M62021L MITSUBISHI | Alldatasheet

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( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP

DESCRIPTION

The M62021 is a system IC that controls the memory backup function of SRAM and microcomputer (internal RAM). The IC outputs reset signals(RES/RES) to a microcomputer at power-down and power failure.It also shifts the power supply to RAM from main to backup,outputs a signal (CS) that invokes standby mode,and alters RAM to backup circuit mode. The M62021 contains,in a single chip,power supply monitor and RAM backup functions needed for a microcomputer system,so that the IC makes it possible to construct a system easily and with fewer components compared with a conventional case that uses individual ICs and discrete components.

FEATURES

  • Built-in switch for selection between main power supply and backup power supply to RAM.
  • Small difference between input and output voltage (IOUT =80mA,V IN=5V)0.2V typ
  • Detection voltage (power supply monitor voltage)4.40V±0.2V
  • Chip select signal output(CS) Two channels of reset outputs(RES/RES)
  • Power on reset circuit built-in
  • Delay time variable by an external capacitance connected to Ct pin
  • Facilitates to form backup function with a few number of components BLOCK DIAGRAM APPLICATION Power supply control systems for memory backup of microcomputer system and SRAM boards with built-in backup function that require switching between external power supply and battery. PIN CONFIGURATION (TOP VIEW) Outline 8P5(L) Outline 8P4(P) 8P2S-A(FP) GND VIN RES GND RES VBAT VOUT Ct(DELAY CAPACITANCE) CS VOUT VBAT VIN Ct(DELAY CAPACITANCE) RES GND RES CS RESET CIRCUIT DELAY CIRCUIT7 SW Ct CS VBAT VOUTVIN RES RES Com 1.24V

( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP V mW /°C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted) Symbol Test conditions Limits Unit Parameter Min. Typ. Max. 4.4 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted) Symbol Ratings Unit Input voltage 7 Pd Topr Power dissipation -40 ~ +125 V Output current Operating temperature VIN Tstg Storage temperature -20 ~ +75 100 4.2Detection voltage 4.6 Parameter Conditions IOUT K Thermal derating (Ta≥25°C) 800(SIP)/625(DIP)/440(FP) mA mW mV100 0.25 mAICC Circuit current VDROP Difference between input and output voltage 0.125 7.5 2.0 4.0 12.0 Vs ΔVs Hysteresis voltage ΔVs=V SH -VSL IOUT =0mA V 8(SIP)/6.25(DIP)/4.4(FP) VIN(At the change from H L) 50 200 %/°C0.005Vs/ΔT Temperature coefficient of detection voltage VIN=4V VIN=5V VIN=5V IOUT =50mA IOUT =80mA 5.0 V4.5Ct output voltage (high level) 0.02 VOH (Ct) 0.1 0.05 VOL (Ct) VOH (RES) Ct output voltage (low level) RES output voltage (high level) VIN=5V(Note1) VIN=4V(Note1) VIN=5V(Note1) 5.04.5 VRES output voltage (low level)VOL (RES) VIN=4V VOH (CS) VOL (CS) IR VF tpd td VOPL (RES) CS output voltage (high level) CS output voltage (low level) VIN=5V VIN=4V VIN=0V,VBAT =3V VBAT =3V VIN=5V VIN=0V (Note1) Backup Di leak current Backup Di forward direction voltage Delay time Response time RES limit voltage of operation IF=10µA VIN=0V 5V,Ct=4.7µF VIN=5V 4V (Note 3) (Note2) (Note2) ISINK=1mA V µA V V ms µs V 0.02 0.05 2.40 2.47 0.08 0.1 0.3 4.0VOH (RES) RES output voltage (high level) VIN=4V(Note1) VRES output voltage (low level)VOL (RES) VIN=5V 0.02 0.2 0.4 3.5 0.2 0.2 3.50 3.57 ±0.5 ±0.5 0.54 0.6 10 27 55 5.0 25.0 0.65 Note 1.Regarding conditions to measure VOH and VOL ,voltage values are to be generated by internal resistance only and no external resistor is used. 2.These values are produced inserting an external resistor,RCS=1MΩ ,between the CS pin and GND. 3.With no external resistor (10kΩ internal resistance only) V V V (Note1) ISINK=1mA (Note1) ISINK=1mA

( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP GND RESET CIRCUIT DELAY CIRCUIT RES RES Com 1.24V TEST CIRCUIT M62021 V A V A V VCRT SW5 SW6 SW7 IF1 Vm4SW4 SW3 4.7µ Vm3IF2 VOUT VBAT CS Ct Im2 2 3 Vm2 VIN SW2 Im1 SWITCH MATRIX Symbol Parameter V1 V2 IF1 IF2 S W 1 2 3 4 5 6 7 Measuring instrument Icc Vs (VSL) VDROP VOH (Ct) VOL (Ct) VOH (RES) VOL (RES) VOH (RES) VOL (RES) VOH (CS) VOL (CS) IR VF tpd td Circuit current Detection voltage (VIN negative-going) Difference between input and output voltage Ct output voltage(high level) Ct output voltage(low level) RES output voltage(high level) RES output voltage(low level) RES output voltage(high level) RES output voltage(low level) CS output voltage(high level)(Note 4) CS output voltage(low level) Backup Di leak current Backup Di forward direction voltage Delay time Response time VOUT CS Ct RES RES Decrease from -50mA -80mA 1mA 1mA 1mA 10µA (Note6) ON ON ON ON ON ON ON ON ON ON ON (Note7) OFF OFF OFF OFF OFF OFF OFF OFF OFF 3 ON OFF OFF OFF OFF OFF OFF OFF OFF OFF VOUT CS RES RES Im1 (Note5) Vm4 CRT Vm1 Vm2 Vm4 Vm4 Vm4 Vm4 Im2 Vm3 CRT Notes 4.To measure VOH (CS),insert a 1MΩ resistor between the CS pin and GND. 5. While monitoring each output by Vm4 or CRT,measure the input voltage Vm1 when the output goes from H to L and L to H.Regarding VSH ,raise VIN from 4V and measure the input voltage Vm1 when the output goes from H to L and L to H.ΔVs is VSH -VSL. 6. To measure delay time, change VIN from 0V to 5V and compare,with respect to each pin,the positive-going edge observed on a monitor with that of VIN.To measure response time,change VIN from 5V to 4V and compare,with respect to each pin,the negative-going edge observed on a monitor with that of VIN. 7.Set the switch to OFF when measuring response time. SW1 1 2 Vm1

( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP Pin No. Symbol Name Function

1 VOUT Power supply output

VIN and VBAT are controlled by means of an internal switch and output through VOUT The pin is capable of outputting up to 100mA.Use it as VDD of CMOS RAM and the like

2 VBAT Backup power supply inputBackup power supply is connected to this pin

If a lithium battery is used,insert a resistor in series for safety purposes 3 VIN Power supply input +5V input pin.Connect to a logic power supply. 4 Ct Delay capacitor connection pinA delay capacitor is connected to this pin.By connecting a capacitor,it is possible to delay each output RES GND RES CS Positive reset output Ground Negative reset output Chip select output Reference for all signals Connect to the positive reset input of a microcomputer.The pin is capable of flowing 1mA sink current Connect to the negative reset input of a microcomputer.The pin is capable of flowing 1mA sink current Connect to the chip select of RAM.The CS output is at low level in normal state thereby letting RAM be active.Under failure or backup condition,the CS output is set to high level,then RAM enters standby state disabling read/write function.The pin is capable of flowing a 1mA sink current EXPLANATION OF TERMINALS APPLICATION EXAMPLE GND RESET CIRCUIT DELAY CIRCUIT RES RES Com 1.24V M62021 VOUT VBAT CS Ct VIN CPU CMOS RAM VDD VIN CONT BATTERY C IN VDD +5V (MAIN POWER SUPPLY) *Capacitance to be connected:CIN:10µF;COUT :4.7µF;Ct:4.7µF *If connecting a zener diode,select one of VZ=2~3V

( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP CONFIGURATION <Power supply detector> The internal reference voltage Vref is compared by means of a comparator with resistor-divided voltage VR(resistor-divided voltage produced by R1 and R2 from VIN). If the input voltage is 5V,VR is set to 1.24V or higher,so the comparator output is at low level and the Ct output(Q1 collector output)is set to high level.If the input voltage drops to below 4.4V in an abnormal condition,VR becomes below 1.24V,so the comparator output goes from low to high level and the Ct output,from high to low.The input voltage at this point is called VSL.Next,when the input voltage,restored from abnormal state,has a rise,the comparator output goes from high to low level and the Ct output,from low to high. The comparator used for detection has 100mV hysteresis(ΔVs),so that malfunctioning is prevented in case that the input voltage slowly drops or VR nearly equals Vref. <Delay Circuit> Connecting an external capacitor to the Ct pin lets RES,RES,CS,and VOUT be delayed due to RC transient phenomenon(electric charge). Delay time is determined as follows. Delay time(tpd)= Ct X (R3 + R4) X In[VOH(Ct)-INV1(VTH)] [VOH(Ct)-VOL(Ct)] =Ct X 22kΩ X 0.2614 =5.75 X 10 X Ct *Ct is an external capacitance... Taking into consideration the time taken by the oscillator of microcomputer to be stable,connect a 4.7µF capacitor to the Ct pin. (As the response time of detection can be slowed due to internal structure depending on the rising rate of power supply,avoid connecting a too large capacitance. <Schmitt trigger circuit> Since waveforms show a gentle rise due to the RC delay circuit,INV1,INV2,R5,and R6 constitute a schmitt trigger circuit to produce hysteresis so as to prevent each output from chattering. INTERNAL CIRCUIT INPUT VOLTAGE V IN(V) VSL VSH ΔVs tpd VOH (Ct) INV1(Vth) VOL (Ct) DELAYED OUTPUT WAVEFORMS OF Ct 7534 Ct VIN RES RES VOUT VBAT CS GND 60.94k Com INV8 INV9 INV3 INV4 INV5 INV6 INV7 R4 R5 R6R3 R105k 22k R7 R8 24K Vref 1.24V 22k 47 10k INV1 INV2 10k 10k 800 R10 R11 10kQ2

( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP Input voltage Output pin In normal operation VOUT RES RES CS In failure(instantaneous drop) Input voltage:5V With Q4 set to ON, a voltage (VIN-VDROP )is output The output level is VOL (RES) with a logic low The output level is VOH (RES) with a logic low The output level is VOL (CS) with a logic low Input voltage:5V 4V Each output varies if the input voltage drops to VSL or under Q4 is turned OFF.A voltage (VIN-Q4 VEB(Di) is output by the diode between E and B of As the state shifts from a logic low to logic high,the output level becomes approximately equal to the input voltage As the state shifts from a logic high to logic low,the output level becomes VOL (RES) As the state shifts from a logic low to logic high,the output level becomes the voltage VIN- Q4 EB (Di). Restoration from failure (instantaneous drop) Input voltage:4V 5V If the input voltage goes higher than VSL by 100mV,each out-put varies after delay produced by the delay circuit Q4 is turned ON after delay and a voltage(VIN-VDROP ) is output A logic high is maintained,and than shifts to a logic high A logic low is held,and than shifts to a logic high A logic high is maintained,and than shifts to a logic high In backup state Input voltage:0V Backup voltage:3V VBAT -VF The output is a logic high and the output level is VBAT -VF TIMING CHART VIN VOUT RES RES tpd tpd CS ΔVs VSH VSL V2V3 V4V5 VOL (CS) VIN(VSL) VOL (RES) VOL (RES) VIN(VSL) VOL (RES) V1=V IN-VDROP V2=V IN-Q4VEB (Di) V3=V IN(VSL)-VDROP V4=V IN(VSL)-Q4VEB (Di) V5=V BAT -VF

( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP TYPICAL CHARACTERISTICS THERMAL DERATING (MAXIMUM RATING) 200 400 600 800 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta(°C) 1000 DETECTION VOLTAGE VS. AMBIENT TEMPERATURE -40 0 20 40 80 100 AMBIENT TEMPERATURE Ta(°C) INTERRUPTION OUTPUT VOLTAGE VS. SUPPLY VOLTAGE 100 110 CIRCUIT CURRENT VS. AMBIENT TEMPERATURE CIRCUIT CURRENT VS. INPUT VOLTAGE 0 1 2 3 4 INPUT VOLTAGE Vcc(V) 5 6 7 8 -20 60 120 4.48 4.46 4.44 4.42 4.40 4.38 4.36 4.34 4.32 120 130 140 -40 0 20 40 80 100 AMBIENT TEMPERATURE Ta(°C) -20 60 120 -40 0 20 40 80 100 AMBIENT TEMPERATURE Ta(°C) -20 60 120 -40 0 20 40 80 100 AMBIENT TEMPERATURE Ta(°C) -20 60 120 CIRCUIT CURRENT VS. AMBIENT TEMPERATURE 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VIN=4VVIN=5V M62021L M62021P M62021FP

( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP OUTPUT CURRENT VS. DIFFERENCE BETWEEN INPUT AND OUTPUT VOLTAGES DIFFERENCE BETWEEN INPUT AND OUTPUT VOLTAGES V DROP (mV) DIFFERENCE BETWEEN INPUT AND OUTPUT VOLTAGES VS. AMBIENT TEMPERATURE AMBIENT TEMPERATURE Ta(°C) BACKUP Di FORWARD DIRECTION VOLTAGE VF(V) RES"L"OUTPUT VOLTAGE VS. AMBIENT TEMPERATURE -40 -20 0 20 40 60 80 100 BACKUP Di FORWARD DIRECTION CURRENT VS. VOLTAGE 0 50 100 150 200 100 250 120 400 350 300 250 200 150 100 AMBIENT TEMPERATURE Ta(°C) -40 -20 0 20 40 60 80 100 120 BACKUP Di FORWARD DIRECTION VOLTAGE VS. AMBIENT TEMPERATURE 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 AMBIENT TEMPERATURE Ta(°C) -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta(°C) -40 -20 0 20 40 60 80 100 120 0.8 100 120 140 160 RES "L"OUTPUT VOLTAGE VS. AMBIENT TEMPERATURE VIN=5V IOUT =100mA IOUT =80mA IOUT =50mA VIN=5V IF=100µA IF=10µA IF=1µA VIN=4V ISINK=1mA VIN=5V ISINK=1mA

( / 9 )ELECTRIC MITSUBISHI M62021L,P,FP MITSUBISHI<Dig.Ana.INTERFACE> SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP CS"L"OUTPUT VOLTAGE VS. AMBIENT TEMPERATURE AMBIENT TEMPERATURE Ta(°C) -40 -20 0 20 40 60 80 100 120 100 120 140 160 VIN=5V ISINK=1mA CS"L"OUTPUT VOLTAGE VS. AMBIENT TEMPERATURE AMBIENT TEMPERATURE Ta(°C) -40 -20 0 20 40 60 80 100 120 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 2.4 VIN=4V R CS =1M Ω DELAY TIME VS.EXTERNAL CAPACITANCE CONNECTED TO THE Ct PIN VIN=0V 5V VIN=0V 5V Ct=4.7µA DELAY TIME VS.AMBIENT TEMPERATURE AMBIENT TEMPERATURE Ta(°C) -40 -20 0 20 40 60 80 100 1200 EXTERNAL CAPACITANCE CONNECTED TO THE Ct PIN Ct(µF) 0.1 1 10 1000 100 1000 2 3 75 2 3 75 2 3 75