MA2S077 PANASONIC | Alldatasheet
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Technical content
Silicon epitaxial planar type For band switching I Features
- Low forward dynamic resistance rf
- Less voltage dependence of diode capacitance CD
- SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package I Absolute Maximum Ratings Ta = 25°C Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) V R 35 V Forward current (DC) I F 100 mA Operating ambient temperature * Topr −25 to +85 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 33 V 0.01 100 nA Forward voltage (DC) V F IF = 100 mA 0.92 1.0 V Diode capacitance C D VR = 6 V, f = 1 MHz 0.9 1.2 pF Forward dynamic resistance * rf IF = 2 mA, f = 100 MHz 0.65 0.85 Ω I Electrical Characteristics Ta = 25°C Note) 1 ɽRated input/output frequency: 100 MHz ɹ 2ɽ*: r f measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER Marking Symbol: SNote) * : Maximum ambient temperature during operation 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) 1.7 ± 0.1 0.8 ± 0.10.7 ± 0.1 0 to 0.1 0.27 + 0.05 − 0.02 0.27 + 0.05 − 0.02 1.3 ± 0.1 0.15 min. 0.15 min. 0.13 + 0.05 − 0.02
IF VF rf f rf IF IR TaCD VR 120 100 Forward voltage VF (V) Forward current IF (mA) Ta = 25°C 0.1 0 8 16 24 40 36324 1 22 02 8 0.2 0.3 0.5 100 Reverse voltage VR (V) Diode capacitance CD (pF) f = 1 MHz Ta = 25°C 0.1 0 40 80 120 16020 60 100 140 100 1 000 Ambient temperature Ta (°C) Reverse current IR (nA) VR = 33 V 0.4 0.2 0.8 0.6 1.0 11 0 3 30 100 Forward current IF (mA) Forward dynamic resistance rf (Ω) f = 100 MHz Ta = 25°C 0.4 0.2 0.8 0.6 1.0 10 100 30 300 1 000 Frequency f (MHz) Forward dynamic resistance rf (Ω) IF = 2 mA Ta = 25°C