MAC15 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

  • Blocking Voltage to 800 V
  • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
  • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
  • Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes (MAC15A Series)
  • These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS (Tj = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage Note 1 (Tj = -40 to +1 25°C, Sine Wave 50 to 60 Hz, Gate Open) MAC15A6G MAC15-8G, MAC15A8G MAC15-10G, MAC15A10G Peak Gate Voltage (Pulse Width < 1 ,0 usec; Tc = 90°C) On-State Current RMS; Full Cycle Sine Wave 50 to 60 Hz (Tc = +90°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, Tc = +80°C) Preceded and Followed by Rated Current Peak Gate Power (Tc = +80°C, Pulse Width = 1.0 us) Average Gate Power (Tc = +80°C, t = 8.3 ms) Peak Gate Current (Pulse Width < 1 .0 (isec; Tc = 90°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM VGM !T(RMS) I2t ITSM PGM PG(AV) IGM Tj Tstg Value 400 600 800 150 0.5 2.0 -40 to +125 -40 to +150 Unit V V A A2s A W W A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 TRIACS

15 AMPERES RMS

MAC15xx = Specific Device Code xx = See Table on Page 2 A = Assembly Location (Optional)* Y = Year WW = Work Week NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to press. However, NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds Symbol Rejc RHJA TL Value 2.0 62.5 260 Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Blocking Current Tj = 25°C (VD = Rated VDRM, VRRM; Gate Open) Tj = 1 25°C IDRM, IRRM 2.0 HA mA ON CHARACTERISTICS Peak On-State Voltage Note 2 (|JM = ±21 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, R|_ = 100 Q) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Q) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY Gate Non-Trigger Voltage (VD = 1 2 V, RL = 1 00 Q) Tj = 1 1 0°C) MT2(-), G(+) "A" SUFFIX ONLY Holding Current (Vp = 12 Vdc, Gate Open, Initiating Current = ±200 mA) Turn-On Time (VD = Rated VDRM, ITM = 17 A) (IGT = 120 mA, Rise Time = 0.1 (is, Pulse Width = 2 \\i&) VTM IGT VGT VGD IH 'gt 0.2 0.2 1.3 0.9 0.9 1.1 1.4 6.0 1.5 1.6 2.5 V mA V V mA (IS DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80°C) dv/dt(c) 5.0 V/^s 2. Pulse Test: Pulse Width < 2.0 ms, Duty Cycle < 2%.