M470L3324BT0-CA2

M470L3324BT SAMSUNG | Alldatasheet

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DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice.

66 TSOP-II & 54 sTSOP-II

DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 Table of Contents

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005

Revision History

Revision Month Year History

1.0 February 2003 - First release

1.1 June 2003 - Updated DC characteristics. 1.2 July 2003 - Corrected Pin configuration table.

1.3 October 2003 - Corrected typo in physical module dimenstion

1.4 March 2004 - Corrected package dimension.

1.5 June 2005 - Changed master format

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Speed @CL2 - 133MHz 133MHz 100MHz Speed @CL2.5 166MHz 166MHz 133MHz 133MHz Speed @CL3 200MHz - - - 200Pin Unbuffered SODIMM based on 512Mb B-die (x8, x16)

• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height - 256MB(non ECC/ECC SS, 1250mil), 512MB/1GB(non ECC DS, 1250mil, ECC DS, 1400mil)
• SSTL_2 Interface
• 66pin TSOP II & 54pin sTSOP II (Leaded & Pb-Free(RoHS compliant)) package

1.0 Ordering Information

2.0 Operating Frequencies

Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P/N (T : 66 TSOP with Leaded, U : 66 TSOP with Lead-free) (N : 54 sTSOP with Leaded, V : 54 sTSOP with Lead-free) Part Number Density Organization Component Composition Height M470L3324BT(U)0-C(L)CC/B3/A2/B0 256MB 32M x 64 32Mx16 (K4H511638B) * 4EA 1,250mil M470L6524BT(U)0-C(L)CC/B3/A2/B0 512MB 64M x 64 32Mx16 (K4H511638B) * 8EA 1,250mil M470L2923BN(V)0-C(L)CC/B3/A2/B0 1GB 128M x 64 64Mx8 (K 4H510838B) * 16EA 1,250mil

3.0 Feature

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 Note : 1. * : These pins are not used in this module. 2. Pins 71, 72, 73, 74, 77, 78, 79, 80, 83, 84 are not used on x64(M470~ ) module, & used on x72(M485 ~ ) module. 3. Pins 95,122 are NC for 1Row module & used for 2Row moule(M470L6524B). Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back

