M52769FP

M52769FP MITSUBISHI | Alldatasheet

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MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC PIN CONFIGURATION (TOP VIEW)

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RECOMMENDED OPERATING CONDITIONS APPLICATION 12 13 241 LIMITER IN AF FILTER QIF OUT Vcc VCO COIL VIDEO OUT APC FILTER SIF CARRIER DET LEVEL VCO COIL NTSC / OTHER SW Vcc SIF CARRIER DET OUT RF AGC DELAY AFT OUT RF AGC OUT VIF IN VIF IN SIF IN IF AGC FILTER / FM RADIO FM DET COIL AUDIO OUT GND GND NC TV,VTR 24pin SSOP Supply Voltage Range (Vcc) • • • • • • • • 4.75 to 5.25 V Rated Supply Voltage (Vcc) • • • • • • • • 5.0 V M52769FP is a semiconductor integrated circuit consisting of VIF/SIF signal processing for CTVs and VCRs. M52769FP corresponds to FM radio and provide low cost and high performance system with the coil-less AFT. FM radio receiving is available without FM radio IC and external filter Built-in FM radio carrier indicator Coil-less AFT. The PLL-SPLIT system provides good sound sensitivity and reduces buzz. Video output is 2.0Vp-p through EQ AMP. Built-in QIF AGC. Improve over modulation characteristics and Vcc ripple rejection.

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC BLOCK DIAGRAM and PERIPHERAL CIRCUIT 1 2 3 4 5 6 7 8 9 10 24 23 22 21 20 19 18 17 16 15 AFT RF AGC APC IF AGC VIF AMP VIDEO DET VCO AMP Radio TV LIM AMP AF AMP QIF AGC SIF AMP QIF DET TV Radio 50K 11 12 14 13 TP3TP1 TP2 VIF INSW1 1 5V SIF IN 5549 VCO COIL Vcc 5V N.C BPF 5923 FM det coil 50K FM DET

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC ( Ta = 25ºC, unless otherwise noted ) Parameter Symbol Supply Voltage 1 Vcc Power Consumption Pd Operating Temperature Topr Storage Temperature Tstg Ratings Unit V 1190 mW -20 to +75 ºC -40 to +150 ºC 6.0 Note Temperature Characteristics ( maximum ratings ) Ambient temperature Ta (ºC) 0 25 50 75 100 125 250 500 750 1000 1750 150-20 1250 1500 Mounting in standard circuit board 714 1190 ABSOLUTE MAXIMUM RATINGS

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC (Vcc=5V,Ta=25ºC unless otherwise noted)ELECTRICAL CHARACTERISTICS NO Parameter Symbol Measurement condition Limits MIN TYP MAX Unit Note Test Circuit Test Point Input Point Input SG switches set to position 1 unless otherwise noted External power V10 V14 TV Mode Circuit Current 1 Vcc=5V ICC1 1 A mA Video Output DC Voltage 1 Video Output Voltage 1 Video S/N Video Band Width Maximum Allowable Input AGC Control Range Input IF AGC Voltage Maximum IF AGC Voltage Minimum IF AGC Voltage Maximum RF AGC Voltage Minimum RF AGC Voltage Capture Range U Capture Range L Capture Range T V22 1 TP22A — — V Vo det 1 Vp-p Video S/N TP22B VIF IN SG2 dB BW TP22A VIF IN SG3 MHz VIN MIN TP22A VIF IN SG4 dBµ VIN MAX TP22A VIF IN SG5 dBµ GR — — — — dB V10 TP10 VIF IN SG6 V V10H TP10 V V10L TP10 VIF IN SG7 V V3H TP3 VIF IN SG6 V V3L TP3 VIF IN SG7 V CL-U TP22A VIF IN SG9 MHz CL-L TP22A VIF IN SG9 MHz CL-T — — — MHz RF AGC Delay Point V3 TP3 VIF IN SG8 dBµ SW22=2 3.5 2.1 VCC=5V SW19=2 SW1=1 Input Sensitivity VIF IN SG1 SW10=2 SW10=2 7.0 105 3.2 4.4 2.4 4.7 0.1 1.7 2.4 4.1 — — 0 — TP22A —— — — Vari- able — — — — — — — SG1VIF IN AFT Minimum Voltage V2L 1 VIF IN SG10 V 10 AFT Maximum Voltage V2H 1 VIF IN SG10 V 10 AFT Sensitivity µ 1 TP2 VIF IN SG10 mV kHz 1035 TP2 TP2 4.15 0.7 — — 3.2 1.8 6.0 101 2.9 4.0 2.2 4.2 1.0 1.8 3.1 3.85 3.8 2.4 3.5 2.6 0.5 1.2

