M63800FP MITSUBISHI | Alldatasheet

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Aug. 1999 PIN CONFIGURATION MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63800FP 7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

M63800FP is a seven-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN tran- sistors. This semiconductor integrated circuit performs high- current driving with extremely low input-current supply.

FEATURES

  • High breakdown voltage (BVCEO ≥ 50V)
  • High-current driving (Io(max) = –500mA)
  • With output clamping diodes
  • Driving available with CMOS IC output of 6-16V or with TTL output
  • Wide operating temperature range (Ta = –20 to +75°C)
  • Output current-sourcing type APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic sys- tems and relays, solenoids, or small motors FUNCTION The M63800FP has seven circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A spike-killer clamping diode is provided between each output pin and GND. V S (pin 8) and GND (pin 9) are used commonly among the eight circuits. The input has resistance of 3kΩ , and a maximum of 10V can be applied. The output current is 500mA maximum. Supply voltage VS is 50V maximum. The M63800FP is enclosed in a molded small flat package, enabling space-saving design. CIRCUIT DIAGRAM –0.5 ~ +50 –0.5 ~ +10 –500 –500 1.00 –20 ~ +75 –55 ~ +125 # : Unused I/O pins must be connected to GND. ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, T a = –20 ~ +75°C) VCEO # VS VI IO IF VR # Pd Topr Tstg RatingsSymbol Parameter Conditions Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Output, L Current per circuit output, H T a = 25°C, when mounted on board 1.5K 7.2K 20K VS GND INPUT OUTPUT The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω The seven circuits share the VS and GND. 1IN1→ IN2→ IN3→ IN4→ IN5→ IN6→ IN7→ GNDVS → O7 → O6 → O5 → O4 → O3 → O2 → O1  INPUT OUTPUT Package type 16P2N-A V V V mA mA V W Unit

Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63800FP 7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C) IS (leak) # IS VF IR # 2.4 V V V 0.2 IO –350 –100 mA VCE (sat) II 100 2.4 2.0 1.0 5.0 15.0 –2.4 100 VS = 50V, VI = 0.2V VS = 10V, VI = 2.4V, IO = –350mA VS = 10V, VI = 2.4V, IO = –100mA VI = 3V VI = 10V VS = 50V, VI = 3V (all input) IF = –350mA VR = 50V Symbol UnitParameter Test conditions Limits min typ + max 1.6 1.45 0.6 2.9 5.6 –1.2 + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. # : Unused I/O pins must be connected to GND. µA mA V µA V mA VS VIH VIL min typ maxParameter LimitsSymbol Unit Supply voltage Output current (Current per 1 cir- cuit when 7 circuits are coming on si- multaneously) “H” input voltage “L” input voltage Duty Cycle no more than 40% Duty Cycle no more than 7% ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C) Supply leak current Supply current Clamping diode forward voltage Clamping diode reverse current Collector-emitter saturation voltage Input current TIMING DIAGRAMNOTE 1 TEST CIRCUIT ns ns ton toff 100 4800 Symbol UnitParameter Test conditions Limits min typ max Turn-on time Turn-off time CL = 15pF (note 1) SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) ton 50% 50% 50% 50% toff INPUT OUTPUT PG 50Ω C LR L VSINPUT OUTPUT (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 0 to 2.4V (2) Input-output conditions : RL = 30Ω , VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Measured device

Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63800FP 7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics Ambient temperature Ta (°C) Power dissipation Pd (W) 0.5 1.0 1.5 2.0 25 50 75 100 VS = 10V VI = 2.4V Ta = 75°C Ta = 25°C Ta = –20°C Output Saturation Voltage Output Current Characteristics Output saturation voltage VCE (sat) (V) –400 –300 –200 –100 –500 Output current IO (mA) Duty-Cycle-Output Current Characteristics Duty cycle (%) –500 –400 –300 –200 –100 À ˆ ˘ ¯ 20 40 60 80 100 Output current IO (mA) Input voltage VI (V) –500 –400 –300 –200 –100 Output current IO (mA) Duty cycle (%) –500 –400 –300 –200 –100 À ˘ ¯ ˆ 20 40 60 80 100 Output current IO (mA) Forward bias voltage VF (V) 0 0.5 1.0 1.50 500 400 300 200 100 2.0 Forward bias current IF (mA) Duty-Cycle-Output Current Characteristics Grounded Emitter Transfer Characteristics Clamping Diode Characteristics VS = 20V VS-VO = 4V Ta = 75°C Ta = 25°C Ta = –20°C Ta = 75°C Ta = 25°C Ta = –20°C

  • The output current values represent the current per circuit.
  • Repeated frequency ≥ 10Hz
  • The value in the circle represents the value of the simultaneously-operated circuit.
  • Ta = 25°C
  • The output current values represent the current per circuit.
  • Repeated frequency ≥ 10Hz
  • The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C

Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63800FP 7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE Input Characteristics Input voltage VI (V) 0.4 0.2 0.6 0.8 1.0 0 12345 Input current II (mA) Input Characteristics Input voltage VI (V) 0 2468 1 0 Input current II (mA) VS = 20V Ta = 75°C Ta = 25°C Ta = –20°C VS = 20V Ta = 75°C Ta = 25°C Ta = –20°C