MA3XD15 PANASONIC | Alldatasheet
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Schottky Barrier Diodes (SBD) MA3XD15 Silicon epitaxial planar type For rectification For protection against reverse current I Features
- Mini type 3-pin package
- Low VF or Low IR type: VF < 0.45 V, IR < 100 µA
- Allowing to rectify under (IF(AV) = 1 A) condition I Absolute Maximum Ratings Ta = 25°C Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) V R 20 V Repetitive peak reverse voltage VRRM 25 V Non-repetitive peak forward I FSM 3A surge current*1 Average forward current*2 IF(AV) 1.0 A Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 20 V 100 µA Forward voltage (DC) V F IF = 1.0 A 0.45 V Terminal capacitance C t VR = 0 V, f = 1 MHz 120 pF I Electrical Characteristics Ta = 25°C ± 3°C Note) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. Note) * 1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : With a alumina PC board Internal Connection Marking Symbol: M5N 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) 2.8 + 0.2 − 0.3 1.5 + 0.25 0.950.95 1.9 ± 0.2 0.4 + 0.1 − 0.05 1.1 + 0.2 − 0.1 0.8 0.4 ± 0.2 0 to 0.1 0.16 + 0.1 − 0.06 1.45 0.1 to 0.3 2.9 + 0.2 − 0.05
Schottky Barrier Diodes (SBD) MA3XD15 IF VF Ct VRIR VR 10−4 10−3 10−2 10−1 Forward voltage VF (V) Forward current IF (A) 10−7 0 5 10 15 20 25 30 10−6 10−5 10−4 10−3 10−2 Reverse voltage VR (V) Reverse current IR (A) 120 160 200 0 4 8 1 21 62 0 Reverse voltage VR (V) Terminal capacitance Ct (pF)