M52768FP MITSUBISHI | Alldatasheet

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MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC PIN CONFIGURATION (TOP VIEW)

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RECO MM ENDED OPER ATING CONDITIONS APPLICATION M52768FP is a semiconductor integrated circuit consisting of VIF/SIF signal processing for CTVs and VCRs. M52768FP pro vide low cost and high perfor mance s ystem wi th the coil-less AFT. RF AGC DELAY AFT OUT RF AGC OUT VIF IN VIF IN GND IF AGC FILTER NFB AUDIO OUTLIMITER IN Vcc VCO COIL VIDEO OUT APC FILTER EQ F/B VCO COIL EQ OUT IF AGC FILTER EQ IN 10 11 APC SW TV,VTR Supply Voltage Range ( Vcc) • • • • • • • 4.5 to 5.5 V Rated Suppl y Voltage (Vcc) • • • • • • • 5.0 V Inter carrier /NTSC onl y(4.5MHz) Coil-less AFT. PLL FM demodulation for Audio. No external parts and adjust ment. Video output is 2.0 Vp-p through EQ AMP. Easy to add Buzz canceler. Hi speed IF AGC. Improve over modulation characteristics. 20pin SSOP

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC RF AGC Delay RF AGC OUT Vcc Vcc 4.5MHz Filter4.5MHz Trap AFT OUT Vcc AF OUT IF IN EQ OUT 1 2 3 4 5 6 7 8 9 10 1114151617181920 13 12 AFT RF AGC APC IF AGC AF AMP VIF AMP VIDEO DET VCO EQ AMP FM DET LIM AMPAPC SW BLOCK DIAGRAM and PERIPHERAL CIRCUIT

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC ( Ta = 25ºC, unless otherwise noted ) Parameter Symbol Supply Voltage 1 Vcc Power Consump tion Pd Operating Temperature Topr Storage Temperature Tstg Ratings Unit V 624 mW -20 to +75 ºC -40 to +150 ºC 6.0 Note Temperature characteristics (maximum ratings) 200 400 600 800 1000 -25 0 25 50 75 100 125 150 Ambient temperature Ta [oC] Allowable power consumption Pd [mW] ABSOLUTE M AXIMUM R ATINGS

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC No. Parameter Symbol Mea s urement Te s t C i rcuit Icc 1 A m A Vo det 1 TP1A Vp-pVIF IN SG1 Video S/N

1 TP1B VIF

SW1=2 MHz 2 VIN M IN 1 TP1A VIF IN SG4 dBµ 3 VIN MAX 1 TP1A VIF IN SG5 dBµ 4 GR dB 5 V19 1 TP19 VIF IN SG6 V V2 1 TP2 V V13H 1 TP13 VIF IN SG6 V V13L 1 TP13 VIF IN SG7 V CL-U 1 TP1A VIF IN SG9 MHz 7 CL-L 1 TP1A VIF IN SG9 MHz 8 CL-T MHz 9 V13 1 TP13 VIF IN SG8 dBµ 6 SW19=2 V19=Variable SW4=2 33 6.0 110 3.1 4.75 0.1 1.5 1.8 3.3 2.0 3.1 Vo det8 1 TP8 Vp-pVIF IN SG1 1.1 (Vcc=5V,Ta=25ºC unles s o therwise noted)V IF Section Te st Point Input Point Input SG switches set to position 1 unless otherwise noted Limits M IN T YP MAX Unit Note Circuit Current Video Output Voltage 1 Video S/N Video Band Width Maximum Allowable Input AGC Control Range Input IF AGC Voltage 1 IF AGC Voltage 2 Maximum RF AGC Voltage Minimum RF AGC Voltage Capture Range U Capture Range L Capture Range T RF AGC Dela y Point Input Sensiti v ity Video Output Voltage 8 - - - - - - -1 VIF IN SG6

ELECTRICAL CHARACTERISTICS

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC V14L 1 TP14 VIF IN SG10 V 10

1 TP14 VIF

IN SG11 SW19=2 V19=Variable dB 11 DG 1 TP1A VIF IN SG12 % DP 1 TP1A VIF IN SG12 deg SYNC 1 TP1A VIF IN SG2 V V14H 1 TP14 VIF IN SG10 V 10 µ 1 TP14 VIF IN SG10 mV kHz 10 30 4.8 0.1 2.5 0.8 No. Parameter Symbol Mea s urement Te s t C i rcuit Te st Point Input Point Input SG switches set to position 1 unless otherwise noted Limits M IN T YP MAX Unit Note Inter Modulation Di ff erential Gain Di ff erential Phase S y nc. tip le v el AFT Minimum Voltage AFT Maximum Voltage AFT Sensiti v ity AFT de f eat -

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC (Vcc=5V,Ta=25 º C unless o therwise noted)SIF Section VoAF

