MA3V175D PANASONIC | Alldatasheet

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Technical content

MA3V175D, MA3V176D Silicon epitaxial planar type For switching circuits I Features

  • Short reverse recovery time trr
  • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C 1 : Cathode 2 : Anode 3 : Cathode New S-Type Package Unit : mm Parameter Symbol Rating Unit Reverse voltage MA3V175D VR 40 V (DC) MA3V176D 80 Peak reverse MA3V175D VRM 40 V voltage MA3V176D 80 Forward current Single I F 100 mA (DC) Double 150 Peak forward Single I FM 225 mA current Double 340 Non-repetitive peak Single I FSM 500 mA forward surge current* Double 750 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Internal Connection Note) * : t = 1 s Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) MA3V175D IR VR = 35 V 0.1 µA MA3V176D VR = 75 V 0.1 Forward voltage (DC) V F IF = 100 mA 1.2 V Reverse voltage (DC) MA3V175D VR IR = 100 µA4 0 V MA3V176D 80 Terminal capacitance C t VR = 0 V, f = 1 MHz 4 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V 10 ns Irr = 0.1 · IR, RL = 100 Ω I Electrical Characteristics Ta = 25°C Note) 1. Rated input/output frequency: 100 MHz 2. * : t rr measuring circuit 1 32 4.0 ± 0.2 marking 2.54 ± 0.15 1.271.27 2.0 ± 0.2 0.7 ± 0.1 0.45 + 0.2 − 0.1 123 Input Pulse Output Pulse Sampling Oscilloscope R i = 50 Ω DUT Rs = 50 Ω V = VR + IR·RS IF tr tP trr t Irr = 0.1·IR IF010% 90% tp = 100 ns tr = 0.6 ns δ = 0.05 IF = 10 mA VR = 6 V RL = 100 Ω

IF  VF IR  Ta VF  Ta IR  VRIR  VR MA3V175D, MA3V176D Ct  VR 10−2 10−1 102 103 Forward voltage VF (V) Forward current IF (mA) Ta = 125°C 75°C 25°C − 20°C 10−4 0 1 02 03 04 05 06 0 10−3 10−2 10−1 Reverse voltage VR (V) Reverse current IR (µA) Ta = 125°C 75°C 25°C MA3V175D 10−4 0 2 04 06 08 0 1 0 0 1 2 0 10−3 10−2 10−1 Reverse voltage VR (V) Reverse current IR (µA) Ta = 125°C 75°C 25°C MA3V176D 1.2 1.0 0.8 0.6 0.4 0.2 −40 0 40 80 120 160 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 10 mA 1 mA 3 mA 0.1 mA 10−4 −40 0 40 80 120 160 10−3 10−2 10−1 Ambient temperature Ta (°C) Reverse current IR (µA) MA3V175D VR = 40 V 20 V 10−4 −40 0 40 80 120 160 10−3 10−2 10−1 Ambient temperature Ta (°C) Reverse current IR (µA) MA3V176D VR = 80 V 40 V 0.2 0.4 0.6 0.8 Reverse voltage VR (V) Terminal capacitance Ct (pF) 08 1 24 1 62 02 42 83 23 64 0 f = 1 MHz Ta = 25°C IR  Ta