MA2D601 PANASONIC | Alldatasheet
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Technical content
Fast Recovery Diodes (FRD) MA2D601 Silicon planar type For high-frequency rectification For Snubber circuit of power supplies For secondary side rectification for a power supply I Features
- High reverse voltage V R > 600 V
- Short reverse recovery time trr < 50nsec
- TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Non-repetitive peak reverse V RSM 600 V surge voltage Average forward current I F(AV) 5.0 A Non-repetitive peak forward I FSM 50 A surge current* Junction temperature T j −40 to +150 °C Storage temperature T stg −40 to +150 °C Unit : mm 1 : Cathode 2 : Anode Parameter Symbol Conditions Min Typ Max Unit Repetitive peak reverse current I RRM1 VRRM = 600 V, TC = 25°C 100 µA IRRM2 VRRM = 600 V, Tj = 150°C 500 µA Forward voltage (DC) V F IF = 5.0 A, TC = 25°C 1.5 V Reverse recovery time* trr IF = 1 A, IR = 1 A 50 ns Thermal resistance R th(j-c) 3.0 °C/W Rth(j-a) 63 °C/W I Electrical Characteristics Ta = 25°C ± 3°C Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg × cm 3. * : t rr measuring circuit D.U.T trr 0.1 × IR IF IR 50 Ω 5.5 Ω 50 Ω 9.9 ± 0.3 4.2 ± 0.2 4.6 ± 0.2 2.9 ± 0.2 0.8 ± 0.1 1.4 ± 0.2 φ 3.2 ± 0.1 2.6 ± 0.1 0.55 ± 0.15 2.54 ± 0.3 1.5 + 0 − 0.4 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
Fast Recovery Diodes (FRD) MA2D601 IF VF IR VR 0.001 0.000 1 0 0.5 1 1.5 2 2.5 0.01 0.1 100 Forward voltage VF (V) Forward current IF (A) Ta = 150°C 25°C 0.001 0 100 200 300 400 500 600 0.01 0.1 100 Reverse voltage VR (V) Reverse current IR (µA) Ta = 150°C 25°C