M63832GP MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Sep. 2001 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. PIN CONFIGURATION MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY

DESCRIPTION

The M63832GP/KP 7-channel sinkdriver, consists of 7 PNP and 14 NPN transistors connected to from seven high current gain driver pairs.

FEATURES

G High breakdown voltage (BV CEO ≥ 50V) G High-current driving (I C(max) = 500mA) G 3V micro computer compatible input G “L” active level input G With input diode G Wide operating temperature range (Ta = –40 to +85 °C) APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver. FUNCTION The M63832GP/KP is transistor-array of high active level seven units type which can do direct drive of 3 voltage micro- computer series. A resistor of 3.5k Ω is connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case where one of the inputs of the 7 circuit is “H” and the other are “L” to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driv- ing 500mA and are rated for operation with output voltage up to 50V . Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature V V mA V W –0.5 ~ +50 500 –0.5 ~ V CC 0.80(FP)/0.78(KP) –40 ~ +85 –55 ~ +125 RatingsSymbol Parameter Conditions Unit ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85 °C) Output, H Current per circuit output, L Ta = 25°C, when mounted on board VCC VCEO IC VI Pd Topr Tstg IN1 IN2 IN3 IN4 IN5 IN6 IN7 GND VCC INPUT OUTPUT Package type 16P2S-A(GP) 16P2Z-A(KP) CIRCUIT DIAGRAM INPUT 3.5K 7.2K 3K 1.05K 20K VCC GND OUTPUT Unit : Ω The seven circuits share the Vcc and GND The diode, indicated with the dotted line, is parasitic, and cannot be used.

Sep. 2001 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) V Parameter 2.7 Limits min typ maxSymbol Unit VCC Supply voltage “H” input voltage “L” input voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) IC VCC-0.5 3.0 3.6 400 200 VCC VCC-2.2 mA V V VIH VIL Duty Cycle GP/KP : no more than 2% Duty Cycle GP/KP : no more than 10% 1.15 0.93 –220 2.6 10000 2000 V (BR) CEO II ICC hFE V V µA mA 2.4 1.6 –600 4.0 Symbol UnitParameter T est conditions Limits min typ max Collector-emitter breakdown voltage Input current Supply current (AN only Input) DC amplification factor ICEO = 100µA VCC = 2.7V, VI = 0.5V, IC = 400mA VCC = 2.7V, VI = 0.5V, IC = 200mA VI = VCC-2.2V VCC = 3.6V, VI = 0.5V VCC = 2.7V, VCE = 2V, IC = 0.35A, T a = 25°C VCE(sat) Collector-emitter saturation voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C) ✽ : Typical values are at Ta = 25°C ns ns 120 4500 Symbol UnitParameter Test conditions Limits min typ max Turn-on time Turn-off time ton toff CL = 15pF (note 1) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) TIMING DIAGRAMNOTE 1 TEST CIRCUIT INPUT 50% 50% 50% 50% OUTPUT ton toff PG VCC VO RL CL50Ω INPUT OUTPUT (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω VI = 0.5 ~ 2.7V (2)Input-output conditions : RL = 30Ω, Vo = 10V, Vcc = 2.7V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Measured device

Sep. 2001 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 1.0 0.8 0.2 00 25 50 75 100 M63832KP M63832GP 0.416 0.406 0.78 0.4 0.6 Ambient temperature Ta (°C) Power dissipation Pd(max) (W) Output Saturation Voltage Collector Current Characteristics 400 300 200 100 00 0.5 1.0 1.5 2.0 Ta= 25°C 500 Output saturation voltage VCE(sat) (V) Collector current Ic (mA) Ta=85°C Vcc=2.7V VI=0.5V Ta= –20°C 101 102 10323 5 7 23 5 7 DC Amplification Factor Collector Current Characteristics 102 103 104 105 DC amplification factor hFE Collector current IC (mA) Ta= 85°C Ta= 25°C Ta= –40°C VCE=2V 00 0.4 1.2 1.6 2.0 400 300 200 100 500 Output Current Characteristics 0.8 Collector current IC (mA) Input voltage Vcc-VI (V) VCE=2V Ta= 85°C Ta= 25°C Ta= –40°C 500 400 300 200 100 0 10020 40 60 80 Duty cycle (%) Collector current Ic (mA) Duty Cycle-Collector Characteristics (M63832GP/KP)

  • The collector current values represent the current per circuit.
  • Repeated frequency ≥ 10Hz
  • The value the circle represents the value of the simultaneously-operated circuit.
  • Vcc = 3V •Ta = 25°C 500 400 300 200 100 0 10020 40 60 80 Duty cycle (%) Collector current Ic (mA) Duty Cycle-Collector Characteristics (M63832GP/KP)
  • The collector current values represent the current per circuit.
  • Repeated frequency ≥ 10Hz
  • The value the circle represents the value of the simultaneously- operated circuit.
  • Vcc = 3V
  • Ta = 85°C

Sep. 2001 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63832GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY –0.2 001 23 Input Characteristics –0.4 –0.6 –0.1 –0.3 –0.5 Input voltage Vcc-VI (V) Input Current II (mA) Ta=85°C Ta=25°C Ta=–40°C VCC=3V 4.0 00246 1 0 Driver Supply Characteristics 8.0 12.0 16.0 20.0 Supply voltage Vcc (V) Supply Current Icc (mA) Ta=25°C Ta=–40°C Ta=85°C VI=0.5V