MA3X791 PANASONIC | Alldatasheet
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Schottky Barrier Diodes (SBD) MA3X791 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features
- Two MA3X786s are contained in one package (series connection)
- Allowing to rectify under (IF(AV) = 100 mA) condition
- Optimum for high-frequency rectification because of its short re- verse recovery time (trr)
- Low VF (forward rise voltage), with high rectification efficiency I Absolute Maximum Ratings Ta = 25°C Unit : mm Marking Symbol: M4A Internal Connection Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 30 V 15 µA Forward voltage (DC) V F IF = 100 mA 0.55 V Terminal capacitance C t VR = 0 V, f = 1 MHz 20 pF Reverse recovery time* trr IF = IR = 100 mA 2 ns Irr = 10 mA, RL = 100 Ω I Electrical Characteristics Ta = 25°C Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the char ge of a human body and the leakage of current from the operating equipment. ɹ 2. Rated input/output frequency: 250 MHz 3. * : t rr measuring circuit Parameter Symbol Rating Unit Reverse voltage (DC) V R 30 V Repetitive peak reverse voltage VRRM 30 V Peak forward Single I FM 300 mA current Series*2ɹ 200 Average forward Single I F(AV) 100 mA current Series*2ɹ 70 Non-repetitive peak forward I FSM 1A surge current*1 Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Note) * 1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA RL = 100 Ω 10% Input Pulse Output Pulse Irr = 10 mA tr tp trr VR IF t t A 2.8 + 0.2 − 0.3 1.5 + 0.25 0.950.95 1.9 ± 0.2 0.4 + 0.1 − 0.05 1.1 + 0.2 − 0.1 0.8 0.4 ± 0.2 0 to 0.1 0.16 + 0.1 − 0.06 1.45 0.1 to 0.3 2.9 + 0.2 − 0.05
Schottky Barrier Diodes (SBD) MA3X791 IF VF IR VRVF Ta IR Ta Ct VR 10−5 10−4 10−3 10−2 10−1 Forward voltage VF (V) Forward current IF (A) Ta = 125°C 75°C 25°C − 20°C 10−7 0 5 10 15 20 25 30 10−6 10−5 10−4 10−3 10−2 Reverse voltage VR (V) Reverse current IR (A) Ta = 125°C 75°C 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 −40 0 40 80 120 160 200 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 100 mA 10 mA 3 mA 0 5 10 15 20 25 30 Reverse voltage VR (V) Terminal capacitance Ct (pF) 0.1 −40 0 40 80 120 160 200 100 1 000 10 000 Ambient temperature Ta (°C) Reverse current IR (µA) VR = 30 V 3 V 1 V IF(surge) tW 0.1 0.03 30 100 0.3 300 1 000 0.1 1 10 30.3 Pulse width tW (ms) Forward surge current IF(surge) (A) tW IF(surge) Ta = 25°C