MA1113-1 MITSUBISHI | Alldatasheet

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Technical content

  1. Electrical Performances(Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω) No. Items Frequency1 Symbol f Unit MHz Standard Condition 1990 – – – 1930 Output Power2PoutdBm – – – – – – +43 Output RF modulation spectrum ; from the carrier 3– – – 2fo 3fo 4fo dB dB dB dB dB dB dB dB +0.5 –30 –33 –60 –70 –73 –75 –80 – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – – Max Type Min Quiescent current6IcqA 1.5 – – – – – – Spurious ; in-band out-band 4dBm dBm –36 –30 – – – – – – – – – – – – Harmonics5dBc dBc dBc – – – – – – – – – –60 –65 –70 – – – – – – – – –

100 KHz

200 KHz

250 KHz

400 KHz

600 KHz

to < 1200 KHz

1200 KHz

to < 1800 KHz

1800 KHz

to < 6000 KHz >= 6000 KHz P out = +43 dBm (Pin control) Pout = +43 dBm Pin = 0mW – 97 – – 96 – MA1113-1 For PCS - 20W Power Amplifier MA1113-1 Vg(–6V:PIN#12) GND(PIN#11) Vd(+10V:PIN#24) RF IN RF OUT Vc(+25V:PIN#25)

25 PINs D-SUB

Vdet(PIN#13) (out) 142 mm 148 mm 3 mm mm mm mm mm 10 mm

4 HOLES

φ 3.5 mm

DESCRIPTION

The MA1113-1 is a 20W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors, also RF power monitoring circuit.

FEATURES

nSpecified +25/+10 Volt Chracteristics

  • RF Output Power : +43 dBm (typ.)
  • Harmonics : –65 dBc typ. nSmall Size : 77 ·148 ·40 mm n50 Ohm Input/Output Impedances APPLICATION nPCS (1930 ~ 1990 MHz) Base station Amplifier Specifications (MA1113-1) 1. Maximum Ratings OUTLINE DRAWING No. Condition Case temperature1 Storage temperature Collector Voltage Drain Voltage Gate Voltage Symbol Items TC Tstg VC Vd Vg Unit V V V Vg = –6V Vd = +10V Standard –40 ~ +70 –40 ~ +80 +26.0 +11.5 –10.0 6RF Input PowerPindBm –9.0