M63817FP

M63817P MITSUBISHI | Alldatasheet

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Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. Unit: Ω The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. INPUT OUTPUT GND 10.5k 10k COM Package type 18P4G(P) 20P2N-A(FP) Package type 20P2E-A(KP) IN7→ 7 12 IN5→ 5 14 INPUT OUTPUT IN4→ 4 15 IN3→ 3 IN2→ 2 17 1IN1→ 18 IN6→ 61 3 → O1 → O2 → O3 → O4 → O5 → O6 → O7 IN8→ 8 11 GND 9 → O8 10 → COM COMMOM IN7→ 8 13 IN5→ 6 15 INPUT OUTPUT IN4→ 5 16 IN3→ 4 IN2→ IN1→ IN6→ 7 14 3 18 → O1 → O2 → O3 → O4 → O5 → O6 → O7 IN8→ 9 12 GND 10 → O8 2 19 1 20 NCNC → COM COMMOM NC : No connection MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE PIN CONFIGURATIONDESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transis- tors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

FEATURES

l Three package configurations (P, FP, and KP) l Medium breakdown voltage (BVCEO ‡ 35V) l Synchronizing current (IC(max) = 300mA) l With clamping diodes l Low output saturation voltage l Wide operating temperature range (Ta = –40 to +85°C) APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals FUNCTION The M63817P/FP/KP each have eight circuits consisting of NPN transistor. A spike-killer clamping diode is provided be- tween each output pin (collector) and COM pin. The transis- tor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maxi- mum of 35V voltage can be applied between the collector and emitter. CIRCUIT DIAGRAM

Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. M63817P M63817FP M63817KP MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% Duty Cycle no more than 100% RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C) V (BR) CEO VIN(on) VF IR hFE V V V mA 7.5 11.0 1.2 0.2 0.8 15.0 2.0 Symbol UnitParameter Test conditions Limits min typ max V Collector-emitter breakdown voltage “On” input voltage Clamping diode forward volltage Clamping diode reverse current DC amplification factor ICEO = 10mA IIN = 1mA, IC = 10mA IIN = 2mA, IC = 150mA IIN = 1mA, IC = 10mA IF = 250mA VR = 35V VCE = 10V, IC = 10mA VCE(sat) Collector-emitter saturation voltage ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) VO V0 250 170 250 130 250 100 Symbol UnitParameter T est conditions Limits min typ max Output voltage mA V IC VIN Input voltage Collector current (Current per 1 cir- cuit when 8 circuits are coming on si- multaneously) M63817P M63817FP M63817KP ns ns 120 240 Symbol UnitParameter T est conditions Limits min typ max Turn-on time Turn-off time ton toff C L = 15pF (note 1) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature V mA V mA V W –0.5 ~ +35 300 –0.5 ~ +35 300 1.79 1.10 0.68 –40 ~ +85 –55 ~ +125 RatingsSymbol Parameter Conditions Unit ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C) Output, H Current per circuit output, L V CEO IC V I IF V R P d Topr Tstg T a = 25°C, when mounted on board

Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. ton toff 50%50% 50%50% INPUT OUTPUT (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω , VIH = 11V (2)Input-output conditions : RL = 220Ω , Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes PG 50Ω R L OUTPUT INPUT Vo C L OPEN Measured device MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS TIMING DIAGRAMNOTE 1 TEST CIRCUIT Thermal Derating Factor Characteristics Ambient temperature Ta (°C) Power dissipation Pd (W) Input Characteristics Input voltage VI (V) Input current II (mA) Duty Cycle-Collector Characteristics (M63817P) Duty cycle (%) Collector current Ic (mA) Duty Cycle-Collector Characteristics (M63817P) Duty cycle (%) Collector current Ic (mA) 2.0 1.5 1.0 0.5 25 50 75 100 85 0 10020 40 60 80 400 300 200 100 1~5 400 300 200 100 00 10020 40 60 80 1~3 0.931 0.572 0.354 03 0 252015105 M63817P M63817FP M63817KP Ta = 25°C Ta = –40°C Ta = 85°C

• The collector current values represent the current per circuit.
• Repeated frequency ‡ 10Hz
• The value the circle represents the value of the simultaneously-operated circuit.
• Ta = 25°C
• The collector current values represent the current per circuit.
• Repeated frequency ‡ 10Hz
• The value the circle represents the value of the simultaneously-operated circuit.
• Ta = 85°C

Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63817FP) Duty cycle (%) Collector current Ic (mA) Duty Cycle-Collector Characteristics (M63817FP) Duty Cycle-Collector Characteristics (M63817KP) Duty cycle (%) Collector current Ic (mA) 400 300 200 100 00 10020 40 60 80 1~3 400 300 200 100 0 0 10020 40 60 80 678 Output Saturation Voltage Collector Current Characteristics Output saturation voltage VCE(sat) (V) Collector current Ic (mA) Output Saturation Voltage Collector Current Characteristics Output saturation voltage VCE(sat) (V) Collector current Ic (mA) 250 200 150 100 0 0.2 0.4 0.6 0.8 100 0 0.05 0.10 0.15 0.20 Duty Cycle-Collector Characteristics (M63817KP) Duty cycle (%) Collector current Ic (mA) Duty cycle (%) Collector current Ic (mA) 400 300 200 100 00 10020 40 60 80 1~2 400 300 200 100 0 0 10020 40 60 80 678

• The collector current values represent the current per circuit.
• Repeated frequency ‡ 10Hz
• The value the circle represents the value of the simultaneously-operated circuit.
• Ta = 25°C
• The collector current values represent the current per circuit.
• Repeated frequency ‡ 10Hz
• The value the circle represents the value of the simultaneously-operated circuit.
• Ta = 85°C
• The collector current values represent the current per circuit.
• Repeated frequency ‡ 10Hz
• The value the circle represents the value of the simultaneously-operated circuit.
• Ta = 25°C
• The collector current values represent the current per circuit.
• Repeated frequency ‡ 10Hz
• The value the circle represents the value of the simultaneously-operated circuit.
• Ta = 85°C Ta = 25°C IB = 3mA IB = 2mA IB = 1.5mA IB = 1mA IB = 0.5mA Ta = 25°C VI = 28V VI = 24V VI = 20V VI = 8V VI = 12V VI = 16V

Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer Characteristics Input voltage VI (V) Collector current Ic (mA) Grounded Emitter Transfer Characteristics Input voltage VI (V) Collector current Ic (mA) Clamping Diode Characteristics Forward bias voltage VF (V) Forward bisa current IF (mA) 250 200 150 100 250 200 150 100 Output Saturation Voltage Collector Current Characteristics Output saturation voltage VCE(sat) (V) Collector current Ic (mA) DC Amplification Factor Collector Current Characteristics Collector current Ic (mA) DC amplification factor hFE 100 0 0 0.05 0.10 0.15 0.20 100 101 102101 102 103 23 5 7 235 7 10323 5 7 048 1 2 1 6 2 0 II = 2mA Ta = –40°C Ta = 25°C Ta = 85°C Ta = 25°C VCE 10V VCE = 4V Ta = 85°C Ta = –40°C Ta = 25°C VCE = 4V Ta = 85°C Ta = 25°C Ta = –40°C Ta = 85°C Ta = 25°C Ta = –40°C