MA3D755 PANASONIC | Alldatasheet
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Schottky Barrier Diodes (SBD) MA3D755 Silicon epitaxial planar type (cathode common) For switching power supply I Features
- Low forward rise voltage VF
- TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV
- Easy-to-mount, caused by its V cut lead end I Absolute Maximum Ratings Ta = 25°C Unit : mm 1 : Anode 2 : Cathode 3 : Anode Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 60 V Average forward current I F(AV) 5A Non-repetitive peak forward I FSM 90 A surge current* Junction temperature T j −40 to +125 °C Storage temperature T stg −40 to +125 °C Note) * : Half sine-wave; 10 ms/cycle Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 60 V 1 mA Forward voltage (DC) V F IF = 2.5 A 0.58 V Thermal resistance R th(j-c) Direct current (between junction and case) 3 °C/W I Electrical Characteristics Ta = 25°C Note) Rated input/output frequency: 200 MHz Internal Connection 123 9.9 ± 0.3 4.2 ± 0.2 4.6 ± 0.2 2.9 ± 0.2 0.8 ± 0.1 1.4 ± 0.2 φ 3.2 ± 0.1 2.6 ± 0.1 0.55 ± 0.15 2.54 ± 0.3 1.6 ± 0.2
Schottky Barrier Diodes (SBD) MA3D755 IF VF IR VRVF Ta IR Ta Ct VR PD(AV) IF(AV) IF(AV) TC 10−4 10−3 10−2 10−1 Forward voltage VF (V) Forward current IF (A) Ta = 125°C 75°C 25°C −20°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 −40 0 40 80 120 160 200 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 2.5 A 1 A 100 mA 10−3 0 1 02 03 04 05 06 0 10−2 10−1 102 Reverse voltage VR (V) Reverse current IR (mA) Ta = 125°C 75°C 25°C 10−3 −40 0 40 80 120 160 200 10−2 10−1 102 Ambient temperature Ta (°C) Reverse current IR (mA) VR = 60 V 30 V 10 V 100 200 300 400 500 600 700 800 0 1 02 03 04 05 06 0 Reverse voltage VR (V) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 0123456 Average forward current IF(AV) (A) Average forward power PD(AV) (W) t0 / t1 = 1/6 DC 20 40 60 80 100 120 140 Case temperature TC (°C) Average forward current IF(AV) (A) t0 / t1 = 1/2 DC