 'T(RMS) 'TSM |2t PGM PG(AV) IGM VGM V(ISO) Tj Tstg Value 200 400 600 800 250 260 0.5 ±10 1500 -40 to +125 -40 to +150 Unit Volts Amps Amps A2$ Watts Walt Amps Volts Volts cc in. ID. 1 - VDRM for al! types can be applied on a continuous basis. Blocking voltages snail nol be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point forall TC measurements is a point on the center lead of the package as close as possible to the plastic body. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient - Symbol RGJC Recs R6JA Max 1.2 2.2 Unit °C/W °c/w °c/w Quality Semi-Conductors
MAC223FP Series MAC223AFP Series ELECTRICAL CHARACTERISTICS (Tc = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Peak Blocking CurrentO) Tj = 25°C (VD = Rated VDRM- Gate Open) Tj = 125°C Peak On-State Voltage (IjM = 35 A Peak, Pulse Width ss 2 ms, Duty Cycle s 2%) Gate Trigger Current (Continuous dc) {VD = 12V, RL=100U) MT2(-), G(+) "A" SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (VD= 12V, RL= 10012) MT2{-), G{+) "A" SUFFIX ONLY (VD = Rated VDRM, Tj = 125°C, RL = 10 k) MT2(-), G(+) "A" SUFFIX ONLY Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time {VD - Rated VDRM> ]TM = 35 A Peak, IG = 200 mA) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM. Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM. ]TM - 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) Symbol IDRM VTM IGT VGT IH <gt dv/dt dv/dt(c) Min 0.2 0.2 Typ 1.4 1.1 1.3 0.4 0.4 1.5 Max 1.85 2.5 Unit HA mA Volts mA Volts mA MS V/LIS V/LIS 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. MILLIMETERS 254BSC