M68731HM MITSUBISHI | Alldatasheet
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SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.5W, FM PORTABLE RADIO M68731HM MITSUBISHI RF POWER MODULE Nov. ´97 PIN: Pin : RF INPUT VGG : GATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT GND: FIN BLOCK DIAGRAM Symbol Parameter Test conditions Limits Min Max Unit f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Load VSWR tolerance VDD =7.2V, VGG =3.5V, Pin=50mW VDD =9.2V, Pin=50mW, PO =7W (VGG adjust), ZL=20:1 145 174 6.5 -20 No degradation or destroy MHz W dBc Note. Above parameters, ratings, limits and test conditions are subject to change. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG =ZL=50Ω unless otherwise noted) Symbol Parameter Conditions Ratings Unit ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Note. Above parameters are guaranteed independently. V9.2VDD Supply voltage V6VGG Gate bias voltage mW70Pin Input power W10PO Output power °C-30 to +100TC (OP) Operation case temperature °C-40 to +110Tstg Storage temperature VGG ≤3.5V, ZG =ZL=50Ω f=145-174MHz, ZG =ZL=50Ω f=145-174MHz, ZG =ZL=50Ω f=145-174MHz, ZG =ZL=50Ω Stability ZG =50Ω , VDD =4-9.2V, Load VSWR <4:1- No parasitic oscillation OUTLINE DRAWING H46 Dimensions in mm 30±0.2 26.6±0.2 21.2±0.2 0.45 6±1 23.9±1 13.7±1 18.8±1 2-R1.5±0.1 1 2 3 4