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 5 NO Parameter Symbol Measurement condition Limits MIN TYP MAX Unit Note Test Circuit Test Point Input Point Input SG switches set to position 1 unless otherwise noted External power V10 V14 VIF IN Inter Modulation Differential Gain Differential Phase Sync. tip level

1 TP22A

1 VIF

V TP22A TP22A TP22A SW10=2 40 1.15 Vari- able — 0.85 1.45 VIF Input Resistor VIF Input capacitance 2 TP5 RINV CINV 2 kΩ pF 1.2 TP5 —

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 6 NO Parameter Symbol Measurement condition Limits MIN TYP MAX Unit Note Test Circuit Test Point Input Point Input SG switches set to position 1 unless otherwise noted External power V10 V14 FM Radio Mode SIF detection out High Voltage V16H 1 TP16 V

1 TP16

IN dBµ SIF detection Threshold Point TSIF 1 TP16 SIF IN SG21 AF Output 1 TP12 SW10=2 mVrms—

0 SW10=2

Low Voltage V16L 0 SW10=2 V

0 SW10=2— dBµ

TP3 0 — SW10=2 VoF LIM IN SG22 0

1 SW10=2 dB—

Distortion 1 TP12 SW10=2 %—THD F LIM IN SG22 0 AF S/N S/N F TP12 LIM IN SG19 0 SG21 SIF IN SG20 560 4.8 0.2 0.2 SW1=2 9034 NO Parameter Symbol Measurement condition Limits MIN TYP MAX Unit Note Test Circuit Test Point Input Point Input SG switches set to position 1 unless otherwise noted External power V10 V14 AF S/N (4.5MHz) AF Output (4.5MHz) AFOutput Distortion (4.5MHz) Limiting Sensitivity (4.5MHz) AM Rejection (4.5MHz)

1 TP12

SG15 % LIM1 SG17AMR1 SG16 AF S/N1 dBµ TP12 LIM IN SG19 dB dB 430 0.2

27 QIF1

— — QIF Output Voltage 1 QIF Output Voltage 2 dBµ dBµ LIM IN LIM IN LIM IN LIM INTP12 TP12 300 615 1.0 102 102 400 4.0 800 1.0 1.0 SIF Input Resistor SIF Input capacitance 2 TP9 RINS CINS 2 TP9 1.5 kΩ pF

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC Measuring Circuit Diagram1 * All capacitor is 0.01µF, unless otherwise noted. * The Measuring Circuit 1 is Mitsubishi standard evaluation fixture. FM DET 1 2 3 4 5 6 7 8 9 10 24 23 22 21 20 19 18 17 16 15 AFT RF AGC APC IF AGC VIF AMP VIDEO DET VCO AMP Radio TV LIM AMP AF AMP QIF AGC SIF AMP QIF DET TV Radio 50K 11 12 14 13 50K TP15 5549 TP16 VCO COIL Vcc=5V A SW19 TP22B SW22 1 2TP24 LIM IN 2 12 1 TP3TP1 TP2 VIF IN 1:1 SW1 SW10 TP10 TP9 SIF IN TP12 N.C 5923 FM det coil BPF Vcc SW15 SW13 1 2 SW21

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 8 * All capacitor is 0.01µF, unless otherwise noted. FM DET 1 2 3 4 5 6 7 8 9 10 24 23 22 21 20 19 18 17 16 15 AFT RF AGC APC IF AGC VIF AMP VIDEO DET VCO AMP Radio TV LIM AMP AF AMP QIF AGC SIF AMP QIF DET TV Radio 50K 11 12 14 13 50K HI LO RX meter TP4 HI LO RX meter TP7 Measuring Circuit Diagram2