1 TP11 SIF

1 TP11 SG18 dB 1355

IN SG17 dB µ 1242 THD AF 1 1 TP11 SIF IN SG16 %0.8 No. Parameter Symbol Mea s urement Te s t C i rcuit Te st Point Input Point Input SG switches set to position 1 unless otherwise noted Limits M IN T YP MAX Unit Note AF S/N AF Output AFOutput Distortion Limiting Sensiti v ity AM Rejection

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC Note) All the capacitor s a re 0.01µF, unle ss otherwi s e noted. The Mea s uring Circuit 1 i s Mit s ubi s hi s tandard evaluation fixture. Measuring Circuit Diagram TP13 4.5MHz Trap TP11 SW12 A Vcc1 SW5 VIF IN 1:1 L P F 1 2 TP1B TP1A SW1 0.1u TP19 V19 TP14 TP2 33u 330 470 200 510 0.22u 0.1u 7.5k 150k 150k 30k 20k 1 2 3 4 5 6 7 8 9 10 1114151617181920 13 12 AFT RF AGC APC IF AGC AF AMP VIF AMP VIDEO DET VCO EQ AMP FM DET LIM AMPAPC SW 15u TP8

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC INPUT SIGNAL SG 50 Ω Ter mination f0 = 45.75 MHz AM 20 KH z 77.8 % 90 dB µ f0 = 45.75 MHz 90 dB µ Cw f1 = 45.75 MHz 90 dB µ Cw f2 = Frequenc y V ariable 70 dB µ Cw M ix ed Signal f0 = 45.75 MHz AM 20 KH z 77.8% Le v el Variable f0 = 45.75 MHz AM 20 KH z 14.0% Le v el Variable f0 = 45.75 MHz 80 dB µ Cw f0 = 45.75 MHz 110 dB µ Cw f0 = Frequenc y V ariable AM 20 KH z 77.8 % 90 dB µ f0 = Frequenc y V ariable 90 dB µ Cw f1 = 45.75 MHz 90 dB µ Cw f2 = 42.17 MHz 80 dB µ Cw f3 = 41.25 MHz 80 dB µ Cw M ix ed Signal f0 = 45.75 MHz 87.5 % TV modulation Ten-step wa veform Sync Tip Le v el 90 dB µ f1 = 41.25 MHz 95 dB µ Cw f1 = 41.25 MHz 75 dB µ Cw f0 = 4.5 MHz 90 dB µ FM 400 H z ± 25 KH z dev f0 = 4.5 MHz Level Variable FM 400Hz ± 25KH z dev f0 = 4.5 MHz 90 dB µ AM 400 H z 30 % f0 = 4.5 MHz 90 dB µ Cw f0 = 45.75 MHz Cw Level Variable M ix ed Signalf1 = 45.75 MHz 90 dB µ Cw f2 = 41.25 MHz 70 dB µ Cw f0 = 4.5 MHz Level Variable Cw

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC Notes 1. Video S/N Input SG2 to V IF IN and measure the v ideo out(Pin 1) noise in r.m.s at TP1B through a 5 MHz (-3dB) L.P.F. S/N=20 log 0.7 × V o det NOISE 2. Video Band Width: BW 1. Mea sure the 1 MHz co mponent le v el of V ideo output TP1 A with a spectru m anal yz er when SG3(f 2 =44.75 MHz) i s input to V IF IN. At that ti me , measure the voltage at TP19 with SW19, se t to po si tion 2, and then fi x V 19 at that v oltage. 2. Reduce f 2 and measure the value of (f 2 -f 1 ) when the (f 2 -f 1 ) component le v el reaches -3dB from the 1 MHz co mponent le v el as shown below. TP1A -3dB

1 MHz BW

( f 2 - f 1 ) 3. Input Sen si tivity: VIN MIN Input SG4 ( V i=90dB µ ) to VIF IN , and then graduall y reduce V i and measure the input le vel when the 20KH z c omponent of V ideo output TP1 A reaches - 3dB fro m Vo det le vel. 4. Maxi mum A llowable Input: VI N MAX 1. Input SG5 ( V i=90dB µ ) to V IF IN , and measure the le v el of the 20KHz component of V ideo output. 2. Graduall y increase the V i of SG and measure the input le v el when the output reaches -3dB. [dB]

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 5. AGC Control Range: GR GR = VI N MAX - VIN MIN [dB] 7. Capture range: CL - U 1. Increase the frequenc y of SG9 until the VCO i s ou t of locked-o scillation. 2. And decrea se the frequenc y of SG9 and measure the frequenc y f U when the VCO is locked. CL - U = fU - 45.75 [ MHz] 8. Capture range: CL - L 1. Decrease the frequenc y of SG9 until the VCO i s ou t of locked-o scillation. 2. And increa se the frequenc y of SG9 and measure the frequenc y f L when the VCO is locked. CL - L = 45.75 - fL [ MHz] 9. Capture range: CL - T CL - T = CL - U + CL - L [ MHz] 6. RF AG C Operating Voltage: V 13 Input SG8 to VIF I N and graduall y r educe V i and then measure the input le v el when RF AGC output TP17 reaches 1/2 VCC, as shown below. TP13 Voltage Vi V 13H Vi [dB µ ] V 13L 1/2VCC

