MA3D798 PANASONIC | Alldatasheet
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Technical content
Schottky Barrier Diodes (SBD) MA3D798 Silicon epitaxial planar type (cathode common) For switching power supply I Features
- TO-220D package
- Allowing to rectify under (IF(AV) = 20 A) condition
- Cathode common dual type
- Low VF (forward voltage) type: VF < 0.47 V (at IF = 10 A) I Absolute Maximum Ratings Ta = 25°C Unit : mm Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 30 V Average forward current I F(AV) 20 A Non-repetitive peak forward I FSM 120 A surge current* Junction temperature T j −40 to +125 °C Storage temperature T stg −40 to +125 °C 1 : Anode 2 : Cathode (common) 3 : Anode TO-220D package Note) * : Half sine-wave; 10 ms/cycle Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 30 V 5 mA Forward voltage (DC) V F IF = 10 A 0.47 V High voltage rectification R th(j-c) Direct current (between junction and case) 3 °C/W I Electrical Characteristics Ta = 25°C Note) Rated input/output frequency: 150 MHz 9.9 ± 0.3 4.2 ± 0.2 4.6 ± 0.2 2.9 ± 0.2 0.8 ± 0.1 1.4 ± 0.2 φ 3.2 ± 0.1 2.6 ± 0.1 0.55 ± 0.15 2.54 ± 0.3 1.6 ± 0.2
Schottky Barrier Diodes (SBD) MA3D798 IF VF IR TaIR VR VF Ta 10–3 10−2 10−1 102 Forward voltage VF (V) Forward current IF (A) Ta = 125°C 75°C 25°C – 20°C 10−2 0 1 02 03 04 05 06 0 10−1 102 103 Reverse voltage VR (V) Reverse current IR (mA) Ta = 125°C 75°C 25°C 10−3 −40 0 40 80 120 160 200 10−2 10−1 102 Ambient temperature Ta (°C) Reverse current IR (mA) VR = 30 V 20 V 10 V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 −40 0 40 80 120 160 200 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 10 A 1 A 5 A