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC INPUT SIGNAL SG 50ohm Termination fo=58.75MHz AM 20 KHz 77.8 % 90 dBµ fo=58.75MHz 90 dBµ Cw f1=58.75MHz 90 dBµ Cw f2=Frequency Variable 70 dBµ Cw Mixed Signal fo=58.75MHz AM 20 KHz 77.8% Level Variable fo=58.75MHz AM 20 KHz 14.0% Level Variable fo=58.75 MHz 80 dBµ Cw fo=58.75 MHz 110 dBµ Cw fo=Frequency Variable AM 20 KHz 77.8 % 90 dBµ fo=Frequency Variable 90 dBµ Cw f1=58.75MHz 90 dBµ Cw f2=55.17MHz 80 dBµ Cw f3=54.25MHz 80 dBµ Cw Mixed Signal fo=58.75MHz 87.5 % TV modulation Ten-step waveform Sync Tip Level 90 dBµ fo=54.25MHz 95 dBµ Cw fo=54.25MHz 75 dBµ Cw fo=4.5 MHz 90 dBµ FM 400 Hz ±25 KHz dev fo=4.5 MHz Level Variable FM 400Hz ±25KHz dev fo=4.5 MHz 100 dBµ AM 400 Hz 30 % fo=4.5 MHz 90 dBµ Cw fo=58.75 MHz Level Variable Cw fo=4.5 MHz Level Variable Cw fo=54.25 MHz Level Variable Cw fo=54.25 MHz 90 dBµ Cw fo=4.5 MHz 90 dBµ FM 400 Hz ±75 KHz dev

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC Notes 1. Video S/N Input SG2 into VIF IN and measure the video out(Pin 22) noise in r.m.s at TP22-B through a 5MHz (-3dB) L.P.F. S/N=20 log 0.7 X V 0 det NOISE 2. Video Band width: BW 1. Measure the 1MHz component level of Video output TP22A with a spectrum analyzer when SG3(f2=57.75MHz) is input into VIF IN. At that time, measure the voltage at TP10 with SW10, set to position 2, and then fix V10 at that voltage. 2. Reduce f2 and measure the value of (f 2-f1) when the (f2-f1) component level reaches -3dB from the 1MHz component level as shown below. TP22 -3dB

1 MHz BW

( f2 - f1 ) 3. Input Sensitivity: VIN MIN Input SG4 (Vi=90dBµ) into VIF IN , and then gradually reduce Vi and measure the input level when the 20KHz component of Video output TP22A reaches -3dB from Vo det level. 4. Maximum Allowable Input: VIN MAX 1. Input SG5 (Vi=90dBµ) into VIF IN , and measure the level of the 20KHz component of Video output. 2. Gradually increase the Vi of SG and measure the input level when the output reaches -3dB. (dB)

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 5. AGC Control Range: GR GR = VIN MAX - VIN M IN (dB) 7. Capture range: CL - U 1. Increase the frequency of SG9 until the VCO is out of locked-oscillation. 2. Decrease the frequency of SG9 and measure the frequency fU when the VCO locks. CL - U = fU - 58.75 (MHz) 8. Capture range: CL - L 1. Decrease the frequency of SG9 until the VCO is out of locked-oscillation. 2. Increase the frequency of SG9 and measure the frequency fL when the VCO locks. CL - L = 58.75 - fL (MHz) 9. Capture range: CL - T CL - T = CL - U + CL - L (MHz) 6. RF AGC Operating Voltage: V3 Input SG8 into VIF IN and gradually reduce Vi and then measure the input level when RF AGC output TP3 reaches 1/2 VCC, as shown below. TP3 Voltage Vi V3H Vi(dBµ) V3L 1/2VCC

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 11. Inter modulation: IM 1. Input SG11 into VIF IN, and measure EQ output TP22A with an oscilloscope. 2. Adjust AGC filter voltage V10 so that the minimum DC level of the output waveform is 1.0V. 3. At this time, measure TP22A with a spectrum analyzer . The inter modulation is defined as a difference between 0.92MHz and 3.58 MHz frequency components. 10. AFT sensitivity u, Maximum AFT voltage V2H, Minimum AFT voltage V2L 1. Input SG10 into VIF IN, and set the frequency of SG10 so that the voltage of AFT output TP2 is 3V . This frequency is named f(3). 2. Set the frequency of SG10 so that the AFT output voltage is 2V. This frequency is named f(2) u = 1000 (mV) f(2) - f(3) (kHz) (mV / kHz) TP2 Voltage f(3) f(2) V2H f(MHz) V2L 3. IN the graph, maximum and minimum DC voltage is V2H and V2L, respectively.

