M57161L-01 MITSUBISHI | Alldatasheet

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Mar. 2002 OUTLINE DRAWING MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT BLOCK DIAGRAM

DESCRIPTION

M57161L-01 is a hybrid IC designed to drive trench- gate IGBT module with built in RTC. This device can operate by an input of +15V because of electrical isolation between the input and output by an opto coupler,and the built in DC-DC converter isolated between a pair of positive/negative outputs for gate driving. With built in protection circuits,this devices can maintain a reverse bias for a predetermined time after the detec- tion of an over current(short circuit). Therefore,the pro- tective system operates with a margin of time. The over current(short circuit) detector functions with RTC circuit built in IGBT module to detect a drop of gate voltage. Recommend module ; IGBT module (F)series

FEATURES

G Built in insulated DC-DC converter for IGBT drive G Built in short circuit protection circuit G Electrical isolation between input and output with opto-coupler (Vios=2500Vrms for 1minute) APPLICATION To drive IGBT module for inverter or AC servo systems application Dimentions : mm 83.0max 4.5max 11.0max 15.0max5.5max 6.0max 2.54×28=71.12 30.0max Error out VEE

27 Error

18 GND

DC–AC Interface converter Opto-coupler 390Ω VD VIN

Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT V V MA kHz Ω mA V V V V µs µs µs µs ms mA µs µs V V 14.3 4.5 2.2 17.0 –5.5 –4.0 1.5 14.2 11.0 15.0 5.0 17.4 –6.5 15.5 –5.0 0.4 0.4 1.3 0.4 3.5 6.5 15.2 11.6 15.7 5.5 17.8 –7.5 16.5 –6.0 0.5 2.0 0.5 2.5 16.2 12.2 Symbol UnitParameter Test conditions Limits Min. Typ. Max. Recommended range Recommended range Recommended range Recommended range Recommended range V IN=5V VIN=0V, f=0Hz VIN=0V, f=0Hz IIH=10mA IIH=10mA IIH=10mA IIH=10mA Between start and cancel(Under input signal “L”) Applied 27pin R=470Ω In the rise time 29pin :11V, 28pin :open In the rise time 29pin :11V, 28pin :open The required minimum of positive power supply for gate when Vo is in the state of “H ” VD VIN IIH f R G IIH VCC VEE VOH VOL t PLH t r t PHL t f t timer IFO t c t d VCL VSC Supply voltage Pull-up voltage on input side “H ” Input current Switching frequency Gate resistor “H ” Input current Gate + supply voltage Gate - supply voltage “H ” Output voltage “L” Output voltage “L-H” Propagation time “L-H” Rise time “H-L” Propagation time “H-L” Fall time Timer Fault output current Controlled time detect delay time Short-circuit protect delay time Start voltage for protection at lower VCC Over-current detect voltage ELECTRICAL CHARACTERISTICS (Ta = 25°C, VD = 15.0V, VIN = 5.0V, f = 20kHz, RG = 2.2Ω : CM600HU-24F) ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, Ta = 25°C) V V V A A Vrms mA V –1 ~ +7 16.5 2500 –20 ~ +60 –25 ~ +100 V CC RatingsSymbol Parameter Conditions Units Supply voltage Input voltages Output voltages Output current Isolation voltage Case temperature Operating temperature Storage temperature Fault output current Applied 29 pin V D VI Vo IOHP IOLP Viso Tc Topr Tstg I FO VR Applied between:5-6 At the output voltage “H ” VD =15.7V Pulse width 1µs, f≤20kHz Sine-wave voltage 60Hz, 1min Input current 27pin

Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT APPLICATION CIRCUIT EXAMPLE 1 (Direct driving) APPLICATION CIRCUIT EXAMPLE 2 (Additional transistor for output current) VIN M57161L -01 VD Control signal→ VD =15V±5% VIN=5V±5% R G Ctrip RTC28 470Ω 3.3kΩ CM600HU-24F R G ≥ 2.2Ω Ctrip : Please refer to the next page 470µF 470µF 2.2µF VIN M57161L -01 Control signal→ VD =15V±5% VIN=5V±5% Ctrip Co 470Ω 3.3Ω

24 Ctrip : Please refer to the

(Parallel connection) Ro hfe×R G /2 R G VD RTC Ro RTC 4.7kΩ R G Co – Co+ The maximum switching frequency in this example : 10kHz Co+, Co- : More than 1000µF (please use an electrolytic capacitor with ripple current admissible for output peak current) Co : A few µF The connection to decrease the peak of ripple current

Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT 1. The VGE error detect circuit operates when an input signal is in the state of “H ”. 2. An error judgment is made when VGE becomes below VSC (=11v : min). 3. The VGE error detect circuit does not function until the time when the gate voltage reaches VSC (=12.2V : max). The tc (=3.5µs) of controlled time detect short circuit is set in order to ensure the turn-on of IGBT modules. 4. If a rise time of gate voltage is longer than 3.5µs, the tc can be adjusted by connecting a capacitor (Ctrip) between pins 28 and 18. Please refer to td vs. Ctrip CHARACTERISTICS on page 6/6. 5. The td is a delay time due to signal transmission of each protection circuit. 6. If short-circuit current flows at turn-on, the controlled time detect short cir- cuit (td) is included to the td of short-circuit protect delay time. The td can be changed through Ctrip. As a gate shutdown of IGBT modules within 10 µs is recommended, Ctrip should be below 220pF in order to set the maximum of td below 10µs OPERATION OF PROTECTION CIRCUIT FLOW CHART Start Detecting of short circuit Gate shutdown Operate timer start Output error sign End of timer Input sign = “L” Reset Ye s Ye s N o No Error out VCC VEE Timer circuit 18GND Interface R G 470Ω 330µ 330µF 3.3k VGE detect RTC

Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT Timing chart when protection circuit operates under over-current (short circuit) with power supply applied. DESCRIPTION OF TIMING CHART (1) When VCC is within 10 to 15 voltages, S/C detect output (VFO ) is in the low state. The output vontage remains in the low state for 3 to 6 ms. If the power supply is applied in the high state of input signal, the output (Vo) remains in the low state. But V FO becomes in the low state for 3 to 6 ms. After normal function starts, if VCC is below the start voltage of protection circuit (Typ. 15.2V), VFO is low and Vo is low voltage for the same period. (2) After VFO returns to high level, control signal shoud be applied. (3) If over-current or short-circuit current flows between the collector and emitter of IGBT modules, the internal RTC circuit pulls the gate voltage down below 11V (4) When the turn-on of IGBT coincides with over-current or short-circuit current, the timer circuit functions after tc. (5) After td from the short-circuit or over-current, the output voltage of Vo is low and V FO is low voltage at the same time. The output remains low during the operating time of timer circuit regardless of input signals. (6) If the input signal is low level after ttimer, the protection function is cancelled. And then VFO returns to high voltage. CONTROL OF IGBT MODULE DRIVER The timing chart for control of IGBT module drivers with electrical isolation between the input and output is as follows. (1)Power supply applied (2)Normal (3)Occurrence of over-current or short-circuit current (6)Control signal "L" The protection circuit is cancelled. function start VG <11V (4) tc 3.5µs (VG ≤11V) (5) Fault output 27 pin "L" level Error detect 3~6ms tc 3.5µs td 6.5µs ttimer 2.5ms VFO VG 11V

Mar. 2002 MITSUBISHI HYBRID IC M57161L-01 FOR DRIVING TRENCH-GATE IGBT CHARACTERISTICS CURVES AMBIENT TEMPERATURE Ta ( °C) AMBIENT TEMPERATURE Ta ( °C) CONNECTIVE CAPACISTANCE Ctrip (pF), (Pin : 28-18) AMBIENT TEMPERATURE Ta ( °C) PROPAGATION DELAY TIME "L-H"t PLH (µs) PROPAGATION DELAY TIME "H-L"t PHL (µs) PROPAGATION DELAY TIME "L-H"t PLH (µs) PROPAGATION DELAY TIME "H-L"t PHL (µs) SHORT –CIRCUIT PROTECTION DELAY TIME td (µs) –400 0.5 2.0 1.5 1.0 2.5 3.0 –20 20 4006 0 8 0 –40 –20 20 4006 0 8 0 VD = 15V R G = 2.2Ω Ta = 25°C LOAD : CM600HU-24F VD = 15V VSC = 11V Ta = 25°C VD = 15V R G = 2.2Ω VIN = 5V LOAD : CM600HU-24F VD = 15V VSC = 11V tPHL tPLH tPHL tPLH tPLH , tPHL vs. Ta CHARACTERISTICS (TYPICAL) tPLH , tPHL vs. VI CHARACTERISTICS (TYPICAL) INPUT SIGNAL VOLTAGE V I (V) 3.0 0.0 2.5 2.0 1.5 1.0 0.5 3.0 4.0 5.0 6.0 7.0 td vs. Ta CHARACTERISTICS (TYPICAL) SHORT –CIRCUIT PROTECTION DELAY TIME td (µs) td vs. Ctrip CHARACTERISTICS (TYPICAL) POWER DISSIPATION vs. AMBIENT TEMPERATURE (MAXIMUM RATING) DISSIPATION CURRENT vs. SUPPLY VOLTAGE (TYPICAL) 2.5 1.5 0.5 20 40 60 80 100 POWER DISSIPATION PD (W) 0 100 200 300 400 500 SUPPLY VOLTAGE V D (V) 12 13 14 15 160 120 100 DISSIPATION CURRENT (mA) Ta = 25°C INPUT SIGNAL "H" INPUT SIGNAL "L" Ctrip = 100pF Ctrip = 0