MA3Z070 PANASONIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Unit : mm Internal Connection Marking Symbol: M3S MA3Z070 Silicon epitaxial planar type For a band selection switch of an electronic tuner I Features
- Low forward dynamic resistance rf
- Less voltage dependence of diode capacitance CD
- S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) V R 35 V Forward current (DC) I F 100 mA Operating ambient temperature * Topr −25 to +85 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 33 V 0.01 100 nA Forward voltage (DC) V F IF = 100 mA 0.92 1.0 V Diode capacitance C D VR = 6 V, f = 1 MHz 0.9 1.2 pF Forward dynamic resistance * rf IF = 2 mA, f = 100 MHz 0.65 0.85 Ω I Electrical Characteristics Ta = 25°C Note) 1 ɽEach characteristic is a standard for individual diodes 2ɽRated input/output frequency: 100 MHz ɹ 3ɽ*: r f measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) * : Maximum ambient temperature during operation EIAL : SC-70 S-Mini Type Package (3-pin) 1 : Anode 1 2 : Cathode 2 3 : Anode 2 Cathode 1 2.1 ± 0.1 1.3 ± 0.10.9 ± 0.1 0.7 ± 0.1 0.3 + 0.1 − 0 0.15 + 0.1 − 0.05 2.0 ± 0.2 1.25 ± 0.1 0.4250.425 0.650.2 0.65 0 to 0.1 0.2 ± 0.1
IF VF rf f rf IF IR TaCD VR 10−1 102 103 Forward voltage VF (V) Forward current IF (mA) Ta = 25°C 0.1 0.2 0.3 0.5 0 8 16 24 324 1 22 02 83 6 4 0 Reverse voltage VR (V) Diode capacitance CD (pF) f = 1 MHz Ta = 25°C 10−2 0 40 80 120 16020 60 100 140 10−1 102 Ambient temperature Ta (°C) Reverse current IR (nA) VR = 33 V 0.4 0.2 0.8 0.6 1.0 11 0 3 30 100 Forward current IF (mA) Forward dynamic resistance rf (Ω) f = 100 MHz Ta = 25°C 0.4 0.2 0.8 0.6 1.0 10 100 30 300 1 000 Frequency f (MHz) Forward dynamic resistance rf (Ω) IF = 2 mA Ta = 25°C