M68701 MITSUBISHI | Alldatasheet
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SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO M68701 MITSUBISHI RF POWER MODULE Nov. ´97 8.3±1 43.3±1 21.3±1 50.4±1 51.3±1 OUTLINE DRAWING PIN: Pin : RF INPUT VGG : GATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT GND: FIN Dimensions in mm Symbol Parameter Test conditions Limits Min Max Unit f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Load VSWR tolerance VDD =12.5V, VGG =5V, Pin=1mW VDD =15.2V, Pin=1mW, PO =6W (VGG adjust), ZL=20:1 820 851 -30 No degradation or destroy MHz W dBc Note. Above parameters, ratings, limits and test conditions are subject to change. ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG =ZL=50Ω unless otherwise noted) Symbol Parameter Conditions Ratings Unit ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Note. Above parameters are guaranteed independently. V17VDD Supply voltage V5.5VGG Gate bias voltage mW10Pin Input power W10PO Output power °C-30 to +100TC (OP) Operation case temperature °C-40 to +100Tstg Storage temperature VGG ≤3.5V, ZG =ZL=50Ω f=820-851MHz, ZG =ZL=50Ω f=820-851MHz, ZG =ZL=50Ω f=820-851MHz, ZG =ZL=50Ω Stability 60.5±1 57.5±0.5 1 2 3 4 5 0.45±0.2 ZG =ZL=50Ω , VDD =10-16V, Load VSWR <4:1- No parasitic oscillation 2-R1.6+0.2 BLOCK DIAGRAM
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO M68701 MITSUBISHI RF POWER MODULE Nov. ´97 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER INPUT POWER P in (dBm) 1000 100 -20 100.0 10.0 1.0 0.1 -30 10-15 -10 -5 0 5-25 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER INPUT POWER P in (dBm) 1000 100 -20 100.0 10.0 1.0 0.1 -30 10-15 -10 -5 0 5-25 PO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY FREQUENCY f (MHz) 100 790 800 820 830 840 850 880 ηT PO ρin 860810 870 VDD =12.5V VGG =5V Pin=1mW ZG =ZL=50Ω OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE GATE SUPPLY VOLTAGE V GG (V) 100 ηT PO 909 3.4 3.8 4.2 4.8 4.6 f=820MHz VDD =12.5V Pin=1mW ZG =ZL=50Ω OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE GATE SUPPLY VOLTAGE V GG (V) 100 ηT PO 909 3.4 3.8 4.2 4.8 4.6 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE DRAIN SUPPLY VOLTAGE V DD (V) 4 6 18 ηT PO 8 10 12 16 f=851MHz VDD =12.5V Pin=1mW ZG =ZL=50Ω f=820MHz VGG =5V Pin=1mW ZG =ZL=50Ω f=820MHz VDD =12.5V VGG =5V ZG =ZL=50Ω ηT f=851MHz VDD =12.5V VGG =5V PO ηT
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO M68701 MITSUBISHI RF POWER MODULE Nov. ´97 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE DRAIN SUPPLY VOLTAGE V DD (V) 4 6 18 ηT PO 8 10 12 16 f=851MHz VGG =5V Pin=1mW ZG =ZL=50Ω