M5L27128K MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

ail MS5L27128K, -2 ANY NY Ny) Wi 131 072-BIT(16384-WORD BY 8-BIT) yt ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

DESCRIPTION

PIN CONFIGURATION (TOP VIEW! The Mitsubishi MBL27128K is 3 high-speed 131072-bit ) ultraviolet erasable and electrically reprogrammable read only memory. It is suitable for microprocessor programming ap wv.zvives Of LB veot sv) plications where rapid turn-around is required. The a [aa Prax proceam M5L27128K is fabricated by N-channel double polysilicon gate » -G Far technology and is available in a 28-pin DIL package with a 4s =(] BI 45 ADDRESS transparent lid. a, =G] B9- As Pivpurs soos? “# “EP BB Aiea FEATURES mous) As OB Be OF nate nur © 16384 word x 8 bit organization 8) GE] Se a voaooness inrur © Access time MBL27128K-2 200ns (max.) oe Cl MS5L27128K 250ns (max.) ~ -@ f+ 0 SE Te Oo | - © Two line control OE, CE o Fae Oe Le eure . oatampurs:| 01 =] A 0. © Low power current (lec): ACtiVE sesssssesesss+ 100MA Imax.) | PAA oureuts > lo +a fae 0. Standby... 45mA (max.) vom Bo © Singte-§V power supply © 3.State dutput buffer 6 © Input and output TTL-compatible in read and program tutline 28K4 mode © Standard 28-pin DIL package © Fast programming algorithm @ Interchangeable with INTEL 27128 APPLICATION @ Microcomputer systems and peripheral equipment BLOCK DIAGRAM . ie | An | 412) i 4 ‘072 81Ts | Ba Poon cet maraix | Ae G+] ADDRESS INPUTS 4 As Ge | a ® Aro) a : Ar ODER ec 20 © | cue enagie Input TE @ HIP ENABLE OUTPUT SENSE output enasce nour OE @———a] OutPUT Haste AND aon AND spur 5 ven’ sv.21v) O ondiov) @ | $= —— OR 398UBY J 000 10204040s040y, 200 2204030601, DATA INPUTS/OUTPUTS @ MITSUBISHI . 6-10 ELECTRIC

MITSUBISHI LSis. MSL27 128K, -2 131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM FUNCTION (Conventional programming algorithm) Read The device enters the programming mode when 21V is sup- Set the CE and OE terminals to the read mode (low level). Plied to the Vep power supply input and CE is at low level. A Low level input to CE and OE and address signals to the ad- _ location is designated by address signals (A, ~A,,), and the dress inputs (Ay~Ay3) make the data contents of the — data to be programmed must be applied at 8-bits in parallel to designated address location available at the data input/output _the data inputs (Dy ~D;). A program pulse to the PGM at this (Dp, ~ D,). When the CE or OE signal is high, data input/output _ state will effect programming. Only one programming pulse is are in a floating state. required, but its width must satisfy the condition 45 When the CE signal is high, the device is in the standby MS< tpy <55 ms. mode or power-down mode. Erase Programming Erase is effected by exposure to ultraviolet fight with a (Fast programming algorithm) wavelength of 2537A at an intensity of appoximately First set Vcc = 6V, Vpp =21V and then set an address to first 15WS/cm?. Sunlight and fluorescent light may contain address to be programmed. After applying 1 ms program ultraviolet light sufficient to erase the programmed informa- pulse (PGM) to the address, verify is performed. If the output tion. For any operation in the read mode, the transparent lid data of that address is not verified correctly, apply one more 1__ should be covered with opaque tape. ms program pulse. The programmer continues 1 ms pulse- then-verify routines until the device verify correctly or fifteen of these pulse-then-verify routines have been completed. The programmer also maintains its total number of 1 ms pulses ap: plied to that address in register X. And then applied a program pulse 4 times of register X value long as an overprogram pulse. When the programming procedure above is finished, step to the next address and repeat this procedure till last address to be programmed. (See P.6-15) MODE SELECTION Moe CE (20) OE (22) PEM (27) Vee(1) voot2e) (4, ONE gy Read . vi vu : Vi : Veo Veo | _—_ Data out Standby Vin x* x* veo | Vee Floating Program | Vie vin Vie T Vee Voc. | Datain Program verity : Vie : MS Vw : vem; vec.) atacout Program inhibit Vin x* x* Vee ‘ Veo Floating #1: Kean be either Vi OF Vin ABSOLUTE MAXIMUM RATINGS ‘Note 1) Symbol Parameter Us Unit “Tope | Temperature under bias . - 10~ 80 c Torq | Storage temperature ‘ = 65° 125 c vin | _Allinput or output votage "2 . 06-7 iY vie \\Vpp Supply voltage during programming "2 ~0.6~26.5 v Note 1 Stresses above those listed may cause permanent damage tO the device This wa stress rating only and functional operation of the device at these or at any other conditions above those indicated in the operational sections of ths specification is not implied. Exposure to absolute maximum rating Conditions for extended periods attects device reiabiity 2) With respect 10 Grounds ate MITSUBISHI ELECTRIC 6-11