1 VREF 67 DQ27 135 DQ34 2 VREF 68 DQ31 136 DQ38

3 VSS 69 VDD 137 VSS 4 VSS 70 VDD 138 VSS

5 DQ0 71 CB0 139 DQ35 6 DQ4 72 CB4 140 DQ39

7 DQ1 73 CB1 141 DQ40 8 DQ5 74 CB5 142 DQ44

9 VDD 75 VSS 143 VDD 10 VDD 76 VSS 144 VDD

11 DQS0 77 DQS8 145 DQ41 12 DM0 78 DM8 146 DQ45

13 DQ2 79 CB2 147 DQS5 14 DQ6 80 CB6 148 DM5

15 VSS 81 VDD 149 VSS 16 VSS 82 VDD 150 VSS

17 DQ3 83 CB3 151 DQ42 18 DQ7 84 CB7 152 DQ46

19 DQ8 85 DU 153 DQ43 20 DQ12 86 *DU/(RESET) 154 DQ47

21 VDD 87 VSS 155 VDD 22 VDD 88 VSS 156 VDD

23 DQ9 89 CK2 157 VDD 24 DQ13 90 VSS 158 CK1

25 DQS1 91 CK2 159 VSS 26 DM1 92 VDD 160 CK1

27 VSS 93 VDD 161 VSS 28 VSS 94 VDD 162 VSS

29 DQ10 95 CKE1 163 DQ48 30 DQ14 96 CKE0

164 DQ52

31 DQ11 97 DU 165 DQ49 32 DQ15 98 *DU(BA2) 166 DQ53

33 VDD 99 A12 167 VDD 34 VDD 100 A11 168 VDD

35 CK0 101 A9 169 DQS6 36 VDD 102 A8 170 DM6

37 CK0

103 VSS 171 DQ50 38 VSS 104 VSS 172 DQ54

39 VSS 105 A7 173 VSS 40 VSS 106 A6 174 VSS

KEY 107 A5 175 DQ51 KEY 108 A4 176 DQ55

41 DQ16 109 A3 177 DQ56 42 DQ20 110 A2 178 DQ60

43 DQ17 111 A1 179 VDD 44 DQ21 112 A0 180 VDD

45 VDD 113 VDD 181 DQ57 46 VDD 114 VDD 182 DQ61

47 DQS2 115 A10/AP 183 DQS7 48 DM2 116 BA1 184 DM7

49 DQ18 117 BA0 185 VSS 50 DQ22 118 RAS

186 VSS

51 VSS 119 WE 187 DQ58 52 VSS 120 CAS 188 DQ62

53 DQ19 121 CS0 189 DQ59 54 DQ23 122 CS1 190 DQ63

55 DQ24 123 *DU(A13) 191 VDD 56 DQ28 124 DU 192 VDD

57 VDD 125 VSS 193 SDA 58 VDD 126 VSS 194 SA0

59 DQ25 127 DQ32 195 SCL 60 DQ29 128 DQ36 196 SA1

61 DQS3 129 DQ33 197 VDDSPD 62 DM3 130 DQ37 198 SA2

63 VSS 131 VDD 199 VDDID 64 VSS 132 VDD 200 DU

65 DQ26 133 DQS4 66 DQ30 134 DM4

Note : VDDID defines relationship of VDD and VDDQ, and the default status of it is open (VDD=VDDQ) Pin Name Function Pin Name Function A0 ~ A12 Address input (Multiplexed) DM0 ~7,8(for ECC) Data - in mask BA0 ~ BA1A Bank Select Address VDD Power supply (2.5V for DDR266/333, 2.6V for DDR400) DQ0 ~ DQ63 Data input/output VDDQ Power Supply for DQS (2.5V for DDR266/333, 2.6V for DDR400) DQS0 ~ DQS8 Data Strobe input/output VSS Ground CK0,CK0 ~ CK2, CK2 Clock input VREF Power supply for reference CKE0, CKE1(for double banks) Clock enable input VDDSPD Serial EEPROM Power/Supply ( 2.3V to 3.6V ) CS0, CS1(for double banks) Chip select input SDA Serial data I/O RAS Row address strobe SCL Serial clock CAS Column address strobe SA0 ~ 2 Address in EEPROM WE Write enable VDDID VDD, VDDQ level detection CB0 ~ CB7(for x72 module) Check bi t(Data-in/data-out) NC No connection

5.0 Pin Description

4.0 Pin Configuration (Front side/back side)

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 (Populated as 1 bank of x16 DDR SDRAM Module) 6.1 256MB, 32M x 64 Non ECC Module (M470L3324BT(U)0) Notes: 1. DQ-to-I/O wiring is shown as recom- mended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms. A0 - A12 A0-A12: DDR SDRAMs D0 - D3 BA0 - BA1 BA0-BA1: DDR SDRAMs D0 - D3 RAS RAS: SDRAMs D0 - D3 CAS CAS: SDRAMs D0 - D3 CKE0 CKE: SDRAMs D0 - D3 WE WE: SDRAMs D0 - D3 Serial PD A1 A2 SA0 SA1 SA2 SCL SDAWPVSS D0 - D3 D0 - D3 VDD/VDDQ D0 - D3 D0 - D3VREF VDDSPD SPD Clock Wiring Clock Input SDRAMs CK0/CK0 CK1/CK1 CK2/CK2

2 SDRAMs

R=120Ω± 5% D1/D3/Cap CS0 I/0 15 I/0 14 I/0 13 I/0 12 I/0 8 I/0 9 I/0 10 I/0 11 LDQS CSLDM DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 DQS0 DM0 I/0 3 I/0 2 I/0 1 I/0 0 I/0 4 I/0 5 I/0 6 I/0 7 UDQS UDM DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 DQS1 DM1 I/0 15 I/0 14 I/0 13 I/0 12 I/0 8 I/0 9 I/0 10 I/0 11 LDQS CSLDM DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 37 DQ 38 DQ 39 DQS4 DM4 I/0 3 I/0 2 I/0 1 I/0 0 I/0 4 I/0 5 I/0 6 I/0 7 UDQS UDM DQ 40 DQ 41 DQ 42 DQ 43 DQ 44 DQ 45 DQ 46 DQ 47 DQS5 DM5 I/0 15 I/0 14 I/0 13 I/0 12 I/0 8 I/0 9 I/0 10 I/0 11 LDQS CSLDM DQ 16 DQ 17 DQ 18 DQ 19 DQ 20 DQ 21 DQ 22 DQ 23 DQS2 DM2 I/0 3 I/0 2 I/0 1 I/0 0 I/0 4 I/0 5 I/0 6 I/0 7 UDQS UDM DQ 24 DQ 25 DQ 26 DQ 27 DQ 28 DQ 29 DQ 30 DQ 31 DQS3 DM3 I/0 15 I/0 14 I/0 13 I/0 12 I/0 8 I/0 9 I/0 10 I/0 11 LDQS CSLDM DQ 48 DQ 49 DQ 50 DQ 51 DQ 52 DQ 53 DQ 54 DQ 55 DQS6 DM6 I/0 3 I/0 2 I/0 1 I/0 0 I/0 4 I/0 5 I/0 6 I/0 7 UDQS UDM DQ 56 DQ 57 DQ 58 DQ 59 DQ 60 DQ 61 DQ 62 DQ 63 DQS7 DM7

