MA3X158 PANASONIC | Alldatasheet
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Technical content
Silicon epitaxial planar type For small power rectification and surge absorption I Features
- High reverse voltage VR
- Large forward current IF(AV)
- Small package and allowing automatic mounting I Absolute Maximum Ratings Ta = 25°C Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) V R 200 V Repetitive peak reverse voltage VRRM 250 V Non-repetitive peak forward V RSM 300 V surge voltage Output current I F(AV) 100 mA Non-repetitive peak forward I FSM 500 mA surge current* Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Internal Connection Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 200 V 1.0 µA Forward voltage (DC) V F IF = 100 mA 1.3 V I Electrical Characteristics Ta = 25°C Note) Rated input/output frequency: 3 MHz 2.8 + 0.2 − 0.3 1.5 + 0.25 0.950.95 1.9 ± 0.2 0.4 + 0.1 − 0.05 1.1 + 0.2 − 0.1 0.8 0.4 ± 0.2 0 to 0.1 0.16 + 0.1 − 0.06 1.45 0.1 to 0.3 2.9 + 0.2 − 0.05 JEDEC : TO-236 EIAJ : SC-59 Mini Type Package (3-pin) Note) * : t = 1 s Marking Symbol: M1C 1 : Anode 2 : NC 3 : Cathode
IF VF IR Ta VF TaIR VR MA3X158 10–3 10–2 10–1 102 Forward voltage VF (V) Forward current IF (mA) Ta = 125°C 75°C 25°C – 20°C 10−4 0 40 80 120 160 200 240 10−3 10−2 10−1 Reverse voltage VR (V) Reverse current IR (µA) Ta = 125°C 25°C 75°C 1.2 1.0 0.8 0.6 0.4 0.2 −40 0 40 80 120 160 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 100 mA 10 mA 1 mA 0.1 mA 10−4 −40 0 40 80 120 160 10−3 10−2 10−1 Ambient temperature Ta (°C) Reverse current IR (µA) 100 V VR = 200 V