M81709FP MITSUBISHI | Alldatasheet

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Technical content

Mar. 2006

APPLICATIONS

MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC- servomotor and general purpose.

FEATURES

¡HALF BRIDGE DRIVER ¡UNDERVOLTAGE LOCKOUT ¡SOP-16 PACKAGE

DESCRIPTION

M81709FP is high voltage Power MOSFET and IGBT mod- ule driver for half bridge applications.BLOCK DIAGRAM PIN CONFIGURATION (TOP VIEW) Outline:16P2N NC:NO CONNECTION MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER LO 1 GND VCC NC NC V S VB HO NC GND LIN NC HIN NC NC NC 7 VB 8 HO 6 VS VCC 1 LO

2 GND

R S RQ UV DETECT FILTER VREG

Mar. 2006 V V V V V V V V/ns W mW/°C °C/W V V V V V V V V S+10 V S V S+20 500 VB VCC VCC ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Symbol UnitParameter T est conditions Limits Min. Typ. Max. V B > 10V VBS = VB–VS HIN, LIN VB VS VBS VHO VCC VLO VIN –0.5 ~ 624 VB–24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 –0.5 ~ 24 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 ±50 0.90 9.0 –20 ~ 125 –20 ~ 100 –40 ~ 125 V BS = VB–VS HIN, LIN Ta = 25°C, On Board Ta > 25°C, On Board High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature VB VS VBS VHO VCC VLO VIN dVS/dt Pd K q Rth(j-c) Tj Topr Tstg Symbol Parameter Test conditions Ratings Unit RECOMMENDED OPERATING CONDITIONS MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) 2.0 1.5 1.0 0.5 0 1251007550250 Temperature Ta (°C) Package Power Dissipation Pd (W) * For proper operation, the device should be used within the recommended conditions.

Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER µA mA mA V V V V µA µA V V µs V V µs A A Ω Ω ns ns ns ns ns ns ns ns ns ns 0.2 13.8 2.1 0.6 8.0 0.3 8.0 0.3 100 100 100 100 0.2 0.5 14.4 3.0 1.5 8.9 0.7 7.5 8.9 0.7 7.5 2.5 2.5 2.5 135 135 135 135 1.0 0.5 1.0 0.1 4.0 2.0 1.0 9.8 9.8 3.0 170 170 170 170 Floating Supply Leakage Current V BS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current V BS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off Symbol UnitParameter T est conditions Limits Min. Typ.* Max. VB = VS = 600V HIN = LIN = 0V HIN = LIN = 0V IO = 0A, LO, HO IO = 0A, LO, HO HIN, LIN HIN, LIN VIN = 5V VIN = 0V VO = 0V, VIN = 5V, PW < 10µs VO = 15V, VIN = 0V, PW < 10µs IO = –200mA, ROH = (VOH–VO)/IO IO = 200mA, ROL = VO/IO CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between LO-GND |tdLH(HO)–tdLH(LO)| |tdHL(HO)–tdHL(LO)| IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvh tVBSuv VCCuvr VCCuvh tVCCuv IOH IOL ROH ROL tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL ∆tdLH ∆tdHL ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) * Typ. is not specified.

Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER TIMING DIAGRAM FUNCTION TABLE (X: H or L) LO = HO = Low LO = High HO = High LO = HO = Low HO = Low, V BS UV tripped LO = High, VBS UV tripped LO = Low, VCC UV tripped HO = LO = Low, VCC UV tripped L L H H X X L H HIN Behavioral stateLIN V BS UV V CC UV HO LO L H L H L H X X H H H H L L H H H H H H H H L L L L H L L L L L L H L L L H L L Note : “L” state of VBS UV, VCC UV means that UV trip voltage. In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. 1.Input/Output Timing Diagram HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.) In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.HIN LIN HO LO

Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER 2.VCC (VBS) Supply Under Voltage Lockout Timing Diagram When VCC Supply Voltage keeps lower UV Trip Voltage (V CCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output signal becomes “L”. And then, when V CC Supply Voltage is higher than UV Reset Voltage, output signal LO becomes “H”. When VCC Supply Voltage keeps lower UV Trip Voltage (V CCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output signal becomes “L”. And then, when V CC Supply Voltage is higher than UV Reset Voltage, input signal (LIN) is L; output signal HO becomes “H”. When VBS Supply Voltage keeps lower UV Trip Voltage (V BSuvt = VBSuvr–VBSuvh) for VBS Supply UV Filter Time, output signal becomes “L”. And then, V BS Supply Voltage is higher than UV Reset Voltage, output signal HO keeps “L” until next input signal HIN is “H”. VCC LO LIN tVCCuv VCCuvr VCCuvh VCCuvt VCC LIN(L) VBS(H) HO HIN tVCCuv VCCuvr VCCuvh VCCuvt VBS HO HIN tVBSuv VBSuvr VBSuvh VBSuvt

Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER 3.Allowable Supply Voltage Transient It is recommended that supplying V CC firstly and supplying V BS secondly. In the case of shutting off supply voltage, shut- ting off VBS firstly and shutting off V CC secondly. At the time of starting V CC and VBS, power supply should be increased slowly. If it is increased rapidly, output signal (HO or LO) may be “H”. PACKAGE OUTLINE SOP16-P-300-1.27 Weight(g) JEDEC Code 0.2 Cu Alloy 16P2N-A Plastic 16pin 300mil SOP Symbol Min Nom Max A b c D E L y Dimension in Millimeters HE .350 .180 .010 .25 .57 .40 .271 .10 .81 .40 .20 .110 .35 .271 .87 .60 .251 .627 .20 .12 .50 .250 .210 .45 .18 .80 .10 b2 –. 7 6 0– 0° –8 ° e 16 9 HE E D e y F A A2 A1 L c e b2 Recommended Mount Pad Detail FDetail G z x –Z1 0.605 0.755 0.25 z b x M G