MA2C188 PANASONIC | Alldatasheet
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Technical content
Silicon epitaxial planar type For high speed and high voltage switching, small-power rectification I Features
- Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole
- High voltage (VR: 200 V) rectification is possible I Absolute Maximum Ratings Ta = 25°C 1: Cathode 2: Anode JEDEC: DO-34 Unit : mm Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) I R VR = 200 V 200 nA Forward voltage (DC) V F IF = 200 mA 1.2 V Reverse voltage (DC) V R IR = 100 µA 250 V Terminal capacitance C t VR = 0 V, f = 1 MHz 1.0 pF Reverse recovery time* trr IF = 10 mA, VR = 1 V 60 ns Irr = 0.1 · IR, RL = 100 Ω I Electrical Characteristics Ta = 25°C Note) 1. Rated input/output frequency: 20 MHz 2. * : t rr measuring circuit Parameter Symbol Rating Unit Reverse voltage (DC) V R 200 V Peak reverse voltage V RM 250 V Average power dissipation P F(AV) 400 mW Output current I O 200 mA Repetitive peak forward current IFRM 625 mA Non-repetitive peak forward I FSM 1A surge current* Junction temperature T j 175 °C Storage temperature T stg −65 to +175 °C Note) * : t = l s φ 0.45 max. φ 1.75 max. 13 min. 0.2 max.0.2 max. 13 min. 2.2 ± 0.3 COLORED BAND INDICATES CATHODE Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 10 mA VR = 1 V RL = 100 Ω 10% Input Pulse Output Puls Irr = 0.1 · IR tr tp trr VR IF t t A
Ct VR IR Ta VF Ta MA2C188 0.01 0.1 100 1 000 Forward voltage VF (V) Forward current IF (mA) Ta = 150°C 100°C 25°C − 20°C IR VR IF VF 0.01 0 50 100 150 200 250 300 0.1 100 1 000 Reverse voltage VR (V) Reverse current IR (µA) Ta = 125°C 100°C 25°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 −40 0 40 80 120 160 200 Ambient temperature Ta (°C) Forward voltage VF (V) IF = 200 mA 10 mA 3 mA 0.01 −40 0 40 80 120 160 200 0.1 100 Ambient temperature Ta (°C) Reverse current IR (µA) VR = 250 V 200 V 100 V 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 300 Reverse voltage VR (V) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C