6.0 Functional Block Diagram

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 (Populated as 2 bank of x16 DDR SDRAM Module) Serial PD A1 A2 SA0 SA1 SA2 SCL SDAWP VSS D0 - D7 VDD/VDDQ D0 - D7 D0 - D7VREF VDDSPD SPD Clock Wiring Clock Input SDRAMs CK0/CK0 CK1/CK1 CK2/CK2

4 SDRAMs

A0 - A12 A0-A12: DDR SDRAMs D0 - D7 BA0 - BA1 BA0-BA1: DDR SDRAMs D0 - D7 RAS RAS: SDRAMs D0 - D7 CAS CAS: SDRAMs D0 - D7 CKE0 CKE: SDRAMs D0 - D3 WE WE: SDRAMs D0 - D7 CKE1 CKE: SDRAMs D4 - D7 Notes: 1. DQ-to-I/O wiring is shown as recom- mended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ, DQS, DM/DQS resistors: 22 Ohms. CS0 I/0 15 I/0 14 I/0 13 I/0 12 I/0 11 I/0 10 I/0 9 I/0 8 LDQS CSLDM DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 DQS0 DM0 I/0 7 I/0 6 I/0 5 I/0 4 I/0 3 I/0 2 I/0 1 I/0 0 UDQS UDM DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 DQS1 DM1 I/0 0 I/0 1 I/0 2 I/0 3 I/0 4 I/0 5 I/0 6 I/0 7 LDQS CSLDM I/0 8 I/0 9 I/0 10 I/0 11 I/0 12 I/0 13 I/0 14 I/0 15 UDQS UDM CS1 I/0 15 I/0 14 I/0 13 I/0 12 I/0 11 I/0 10 I/0 9 I/0 8 LDQS CSLDM DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 37 DQ 38 DQ 39 DQS4 DM4 I/0 7 I/0 6 I/0 5 I/0 4 I/0 3 I/0 2 I/0 1 I/0 0 UDQS UDM DQ 40 DQ 41 DQ 42 DQ 43 DQ 44 DQ 45 DQ 46 DQ 47 DQS5 DM5 I/0 0 I/0 1 I/0 2 I/0 3 I/0 4 I/0 5 I/0 6 I/0 7 LDQS CSLDM I/0 8 I/0 9 I/0 10 I/0 11 I/0 12 I/0 13 I/0 14 I/0 15 UDQS UDM I/0 15 I/0 14 I/0 13 I/0 12 I/0 11 I/0 10 I/0 9 I/0 8 LDQS CSLDM DQ 16 DQ 17 DQ 18 DQ 19 DQ 20 DQ 21 DQ 22 DQ 23 DQS2 DM2 I/0 7 I/0 6 I/0 5 I/0 4 I/0 3 I/0 2 I/0 1 I/0 0 UDQS UDM DQ 24 DQ 25 DQ 26 DQ 27 DQ 28 DQ 29 DQ 30 DQ 31 DQS3 DM3 I/0 0 I/0 1 I/0 2 I/0 3 I/0 4 I/0 5 I/0 6 I/0 7 LDQS CSLDM I/0 8 I/0 9 I/0 10 I/0 11 I/0 12 I/0 13 I/0 14 I/0 15 UDQS UDM I/0 15 I/0 14 I/0 13 I/0 12 I/0 11 I/0 10 I/0 9 I/0 8 LDQS CSLDM DQ48 DQ 49 DQ 50 DQ 51 DQ 52 DQ 53 DQ 54 DQ 55 DQS6 DM6 I/0 7 I/0 6 I/0 5 I/0 4 I/0 3 I/0 2 I/0 1 I/0 0 UDQS UDM DQ 56 DQ 57 DQ 58 DQ 59 DQ 60 DQ 61 DQ 62 DQ 63 DQS7 DM7 I/0 0 I/0 1 I/0 2 I/0 3 I/0 4 I/0 5 I/0 6 I/0 7 LDQS CSLDM I/0 8 I/0 9 I/0 10 I/0 11 I/0 12 I/0 13 I/0 14 I/0 15 UDQS UDM *Clock Net Wiring Card Edge D0/D2/Cap D1/D3/Cap D4/D6/Cap D5/D7/Cap R=120Ω CK0/1/2 CK0/1/2 6.2 512MB, 64M x 64 Non ECC Module (M470L6524BT(U)0)

