MA2H735 PANASONIC | Alldatasheet
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Technical content
Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type For switching circuits I Features
- Small and thin Half New Mini-power package
- Allowing to rectify under (IF(AV) = 1 A) condition
- Low VF (forward voltage) type: VF > 0.5 Vʢat IF = 1 Aʣ I Absolute Maximum Ratings Ta = 25°C Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) V R 30 V Repetitive peak reverse voltage VRRM 30 V Average forward current I F(AV) 1A Non-repetitive peak forward I FSM 30 A surge current* Junction temperature T j 125 °C Storage temperature T stg −40 to +125 °C Marking Symbol: A Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 30 V 1 mA Forward voltage (DC) V F IF = 1 A 0.50 V Terminal capacitance C t VR = 10 V, f = 1 MHz 50 pF Reverse recovery time* trr IF = IR = 100 mA 30 ns Irr = 0.1 · IR, RL = 100 Ω I Electrical Characteristics Ta = 25°C Note) 1. Rated input/output frequency: 20 MHz 2. * : t rr measuring instrument 1 : Anode 2 : Cathode Half New Mini-Power Package Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA RL = 100 Ω 10% Input Pulse Output Pulse Irr = 0.1 · IR tr tp trr VR IF t t A 3.2 ± 0.1 1.9 ± 0.1 1.85 ± 0.2 1.0 ± 0.2 0 to 0.05 0.25 + 0.1 − 0.05 0.9 ± 0.20.9 ± 0.2 3.8 ± 0.2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Schottky Barrier Diodes (SBD) MA2H735 IF VF Ct VRIR VR 10−5 10−4 10−3 10−2 10−1 Forward voltage VF (V) Forward current IF (A) Ta = 125°C 75°C 25°C − 20°C 10−4 0 5 10 15 20 25 30 10−3 10−2 10−1 Reverse voltage VR (V) Reverse current IR (mA) Ta = 125°C 75°C 25°C 100 150 200 250 300 0 5 10 15 20 25 30 Reverse voltage VR (V) Terminal capacitance Ct (pF) Ta = 25°C