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 13. AM Rejection: AMR 1. Input SG17 into SIF IN, and measure the output level of AF OUT (TP12). This level is named VAM. 2. AMR is; AMR = 20log VoAF (mVr.m.s) VAM (mVr.m.s) (dB) 14. AF S/N: AF S/N 1. Input SG19 into SIF IN, and measure the output noise level of AF OUT (TP12). This level is named VN. 2. S/N is; S/N = 20log VoAF (mVr.m.s) VN (mVr.m.s) (dB) 12. Limiting Sensitivity: LIM 1. Input SG16 (Vi=90dBµ) into SIF IN, and measure the 400Hz component level of AF output TP12. 2. Lower the input level of SG16, and measure the level of SG16 when the VoAF level reaches -3dB. -3dB Audio output [dBµ] [mVrms] Input level90LIM

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 15. SIF detection threshold level TSIF SG21 is applied to SIF IN and the input amplitude is swept. Then, the level of SG21, TSIF, is measured at the time when the DC voltage of SIF CARRIER DET OUT (TP16) has just begun to vary. 16. RF AGC voltage V3F SG21 is applied to SIF IN and the input amplitude is swept. Then, the level of SG21, V3F, is measured at the time when the DC voltage of RF AGC OUT (TP3) has just reached 1/2Vcc. 17. AF S/ N (S/N F) 1. SG19 is applied to SIF IN and the output noise of AUDIO OUT (TP12) is measured. The measured noise is named VNF. 2. S/N F is, S/N F = 20log VoF [mVr.m.s] VNF [mVr.m.s] [dB]

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC VCO coil adjustment methods 1. Input SG2 (fo=58.75MHz, 90dBµ CW) into VIF IN. 2. And adjust the coil until the voltage of AFT output reaches about Vcc/2=2.5V. FM DET coil adjustment methods 1. The first thing, adjust the VCO coil. 2. Input SG13 (fo=54.25MHz, 95dBµ CW) into SIF IN. 3. Change the switch of SW13 and SW15 to 2 position. 4. Change to FM RADIO mode (V10=0V). 5. Adjust the DC voltage of AFT OUT to Vcc/2 and SIF det OUT to Low (under 1V).

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 16 DETAILED DIAGRAM OF PACKAGE OUTLINE SSOP24-P-300-0.80 Weight(g) JEDEC Code 0.2 Cu Alloy 24P2Q-A Plastic 24pin 300mil SSOP Symbol Min Nom Max A b c D E L y Dimension in Millimeters H E .3 0 .18 0 .010 .2 5 .5 7 .4 0 .27 1 .1 0 .8 1 .35 0 .2 0 .110 .3 5 .8 0 .8 7 .6 0 .25 1 .62 7 .2 0 .1 2 .45 0 .25 0 .210 .4 5 .1 8 .8 0 .1 0 b2 –. 5 0– 0° –8 ° e 24 13 121 HE E D be y F A A2 A1 L c e b2 Recommended Mount Pad Detail F

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 17 Keep safety first in your circuit designs! lMitsubishi El ectric Corporation puts the maximum e ffort into m aking semiconductor products better and more reliable, but th ere is always the possibility th at trouble may occur with them. T rouble with semiconductors may lead to personal injury, fire or property damage. R emember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutiv e, auxiliary circuits, (ii) use of non- flammable material or (iii) prevention against any malfunction or mish ap. Notes regarding these materials lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi s emiconductor product best suited to th e customer's application; th ey do not convey any license under any intellectual property rights, or any other rights , belonging to Mitsubishi Ele ctric Corporation or a third party. lMitsubishi El ectric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, origin ating in th e use of any product data, di agrams, charts, p rograms, algorithms, or circuit application examples contained in these materials. lAll information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time o f publication of these materials, and are subject to change by Mitsubishi El ectric Corporation without noti ce due to product improvements or other reasons. It is th erefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi El ectric Corporation assumes no responsibility for any damage, li ability, or oth er loss rising from these inaccuracies or errors. Please also pay attention to in formation published by Mitsubishi El ectric Corporation by various means, in cluding the Mitsubishi S emiconductor home page (http://www.mitsubishi chips.com). lWhen using any or all o f the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system be fore making a final decision on the applicability o f the information and products. Mitsubishi El ectric Corporation assumes no responsibility for any damage, li ability or other loss r esulting from the information contained herein. l Mitsubishi El ectric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Pl ease contact Mitsubishi Electric Corporation or an authorized Mitsubishi S emiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. lThe prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. lIf these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibit ed. lPlease contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.