MS5L27 128K, -2 131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM READ OPERATION DC ELECTRICAL CHARACTERISTICS (Te=0-~70°C. Vec=5V£5%. Vpp=Vec. unless otherwise noted T Units Symbol Parameter Test conditions _— _ min | Typ | Max tu Input load current Vin= 5.25V i wo] uA ko | Output watage curent Z Vour=5.25V | of wa | TE L von | oupurmon vonage | tom tome Tee Note 3 Typical values are at Ta=25°C and nominal supply voltages AC ELECTRICAL CHARACTERISTICS 'T2-0-70°C, vec=5V 5%. Vpp=Vcc, unless otherwise noted) Symbo! Parameter Test conditions M5L27120K-2 M5L27128K Unit Min Mow Min Mox Taiao) | _Addiess to output delay cE=08= Vi. 200 250 as ta(de) | CE to output delay OE=Vn 200 250 as tae) | Output enable to oviput delay Ce=vu 75 100 rs oF ‘Output enable high to output float CEavn ° 0 ° 3 ns Ton Output hoid trom CE or OE = 0E= Va ° fo |) ms | Note 4 Vc must be appled simultaneously or belore Vpp and removed simultaneously oF after Vep AC WAVEFORMS Test conditions for A.C. characteristics v input voltage. Vi =O 45V. Vi=2.4V " Input nse and fall tmes: =20ns- ‘ADDRESS. 4 ADDRESS VALID \\ fRelerence voltage a ung measurement: Inputs 1V and vu 2V Output 0.8V. and 2V vm Output load ITTL gate + C,11000F» ce vi 1 ia __'a (GE) ° 9 13v — Vin 1N914 oe | « = 1 or 3.3kQ taco) BAe Vou but rut \\ HIGH Z = 1000 OUTPUT oe INNNN SRL 7; 7 ue 1000 CAPACITANCE s ° Test conditions tems ~ bol rameter est condi - ot mm seme : [wa | tye | Ma Cn input capacitance (Adavess. CE. OF, POM? 4 6 oF |__| Input capacnance iAacress. CE. OE FEMI |. age 1 tz, Viz Vo =OV _ Cour Output capacitance , 8 12 oF

9 MITSUBISHI

MS5L27128K, -2 131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM PROGRAM OPERATION FAST PROGRAMMING ALGORITHM DC ELECTRICAL CHARACTERISTICS | (10~2525°C, vec 6V:40 25v. Vpp=21V£0.5V, vies otnerwse noted) wn [tv Re pe Output iow vokage Tous? 1mA fea |v | Hs eno ER ae a ec cs Tout igh age 20. | vee [ov Voc supply current 100 mA AC ELECTRICAL CHARACTERISTICS 1113-2525°C. Voc -6V40.25V, Vpp=21VE0SV, uniess otherwise noted) Symbol Parameter Test conditions } rs win | Tye | Max las, Agdiess setup ime | | | - as ‘tos Data setup time — | | 2] | [ws | Address hold ume TO 0 f [ws | Data hold ume | - ee Ouiput enable 0 output font dey a) [a0 [ons | Ver stun time { 2 ff as | Ve setup ime _ 2 ff ws | [ Trew | PORE nna! pogiom pile wath 035) 1 108 | ms | | toow | FaH over proaram pulse wth [as [ [a [om | Not 5° Veg must bo appied srmutaneousiy of before Vpp and removed simultaneously O afer Vor pe MiTsuBiSHI ELECTRIC 6-13

M5L27 128K, -2 131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM AC WAVEFORMS prone __veney Ee [Pe vee [71 fF . fs TT Veo Voot j— tyes } | i} | Voce : | x | Vie | toes | DE J MITSUBISHI 6-14 ELECTRIC

MSL27 128K, -2 131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM FAST PROGRAMMING ALGORITHM FLOW CHART x=0 <> <n No FAILURE LAST ADDRESS? wo ves Note 6) > NO FAILURE Yes Pass Note6. 4 75:sVoc=Veps8.25V

MSL27128K, -2 131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM CONVENTIONAL PROGRAMMING ALGORITHM DC ELECTRICAL CHARACTERISTICS (10~ 2525°C, vc =5v#5%. Vpp=21V£05V unless otharmse notes) ‘Symbol Parameter Test conditions: Lens ™ rameter condition: arvana Unit ma | | Me " tu Input current Vin = Vic oF Ving Vou | Gutbat tow votage foun? Ima Vw Input low voltage on Los] ov Vn | _taput high vottage 20 | 100 "ma Lies | vee Suppiv covert | oemvesrow Ta AC ELECTRICAL CHARACTERISTICS (10=2525°C, Vec=5v5%, Vpp=21V.£0 5V unlss otherwise noted) ] Omnis Symbot Parameter Test condwions —- | Uru | - Mn | tw | Max " Tas | Addeess set up ime 2 1 as tos Data setup tne OO fe tase ‘Address hold wre - mz Clo 4 tew PGM Pulse wdih (duiing program! [ss | ms | toes | Ce sewpwme us toe Data vaid trom OE rs Note 7 Veg must be applied simultaneously or before Vpp and removed smmutaneousiy o ater Vpp he MITSUBISHI 6-16 ELECTRIC

MITSUBISHI LSIs. MSL27 128K, -2 131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM AC WAVEFORMS Ver Lys | i i} & | 1 | i | PG _ . oe | Outouts08V and 2V

MS5L27128K, -2 131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM TYPICAL CHARACTERISTICS ACCESS TIME VS SUPPLY CURRENT VS OPERATING TEMPERATURE SUPPLY VOLTAGE Seeersees _ L_ pp tis ty | | Pe - aS => Z eft E er 5 po

2 EEE S [fd

OEE L_l SUPPLY CURRENT VS OPERATING TEMPERATURE OUTPUT CHARACTERISTICS a ocrosmy | ties rey . 7° = 2 hE Lee |] & 2 i CER eee ee Zs Pi] [7 [I Srp OF a Tf OR [J 25 50 5 100 oO 1 2 3 4 5 a