MA704A

MA6X718 PANASONIC | Alldatasheet

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Schottky Barrier Diodes (SBD) MA6X718 Silicon epitaxial planar type For switching circuits For wave detection circuit I Features

• Three MA3X704As in the same direction are contained in one package
• Optimum for low-voltage rectification because of its low forward rise voltage (VF)
• Optimum for high-frequency rectification because of its short re- verse recovery time (trr) I Absolute Maximum Ratings Ta = 25°C Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) V R 30 V Peak forward current* IFM 150 mA Forward current (DC)* IF 30 mA Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C 4 : Anode 3 5 : Anode 2 6 : Anode 1 Mini Type Package (6-pin) Internal Connection Marking Symbol: M2N Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 30 V 1 µA Forward voltage (DC) V F1 IF = 1 mA 0.4 V VF2 IF = 30 mA 1.0 V Terminal capacitance C t VR = 1 V, f = 1 MHz 1.5 pF Reverse recovery time* trr IF = IR = 10 mA 1.0 ns Irr = 1 mA, RL = 100 Ω Detection efficiency η Vin = 3 V(peak), f = 30 MHz 65 % RL = 3.9 kΩ, CL = 10 pF I Electrical Characteristics Ta = 25°C Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the char ge of a human body and the leakage of current from the operating equipment ɹ 2. Rated input/output frequency: 2 000 MHz 3. * : t rr measuring instrument 1 : Cathode 1 2 : Cathode 2 3 : Cathode 3 2.8 + 0.2 − 0.3 1.5 + 0.25 4 3 1.45 ± 0.1 0.95 0.95 1.9 ± 0.1 0.3 + 0.1 − 0.05 0.5 + 0.1 − 0.05 2.9 + 0.2 − 0.05 1.1 + 0.2 − 0.1 0.8 0.4 ± 0.2 0 to 0.05 0.16 + 0.1 − 0.06 0.1 to 0.3 Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 10 mA IR = 10 mA RL = 100 Ω 10% Input Pulse Output Pulse Irr = 1 mA tr tp trr VR IF t t A Note) * : Value in per diode

Schottky Barrier Diodes (SBD) MA6X718 IF  VF IR  VRVF  Ta Ct  VR IR  Ta 10−2 10−1 102 103 Forward voltage VF (V) Forward current IF (mA) Ta = 125°C − 20°C 75°C 25°C 0.2 0.4 0.6 0.8 1.0 −40 0 40 80 120 160 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 30 mA 10 mA 1 mA 10−2 0 5 10 15 20 25 30 10−1 102 103 Ambient temperature VR (V) Reverse current IR (µA) Ta = 125°C 75°C 25°C 2.4 2.0 1.6 1.2 0.8 0.4 0 5 10 15 20 25 30 Reverse voltage VR (V) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 10−2 −40 0 40 80 120 160 200 10−1 102 103 Ambient temperature Ta (°C) Reverse current IR (µA) VR = 30 V 3 V 1 V