M54513FP MITSUBISHI | Alldatasheet

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<TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE 2012.May PIN CONFIGURATIONDESCRIPTION M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated circuits perform high-current driving with extremely low input- current supply.

FEATURES

  • High breakdown voltage （BVCEO ≧ 40V）
  • Synchronizing current (Ic(max) = 50mA) APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals FUNCTION The M54513FP each have eight circuits consisting of NPN transistors. These ICs have resistance of 2kΩ at inputs and of 13.6kΩ between the base and emitter. The GND is used in common in each circuit. The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. Package type 20P2N-A →O2 →O3 →O4 →O5 →O6 →O7 →O8 IN2→ IN3→ IN4→ IN5→ IN6→ IN7→ IN8→ GND NC OUTPUTINPUT 2 19 →O1IN1→ 1 20NC NC NC : No connection CIRCUIT DIAGRAM The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :Ω OUTPUT INPUT GND 13.6K mA50Current per circuit output, LCollector currentIC ℃–55 ～ +125Storage temperatureTstg ℃–20 ～ +75Operating temperatureTopr W1.10Ta = 25 C, when mounted on boardPower dissipationPd V-0.5 ～ +10Input voltageVI V–0.5 ～ +40Output, HCollector-emitter voltageVCEO Unit Ratings Conditions Parameter Symbol ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 C)

<TRANSISTOR ARRAY> 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE M54513FP 2012.May NOTE 1 TEST CIRCUIT 50Ω CL RL VO PG INPUT OUTPUT Measured device (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10 s, tr = 6ns, tf = 6ns, ZO = 50 VP = 2.5VP-P (2) Output conditions : RL = 300 , VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TIMING DIAGRAMOUTPUT INPUT 50% 50% ｔon 50% 50% ｔoff V“H” input voltageVIH V0.2－0“L” input voltageVIL 8－2 mA30－0Collector current IC V40－0Output voltage VO maxtypmin UnitLimits Parameter Symbol RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75 C) *: The typical values are those measured under ambient temperature (Ta) of 25 C. There is no guarantee that these values are ob tained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75 C) VI = 2.5V, IC = 30mA VI = 2V, IC = 10mA --20080VCE = 4V, IC = 30mA, Ta = 25℃DC amplification factorhFE mA1.70.85—VI = 2.5VInput currentII 17070— mV10025—Collector-emitter saturation voltageVCE(sat) V——40ICEO = 100μACollector-emitter breakdown voltage V(BR)CEO maxtypmin UnitLimits Test conditionsParameter Symbol ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75 C) ｎｓ—1200—Turn-off time toff ｎｓ—65—CL = 15pF(note 1)Turn-on time ton maxtypmin UnitLimits Test conditionsParameter Symbol

<TRANSISTOR ARRAY> 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE M54513FP 2012.May Collector current Ic (mA) Grounded Emitter Transfer Characteristics Input voltage VI (V) 0 0.5 1.0 1.5 2.0 Output Saturation Voltage Collector Current Characteristics Output saturation voltage VCE(sat) (V) Collector current Ic (mA) 0 0.05 0.10 0.15 0.20 Ta=25℃ Ta=-20℃ Ta=75℃ VI=2V Input Characteristics Input voltage VI (V) Ta=75℃ Ta=-20℃ Ta=25℃ Input current II (mA) TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics Ambient temperature Ta (℃) Power dissipation Pd (W) 02 5 5 0 7 5 1 0 0 0.5 1.0 1.5 DC Amplification Factor Collector Current Characteristics Collector current Ic (mA) DC amplification factor hFE Ta=25℃ Ta=-20℃ Ta=75℃ VCE=4V 10 1 107532 210 1753210 0 Ta=25℃ Ta=-20℃ Ta=75℃ VCE=4V 502.0 103 50 24 8 1 0 6

<TRANSISTOR ARRAY> 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE M54513FP 2012.May PACKAGE OUTLINE

<TRANSISTOR ARRAY> 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE M54513FP 2012.May © 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that troub le may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials

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