M68745L MITSUBISHI | Alldatasheet
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SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO M68745L MITSUBISHI RF POWER MODULE Nov. ´97 2-R1.5 (36.5) 18 5 8.5 1.5 1.5 6.4 32.2 OUTLINE DRAWING PIN: Pin : RF INPUT VGG : GATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT GND: FIN H50 Dimensions in mm BLOCK DIAGRAM Load VSWR tolerance -30 No degradation or destroy Symbol Parameter Test conditions Limits Min Max Unit f PO 2fO ρin Frequency range Output power 2nd. harmonic Input VSWR Stability VDD =7.2V, VGG =5V, Pin=1mW, ZG =ZL=50Ω VDD =9V, Pin=1mW, PO =3.8W (VGG Adjust), ZL=20:1 ZG =ZL=50Ω , VDD =5-9.3V, Load VSWR <4:1 806 870 No parasitic oscillation MHz W dBc 3.8 %ηT Total efficiency 30PO =3.8W(VGG =Adjust), VDD =7.2V, Pin=1mW, Z G =ZL=50Ω Note. Above parameters, ratings, limits and test conditions are subject to change. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG =ZL=50Ω unless otherwise noted) ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Note. Above parameters are guaranteed independently. Symbol Parameter Conditions Ratings Unit V9VDD Supply voltage V5.5VGG Gate bias voltage mW6Pin Input power W6PO Output power °C-30 to +100TC (OP) Operation case temperature °C-40 to +100Tstg Storage temperature ZG =ZL=50Ω f=806-870MHz, ZG =ZL=50Ω f=806-870MHz, ZG =ZL=50Ω f=806-870MHz, ZG =ZL=50Ω
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO M68745L MITSUBISHI RF POWER MODULE Nov. ´97 TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY FREQUENCY f (MHz) 760 780 800 820 840 880 900 ηT PO ρin 3 30 VDD =7.2V VGG =5V Pin=1mW ZG =ZL=50 Ω 860 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER INPUT POWER P in (dBm) 100 -20 -15 -10 -5 10.00 1.00 0.01 -30 0 f=806MHz VDD =7.2V VGG =5V ZG =ZL=50Ω ηT PO 105-25 10.10 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE GATE VOLTAGE V GG (V) 5.0 4.0 3.0 1.0 0.0 f=806MHz VDD =7.2V Pin=1mW ZG =ZL=50 Ω 3.0 4.02.5 5.0 2.0 0.5 3.5 4.5 4.5 3.5 1.5 2.5 PO ηT OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE DRAIN SUPPLY VOLTAGE V DD (V) 7 9 114 12 ηT PO 6012 f=806MHz VGG =5V Pin=1mW ZG =ZL=50Ω OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER INPUT POWER P in (dBm) 100 -20 -15 -10 -5 10.00 1.00 0.01 -30 0 f=870MHz VDD =7.2V VGG =5V ZG =ZL=50Ω ηT PO 105-25 10.10 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE GATE VOLTAGE V GG (V) 5.0 4.0 3.0 1.0 0.0 3.0 4.02.5 5.0 2.0 0.5 3.5 4.5 4.5 3.5 1.5 2.5 PO ηT f=870MHz VDD =7.2V Pin=1mW ZG =ZL=50 Ω
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO M68745L MITSUBISHI RF POWER MODULE Nov. ´97 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE DRAIN SUPPLY VOLTAGE V DD (V) 7 9 114 12 ηT PO 6012 f=870MHz VGG =5V Pin=1mW ZG =ZL=50Ω