M81706AFP

M81706AFP MITSUBISHI | Alldatasheet

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Technical content

Aug. 2009

FEATURES

¡HALF BRIDGE DRIVER ¡UNDERVOLTAGE LOCKOUT ¡SOP-8 PACKAGE

DESCRIPTION

M81706AFP is high voltage Power MOSFET and IGBT module driver for half bridge applications. BLOCK DIAGRAM PIN CONFIGURATION (TOP VIEW) Outline:8P2S MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER 1. VCC 2. HIN 3. LIN 4. GND 8. V B 7. HO 6. VS 5. LO 8 VB 7 HO 6 VS VCC 5 LO

4 GND

R S RQ UV DETECT FILTER VREG

APPLICATIONS

MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC- servomotor and general purpose.

Aug. 2009 V V V V V V V W mW/°C °C/W V V V V V V V V S+10 VS V S+20 500 VB VCC VCC ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Symbol UnitParameter T est conditions Limits Min. Typ. Max. V BS = VB–VS HIN, LIN VB VS VBS VHO VCC VLO VIN –0.5 ~ 625 VB–25 ~ VB+0.5 –0.5 ~ 25 VS–0.5 ~ VB+0.5 –0.5 ~ 25 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 0.6 6.0 –20 ~ 125 –20 ~ 100 –40 ~ 125 V BS = VB–VS HIN, LIN Ta = 25°C, On Board Ta > 25°C, On Board High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature VB VS VBS VHO VCC VLO VIN Pd K q Rth(j-c) Tj Topr Tstg Symbol Parameter Test conditions Ratings Unit RECOMMENDED OPERATING CONDITIONS MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) Package Power Dissipation Pd (W) 0.2 0.4 0.7 0.1 0.3 0.5 0.6 25 50 100 75 125 150 Temperature Ta (°C)

Aug. 2009 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER µA mA mA V V V V µA µA V V V µs V V V µs mA mA Ω Ω ns ns ns ns ns ns ns ns ns ns 0.2 13.6 2.7 8.0 7.4 0.5 8.0 7.4 0.5 120 250 0.2 0.5 14.2 0.3 8.9 8.2 0.7 7.5 8.9 8.2 0.7 7.5 200 350 120 170 130 120 170 130 1.0 0.5 1.0 0.6 0.8 9.8 9.0 9.8 9.0 240 280 220 240 280 220 Floating Supply Leakage Current V BS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage Low Level Input Threshold Voltage High Level Input Bias Current Low Level Input Bias Current V BS Supply UV Reset Voltage VBS Supply UV Trip Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Trip Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current Output High Level On Resistance Output Low Level On Resistance High Side Turn-On Propagation Delay High Side Turn-Off Propagation Delay High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Propagation Delay Low Side Turn-Off Propagation Delay Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Delay Matching, High Side and Low Side Turn-On Delay Matching, High Side and Low Side Turn-Off Symbol UnitParameter T est conditions Limits Min. Typ.* Max. VB = VS = 600V HIN = LIN = 0V HIN = LIN = 0V IO = –20mA, LO, HO IO = 20mA, LO, HO HIN, LIN HIN, LIN VIN = 5V VIN = 0V VO = 0V, VIN = 5V, PW < 10µs VO = 15V, VIN = 0V, PW < 10µs IO = –20mA, ROH = (VOH–VO)/IO IO = 20mA, ROL = VO/IO CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between LO-GND |tdLH(HO)–tdLH(LO)| |tdHL(HO)–tdHL(LO)| IFS IBS ICC VOH VOL VIH VIL IIH IIL VBSuvr VBSuvt VBSuvh tVBSuv VCCuvr VCCuvt VCCuvh tVCCuv IOH IOL ROH ROL tdLH(HO) tdHL(HO) trH tfH tdLH(LO) tdHL(LO) trL tfL ∆tdLH ∆tdHL ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) * Typ. is not specified.

Aug. 2009 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER FUNCTION TABLE LO = HO = Low LO = High HO = High LO = HO = Low HO = Low, V BS UV tripped LO = High, VBS UV tripped LO = Low, VCC UV tripped HO = LO = Low, VCC UV tripped H→L H→L L→H L→H X X H→L L→H HIN Behavioral stateLIN V BS UV V CC UV HO LO L H L H L H X X H H H H L L H H H H H H H H L L L L H L L L L L L H L L L H L L Note1 : “L” state of VBS UV, VCC UV means that UV trip voltage. 2 : In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. 3 : X(HIN) : L→H or H→L.X(LIN) : H or L. 4 : Output signal (HO) is triggered by the edge of input signal. HIN HO TIMING DIAGRAM 1. Input/Output Timing Diagram HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.) In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.HIN LIN HO LO

Aug. 2009 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER 2. VCC (VBS) Supply Under Voltage Lockout Timing Diagram If VCC supply voltage drops below UV trip voltage (V CCuvt = VCCuvr–VCCuvh) for VCC supply UV filter time, output signal becomes “L”. As soon as V CC supply voltage rises over UV reset voltage, output signal LO becomes “H”. It VCC supply voltage drops below UV trip voltage (V CCuvt = VCCuvr–VCCuvh) for VCC supply UV filter time, output signal becomes “L”. As soon as V CC supply voltage rises over UV reset voltage, output signal HO becomes “H” it input signal is “H”. If VBS supply voltage drops below UV trip voltage (V BSuvt = VBSuvr–V BSuvh) for V BS supply UV filter time, output signal becomes “L”. As soon as V BS supply voltage rises over UV reset voltage, output signal HO becomes “H” at following “H” edge of input signal. VCC LO LIN tVCCuv VCCuvr VCCuvh VCCuvt VCC LIN(L) VBS(H) HO HIN tVCCuv VCCuvr VCCuvh VCCuvt VBS HO HIN tVBSuv VBSuvr VBSuvh VBSuvt

Aug. 2009 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER PACKAGE OUTLINE Symbol Min Nom Max A b c D E HE L y Dimension in Millimeters 0.05 – – –1 . 5– 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 –1 . 2 7 – 5.9 6.2 6.5 0.2 0.4 0.6 –0 . 9– –– 0 . 1 0° –1 0 ° –0 . 7 6 – –5 . 7 2 – 1.27 – – –– 1 . 9 e 8 5 HE E D e y F A A2 A1 L c Detail F e b2 Recommended Mount Pad z Z1 Detail G x –Z1 0.595 0.745 0.25 z b x M G Consideration As for this product, the terminal of low voltage part and high-voltage part is very clear (The Fifth: LO, The Sixth: V S). Therefore, pin insulation space distance should be taken enough. 3. Allowable Supply Voltage Transient It is recommended to supply V CC firstly and supply V BS secondly. In the case of shutting off supply voltage, please shut off VBS firstly and shut off V CC secondly. When applying V CC and VBS, power supply should be applied slowly. If it rises rapidly, output signal (HO or LO) may be malfunction.