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 (Populated as 2 bank of x8 DDR SDRAM Module) DQ4 DQ5 DQ6 DQ7 DQ0 DQ1 DQ2 DQ3 DM I/O 0 I/O 1 I/O 2 I/O 3 DM0 DM I/O 4 I/O 5 I/O 6 I/O 7 DQ12 DQ13 DQ14 DQ8 DQ9 DQ10 DQ11 DM DM DM1 DQ20 DQ21 DQ22 DQ23 DQ16 DQ17 DQ18 DQ19 DM DM D10 DM2 DQ28 DQ29 DQ30 DQ31 DQ24 DQ25 DQ26 DQ27 DM DM D11 DM3 DQ36 DQ37 DQ38 DQ39 DQ32 DQ33 DQ34 DQ35 DM DM4 DM D12 DQ44 DQ45 DQ46 DQ47 DQ40 DQ41 DQ42 DQ43 DM DM D13 DM5 DQ52 DQ53 DQ54 DQ55 DQ48 DQ49 DQ50 DQ51 DM DM D14 DQ60 DQ61 DQ62 DQ63 DQ56 DQ57 DQ58 DQ59 DM DM D15 DM7 A0 - A12 A0-A12 : DDR SDRAMs D0 - D15 RAS RAS : DDR SDRAMs D0 - D15 CAS CAS : DDR SDRAMs D0 - D15 CKE0 CKE : DDR SDRAMs D0 - D7 WE WE : DDR SDRAMs D0 - D15 CS0 CS1 CS CS CS CS CS CS CS CS CS CSCS CS CS CSCS CS CKE1 CKE : DDR SDRAMs D8 - D15 BA0 - BA1 BA0-BA1: DDR SDRAMs D0 - D15 DQS0 DQS DQS4 DQS1 DQS5 DQS DQS DQS2 DQS DQS DQS3 DQS DQS DM6 DQS6 DQS7 DQ15 DQS DQS DQSDQS DQS DQS DQS DQS DQS VSS D0 - D15 D0 - D15 VDD/VDDQ D0 - D15 D0 - D15VREF VDDSPD SPD *Clock Net Wiring Card Edge D0,D8 / D4,D12 D1,D9 / D5,D13 R=120Ω± 5% CK0 / 1 CK0 / 1 D2,D10/ D6,D14 D3,D11/ D7,D15 Notes : 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown 3. DQ, DQS, DM/DQS resistors: 22 Ohm. CK2 CK2 10pF I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 6.3 1GB, 128M x 64 Non ECC Module (M470L2923BN(V)0)

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Parameter Symbol Value Unit Voltage on any pin relative to VSS VIN,VOUT -0.5 ~ 3.6 V Voltage on VDD & VDDQ supply relative to VSS VDD,VDDQ -1.0 ~ 3.6 V Storage temperature T STG -55 ~ +150 °C Power dissipation P D 1.5 * # of component W Short circuit current I OS 50 mA Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C) Note : 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to source voltages from 0.1 to 1.0. Parameter Symbol Min Max Unit Note Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333) V DD 2.3 2.7 V Supply voltage(for device with a nominal VDD of 2.6V for DDR400) V DD 2.5 2.7 V I/O Supply voltage(for device with a nominal VDD of 2.5V for DDR266/333) V DDQ 2.3 2.7 V I/O Supply voltage(for device with a nominal VDD of 2.6V for DDR400) V DDQ 2.5 2.7 V I/O Reference voltage V REF 0.49*VDDQ 0.51*VDDQ V 1 I/O Termination voltage(system) V TT VREF-0.04 V REF+0.04 V2 Input logic high voltage V IH(DC) V REF+0.15 V DDQ+0.3 V Input logic low voltage V IL(DC) -0.3 V REF-0.15 V Input Voltage Level, CK and CK inputs V IN(DC) -0.3 V DDQ+0.3 V Input Differential Voltage, CK and CK inputs V ID(DC) 0.36 V DDQ+0.6 V 3 V-I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 - 4 Input leakage current I I -2 2 uA Output leakage current I OZ -5 5 uA Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V IOH -16.8 mA Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V IOL 16.8 mA Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V IOH -9 mA Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V IOL 9m A

