MA650 PANASONIC | Alldatasheet
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V RRM = 200V, TC = 25˚C V RRM = 200V, Tj=150˚C IF= 5A, TC = 25˚C IF=1A, IR =1A Flat direct current between junction and case Symbol IRRM1 IRRM2 V F trr* R th(j-c) R th(j-a) Note 1. Rated input/output frequency : 10MHz 2. * trr measuring circuit n Electrical Characteristics (Ta= 25˚C) Unit µA mA V ns ˚C/W ˚C/W MA650 Silicon planer type (cathode common) For switching n Features l High reverse voltage VR l Low forward voltage VF l Fast reverse recovery time trr n Absolute Maximum Ratings (Ta= 25˚C) Unit : mm 1 : Anode 2 : Cathode (common) 3 : Anode TO-220F(a) (TO-220 Full-Pack Package) n Internal Connection Unit V V A A Rating 200 200 – 40 to +150 – 40 to +150 Symbol V RRM V RSM IF(A V) IFSM * Tj Tstg * Sine half wave : 10ms/cycle Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature Fast Recovery Diodes (FRD) MA111 Parameter Repetitive peak reverse current Forward voltage (DC) Reverse recovery time Thermal resistance min typ max 100 100 50Ω 50Ω 5.5Ω D.U.T trr 0.1 × IR IF IR 123 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 -0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 ø3.1–0.1
IF(AV) – TC PD(A V) – IF(AV)IR – VRIF – VF R th(t) – t Fast Recovery Diodes (FRD) MA650 0.01 0.1
100 TC =25˚C
Ta=150˚C 100˚C 25˚C Forward voltage VF (V) Forward current IF (A) 102 0 50 100 150 200 250 300 108 107 106 105 104 103 Ta=150˚C 100˚C 25˚C Reverse voltage VR (V) Reverse current IR (nA) Average forward current IF(AV) (A) Average forward current PD(AV) (W ) 02468 1 0 1 2 t0/t1=1/6 DC Case temperature TC (˚C) Average forward current IF(AV) (A) 30 50 100 150 t0/t1=1/2 DC Time t (s) Thermal resistance Rth (˚C/W) 10–2 10–1 102 10–4 10–3 10–2 10–1 11 0 1 0 2 103 104 Without heat sink