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 11. Inter modulation: IM 1. Input SG11 to VIF I N, and measure v ideo output TP9 with an oscilloscope. 3. At thi s ti me , measure TP9 with a spectru m anal yz er . The inter modulation is defined as a difference between 0.92 MHz and 3.58 MHz frequency components. 10. AFT sensi tivity µ , Max imum AFT v oltage V 14H , M ini mum AFT v oltage V 14L 1. Input SG10 to VIF I N , and set the frequenc y of SG10 so that the voltage of AFT output TP14 i s 3 [V] . Thi s frequenc y is named f(3). 2. Set the frequenc y of SG10 so that the AFT output voltage i s 2 [V]. This frequenc y is named f(2) µ = 1000 [m V] f(2) - f(3) [kH z] [mV/kHz] TP14 Voltage f(3) f(2) V 14H f [MHz] V 14L 3. IN the graph, ma x imum and minimum DC voltage are V 14 H and V 14L , re specti vely. 2. Adjust AG C filter v oltage V19 so that the m inimum DC le v el of the output wa v efor m is Sync. tip le v el 1.5 V.

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 13. AM Rejection: AMR 1. Input SG18 to SIF IN ,and measure the output le v el of Audio output (TP11). Thi s le v el is named VAM. 2. AMR i s; AM R = 20log V oAF ( m Vr. m .s) VAM (m Vr. m .s) [dB] 14. AF S/ N: AF S/N 1. Input SG19 to SIF IN ,and measure the output noise le v el of Audio output (TP11). Thi s le v el is named VN. 2. S/N i s; S/N = 20log V oAF ( m Vr. m .s) VN (mVr.m.s) 12. Limiting Sensiti v ity: LIM [dB] 1. Input SG17 to SIF IN, and measure the 400H z co mponent le v el of AF output TP11. 2. Input SG20 to SIF IN, and measure the 400H z co mponent le v el of AF output TP11. 3. The input limiting sensiti v ity is defined as the input le v el when a difference between each 400H z c omponents of audio output (TP11) is 30dB, as shown below. 30dB Audio output while SG17 i s input. [dB µ ] [mVrm s] Audio Output Audio output while SG20 i s input. SIF Input

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 13 DETAILED DIAGRAM OF PACKAGE OUTLINE SSOP20-P-225-0.65 Weight(g) JEDEC Code 0.08 Alloy 42 20P2E-A Plastic 20pin 225mil SSOP Symbol Min Nom Max A b c D E L y Dimension in Millimeters H E .17 0 .13 0 .4 6 .3 4 .2 6 .3 0 .0 1 .1 0 .15 1 .22 0 .15 0 .5 6 .4 4 .65 0 .4 6 .5 0 .0 1 .8 5 .2 0 .45 1 .32 0 .2 0 .6 6 .5 4 .6 6 .7 0 .1 0 b2 –. 3 5 0– 0° –1 0 ° e 20 11 101 HE E D be y F A A2 A1 L c e b2 Recommended Mount Pad Detail F

MITSUBISHI ICs (TV) MITSUBISHI ELECTRIC 14 Keep safety first in your circuit designs! lMitsubishi El ectric Corporation puts the maximum e ffort into m aking semiconductor products better and more reliable, but th ere is always the possibility th at trouble may occur with them. T rouble with semiconductors may lead to personal injury, fire or property damage. R emember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutiv e, auxiliary circuits, (ii) use of non- flammable material or (iii) prevention against any malfunction or mish ap. Notes regarding these materials lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi s emiconductor product best suited to th e customer's application; th ey do not convey any license under any intellectual property rights, or any other rights , belonging to Mitsubishi Ele ctric Corporation or a third party. lMitsubishi El ectric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, origin ating in th e use of any product data, di agrams, charts, p rograms, algorithms, or circuit application examples contained in these materials. lAll information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time o f publication of these materials, and are subject to change by Mitsubishi El ectric Corporation without noti ce due to product improvements or other reasons. It is th erefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi El ectric Corporation assumes no responsibility for any damage, li ability, or oth er loss rising from these inaccuracies or errors. Please also pay attention to in formation published by Mitsubishi El ectric Corporation by various means, in cluding the Mitsubishi S emiconductor home page (http://www.mitsubishi chips.com). lWhen using any or all o f the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system be fore making a final decision on the applicability o f the information and products. Mitsubishi El ectric Corporation assumes no responsibility for any damage, li ability or other loss r esulting from the information contained herein. l Mitsubishi El ectric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Pl ease contact Mitsubishi Electric Corporation or an authorized Mitsubishi S emiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. lThe prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. lIf these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibit ed. lPlease contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.