M57704M MITSUBISHI | Alldatasheet

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MITSUBISHI RF POWER MODULE 430-450MHz, 12.5V, 13W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 66+1 601 2-R2+0.2 $3 ha t LY Ws “ 4X] 4 = Le z [On| He a i ®loe 2 ® © EB @ co ™ YT Te | W015 “| asst 16.521 12+1 ho.5 +4 PIN @Vec! : 1st. OC SUPPLY Se @vVecz : 2nd. OC SUPPLY oi} 5241 +1 @vVecs : 3rd. DC SUPPLY s 9| | 2 ®Po RF OUTPUT a ®GNOD : FIN ‘Le lee ee al a ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) [icc | Total current Pintmand Zo= 2. = 502 [oa Tw Bona Ze=Ze=500 Toror) | Operation case temperature 50 to 1107 Tsig___| Storage temperature ST 0 t0 1107 Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) foe [ tee |e | | Pin = 0.2W a | Veo= 125 [35 2fo__| 2nd. harmonie Zo= 2 = 500 a 2 | Veo = 15.2V, . Po = 14W (Pin : controlled) No degradation ~ | Load VSWR tolerance Load VSHR=20:1(AIl phase), 2sec. | or destroy | Zo=50Q Note. Above parameters. ratings. limits and conditions are subject to change. ee Nov. "97

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MITSUBISHI RF POWER MODULE M57704M 430-450MHz, 12.5V, 13W, FM MOBILE RADIO RS OMH2, 12.5V, 131, FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER TOTAL EFFICIENCY OUTPUT POWER TOTAL EFFICIENCY INPUT VSWR VS. FREQUENCY VS. INPUT POWER 20 ry 20 100 SEeEe Toone s | {J — E a ee it | felt gs g HA . 5 8 Pats & abprreatasted lao & L | Z ES z 2 f ab = S 5 8 | - { p05 5 HH i og ame Pte PeZ ere tliTTTTty iy : tA || tit ts |, FREQUENCY f (MHz) INPUT POWER Pi (W) OUTPUT POWER VS. DC SUPPLY OUTPUT POWER VS. 1st AND 2nd VOLTAGE VOLTAGE 100, = nape aw A Wega [2S RA in, aa | Ze : Z| 2 EOS EES & DZ 8 7 et ha © AA em © AZ es

8 Aaa | 3 Aa

8 10 12 4 16 18 4 6 8 10 12 14 DC SUPPLY VOLTAGE Voc (V) Ist AND 2nd VOLTAGE Vec)=Vece (V) INPUT IMPEDANCE OUTPUT IMPEDANCE Veon128V oz t Qe wat 06h \\ Stow, L/) 0.6 oof LY om ‘aaganirie\\\\ 9 5 i fs Pout Nie en oe aniin \\| / EE aie {| / / S82 0-asomnz, a_i 7% 5.0 py 10 5.0 NOV. "97

MITSUBISHI RF POWER MODULE M57704M 430-450MHz, 12.5V, 13W, FM MOBILE RADIO OE eee DESIGN CONSIDERATION OF HEAT RADIA- 2. Heat sink design TION In thermal design of heat sink, try to keep to package Please refer to following consideration when designing heat temperature at the upper limit of the operating ambient sink. temperature (normally T, = 60°C) and at the output power of 13W below 90°C. 1, Junction temperature of incorporated transis- The thermal resistance Ren(c_»)7) of the heat sink to real- tors at standard operation. ize this: (1) Thermal resistance between junction and package of Te-Ts 90 - 60 incorporated transistors. Renle-s) = Tp opg +P, (13/035) 213402 a) First stage transistor =1.2(°CW) Ren (jer = 18°C/W (Typ.) Note 7: Inclusive of the contact thermal resistance be- b) Second stage transistor tween device and heat sink Run (j-c)2 = 6°C/W (Typ.) Mounting the heat sink of the above thermal resistance on c) Final stage transistor the device, Ren (j-c)a = 2.5°C/W (Typ.) Ti = 117°C, Tig = 119°C, Tig = 136°C at T)3 = 135°C (2) Junction temperature of incorporated transistors at at Ta = 60°C, To = 90°C. standard operation. In the annual average of ambinet temperature is 30°C, © Conditions for standard operation. Tis = 87°C, Ti = 89°C, Ty = 108°C, Po = 13W, Vec = 12.5V, Pin = 0.2W, nr = 35% (mini as the maximum junction temperature of these incorpo- mum rating), Pox ‘Now 0) = 1.5W, Po2'?) = 6W, Ir = rated transistors Timax are 175°C, application under fully Note 1: Output power of the first stage transistor Note 2: Output power of the second stage transistor Note 3: Circuit current of the first stage transistor Note 4: Circuit current of the second stage transistor Note 5: Circuit current of the final stage transistor © Junction temperature of the first stage transistor Tin = (Vee X Irr = Por + Pin) X Renij—err + Te =27+T. (°C) Note 6: Package temperature of device @ Junction temperature of the second stage transistor Ti2 = (Voc X It2 ~ Po2 + Pot X Renij-cr2 + Te =29+Te. (°C) @ Junction temperature of the final stage transistor Tis = (Vee x Ira ~ Po + Poa) x Rinij-a) + Te = 45 +T. (°C) aT MITSUBISHI ees