8.0 DC Operating Conditions

7.0 Absolute Maximum Ratings

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 660 500 440 440 mA IDD1 760 620 560 560 mA I D D 2 P 2 02 02 02 0 m A IDD2F 120 120 120 120 mA IDD2Q 100 100 80 80 mA IDD3P 220 120 120 120 mA IDD3N 400 200 200 200 mA IDD4R 920 780 680 680 mA IDD4W 1,120 860 760 760 mA IDD5 1,060 1,000 960 960 mA IDD6 N o r m a l 2 02 02 02 0 m A Low power 12 12 12 12 mA Optional IDD7A 1,800 1,620 1,440 1,440 mA (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 1,060 700 640 640 mA IDD1 1,160 820 760 760 mA I D D 2 P 4 04 04 04 0 m A IDD2F 240 240 240 240 mA IDD2Q 200 200 160 160 mA IDD3P 440 240 240 240 mA IDD3N 800 400 400 400 mA IDD4R 1,320 980 880 880 mA IDD4W 1,520 1,060 960 960 mA IDD5 1,460 1,200 1,160 1,160 mA IDD6 N o r m a l 4 04 04 04 0 m A Low power 24 24 24 24 mA Optional IDD7A 2,200 1,820 1,640 1,640 mA

9.1 M470L3324BT(U)0 [ (32M x 64) 256MB Module ]

9.2 M470L6524BT(U)0 [ (64M x 64) 512MB Module ]

9.0 DDR SDRAM IDD spec table

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 (VDD=2.7V, T = 10°C) * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Symbol CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes IDD0 2,080 1,400 1,280 1,280 mA IDD1 2,240 1,600 1,480 1,480 mA I D D 2 P 8 08 08 08 0 m A IDD2F 480 480 480 480 mA IDD2Q 400 400 400 400 mA IDD3P 560 480 480 480 mA IDD3N 1,520 800 800 800 mA IDD4R 2,360 1,840 1,600 1,600 mA IDD4W 2,680 1,880 1,640 1,640 mA IDD5 2,880 2,400 2,320 2,320 mA IDD6 N o r m a l 8 08 08 08 0 m A Low power 48 48 48 48 mA Optional IDD7A 4,200 3,520 3,120 3,120 mA

9.3 M470L2923BV0 [ (128M x 64) 1GB Module ]

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 Output Load Circuit (SSTL_2) Output Z0=50Ω CLOAD=30pF VREF =0.5*VDDQ RT=50Ω Vtt=0.5*VDDQ ( TA= 25°C, f=100MHz) Parameter Symbol M470L3324BT(U) M470L6524BT(U) M470L2923BN(V) Unit Min Max Min Max Min Max Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE ) C I N 1 4 14 54 95 76 58 1 p F Input capacitance(CKE0,CKE1) CIN2 34 38 42 50 42 50 pF Input capacitance( CS 0, CS1) CIN3 34 38 42 50 42 50 pF Input capacitance( CLK0, CLK1,CLK2) CIN4 25 30 25 30 28 34 pF I n p u t c a p a c i t a n c e ( D M 0 ~ D M 7 ) C I N 5 6767 1 0 1 2 p F D a t a & D Q S i n p u t / o u t p u t c a p a c i t a n c e ( D Q 0 ~ D Q 6 3 ) C o u t 1 6767 1 0 1 2 p F Note : 1. VID is the magnitude of the difference between the input level on CK and the input on CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. 3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in simulation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz. Parameter/Condition Symbol Min Max Unit Note Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V 3 Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) VREF - 0.31 V 3 Input Differential Voltage, CK and CK inputs VID(AC) 0.7 VDDQ+0.6 V 1 Input Crossing Point Voltage, CK and CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2

