MA27P11 PANASONIC | Alldatasheet
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1Publication date: April 2003 SKL00014AED PIN diodes MA27P11 Silicon epitaxial planar type For high frequency switch ■ Features
- Low terminal capacitance
- Low forward dynamic resistance
- SSS-Mini type 2-pin package ■ Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Rating Unit Reverse voltage V R 60 V Forward current I F 50 mA Junction temperature T j 150 °C Storage temperature T stg −55 to + 150 °C Marking Symbol: F 1: Anode 2: Cathode SSSMini2-F2 Package 5° 0.27 1.40±0.05 0.52±0.03 1.00±0.05 0.60±0.05 0.15 min.0 to 0.01 0.15 min.0.15 max. +0.05 –0.02 0.12+0.05 –0.02 Parameter Symbol Conditions Min Typ Max Unit Forward voltage V F1 IF = 1 mA 0.76 0.85 V VF2 IF = 10 mA 0.85 1.00 V Reverse current I R VR = 60 V 1.0 100 nA Terminal capacitance C t VR = 0 V, f = 1 MHz 0.55 0.80 pF Forward dynamic resistance r f1 IF = 1 mA, f = 100 MHz 1.6 3.0 Ω rf2 IF = 10 mA, f = 100 MHz 0.9 1.5 Ω ■ Electrical Characteristics Ta = 25°C ± 3°C Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2 SKL00014AED
IF VF IR VR Ct VR rf IF 10−3 10−1 10−2 102 103 Ta = 25°C Forward voltage VF (V) Forward current IF (mA) 10−4 10−2 10−3 0 1 02 03 04 05 06 0 10−1 Reverse voltage VR (V) Reverse current IR (nA) Ta = 25°C 0.6 0.4 0.2 0 5 10 15 20 25 Ta = 25°C f = 1 MHz Reverse voltage VR (V) Terminal capacitance Ct (pF) 10−1 10−2 102 103 10−1 11 0 Forward current IF (mA) Forward dynamic resistance rf (Ω) Ta = 25°C f = 100 MHz
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