MA3D760 PANASONIC | Alldatasheet

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Technical content

Schottky Barrier Diodes (SBD) MA3D760 Silicon epitaxial planar type (cathode common) For switching power supply I Features

  • Low forward rise voltage VF
  • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV
  • Easy-to-mount, caused by its V cut lead end I Absolute Maximum Ratings Ta = 25°C Unit : mm 1 : Anode 2 : Cathode (Common) 3 : Anode Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 90 V Average forward current I F(AV) 5A Non-repetitive peak forward I FSM 80 A surge current* Junction temperature T j −40 to +125 °C Storage temperature T stg −40 to +125 °C Note) * : Half sine-wave; 10 ms/cycle Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 90 V, TC = 25°C1 m A Forward voltage (DC) V F IF = 2.5 A, TC = 25°C 0.80 V Thermal resistance* Rth(j-c) Direct current (between junction and case) 3 °C/W I Electrical Characteristics Ta = 25°C Note) 1. Rated input/output frequency: 200 MHz 2. * : T C = 25°C 9.9 ± 0.3 4.2 ± 0.2 4.6 ± 0.2 2.9 ± 0.2 0.8 ± 0.1 1.4 ± 0.2 φ 3.2 ± 0.1 2.6 ± 0.1 0.55 ± 0.15 2.54 ± 0.3 1.6 ± 0.2

Schottky Barrier Diodes (SBD) MA3D760 IF  VF IR  VRVF  Ta IR  Ta Ct  VR PD(AV)  IF(AV) IF(AV)  TC 10−4 10−3 10−2 10−1 Forward voltage VF (V) Forward current IF (A) Ta = 125°C 75°C 25°C −20°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 −40 0 40 80 120 160 200 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 5 A 2.5 A 1 A 10−1 0 2 04 06 08 0 1 0 0 1 2 0 102 103 104 Reverse voltage VR (V) Reverse current IR (µA) Ta = 125°C 75°C 25°C 10−1 −40 0 40 80 120 160 200 102 103 104 Ambient temperature Ta (°C) Reverse current IR (µA) VR = 90 V 30 V 10 V 100 200 300 400 0 2 04 06 08 0 1 0 0 1 2 0 Reverse voltage VR (V) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 0123456 Average forward current IF(AV) (A) Average forward power PD(AV) (W) t0 / t1 = 1/6 DC 20 40 60 80 100 120 140 Case temperature TC (°C) Average forward current IF(AV) (A) t0 / t1 = 1/2 DC