11.0 Input/Output Capacitance

10.0 AC Operating Conditions

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 Parameter Symbol CC (DDR400@CL=3.0) (DDR333@CL=2.5) (DDR266@CL=2.0) (DDR266@CL=2.5) Unit Note Min Max Min Max Min Max Min Max Row cycle time tRC 55 60 65 65 ns Refresh row cycle time tRFC 70 72 75 75 ns Row active time tRAS 40 70K 42 70K 45 70K 45 70K ns RAS to CAS delay tRCD 15 18 20 20 ns Row precharge time tRP 15 18 20 20 ns Row active to Row active delay tRRD 10 12 15 15 ns Write recovery time tWR 15 15 15 15 ns Last data in to Read command tWTR 2 1 1 1 tCK Clock cycle time CL=2.0 tCK - - 7.5 12 7.5 12 10 12 ns C L = 2 . 5 61 261 2 7 . 5 1 2 7 . 5 1 2 n s DQS-out access time from CK/CK Data strobe edge to ouput data edge tDQSQ - 0.4 - 0.45 - 0.5 - 0.5 ns 22 DQS-in setup time tWPRES 0 0 0 0 ns 13 DQS-in hold time tWPRE 0.25 0.25 0.25 0.25 tCK DQS falling edge to CK rising-setup time tDSS 0.2 0.2 0.2 0.2 tCK DQS falling edge from CK rising-hold time tDSH 0.2 0.2 0.2 0.2 tCK DQS-in high level width tDQSH 0.35 0.35 0.35 0.35 tCK DQS-in low level width tDQSL 0.35 0.35 0.35 0.35 tCK Address and Control Input setup time(fast) tIS 0.6 0.75 0.9 0.9 ns 15, 17~19 Address and Control Input hold time(fast) tIH 0.6 0.75 0.9 0.9 ns 15, 17~19 Address and Control Input setup tIS 0.7 0.8 1.0 1.0 ns 16~19 Address and Control Input hold time(slow) tIH 0.7 0.8 1.0 1.0 ns 16~19 Data-out high impedence time from CK/CK Mode register set cycle time tMRD 10 12 15 15 ns DQ & DM setup time to DQS tDS 0.4 0.45 0.5 0.5 ns j, k DQ & DM hold time to DQS tDH 0.4 0.45 0.5 0.5 ns j, k Control & Address input pulse width tIPW 2.2 2.2 2.2 2.2 ns 18 DQ & DM input pulse width tDIPW 1.75 1.75 1.75 1.75 ns 18 Exit self refresh to non-Read command tXSNR 75 75 75 75 ns Exit self refresh to read command tXSRD 200 200 200 200 tCK Refresh interval time tREFI 7.8 7.8 7.8 7.8 us 14 Output DQS valid window tQH tHP -tQHS - tHP -tQHS - tHP -tQHS - tHP -tQHS -n s 2 1 Clock half period tHP tCLmin or tCHmin - tCLmin or tCHmin - tCLmin or tCHmin - tCLmin or tCHmin - ns 20, 21 Data hold skew factor tQHS 0.5 0.55 0.75 0.75 ns 21 Active to Read with Auto precharge command tRAP 15 18 20 20 Autoprecharge write recovery + Precharge time tDAL (tWR/tCK) (tRP/tCK) (tWR/tCK) (tRP/tCK) (tWR/tCK) (tRP/tCK) (tWR/tCK) (tRP/tCK) tCK 23

12.0 AC Timming Parameters & Specifications

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 The following specification parameters are required in systems using DDR333, DDR266 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table 1 : Input Slew Rate for DQ, DQS, and DM Table 2 : Input Setup & Hold Time Derating for Slew Rate Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only) Table 6 : Output Slew Rate Characteristice (X16 Devices only) Table 7 : Output Slew Rate Matching Ratio Characteristics AC CHARACTERISTICS DDR333 DDR266 PARAMETER SYMBOL MIN MAX MIN MAX Units Notes DQ/DM/DQS input slew rate measured between VIH(DC), VIL(DC) and VIL(DC), VIH(DC) DCSLEW TBD TBD TBD TBD V/ns a, m Input Slew Rate ∆tIS ∆tIH Units Notes

0.5 V/ns 0 0 ps i

0.4 V/ns +50 0 ps i

0.3 V/ns +100 0 ps i

Input Slew Rate ∆tDS ∆tDH Units Notes

0.5 V/ns 0 0 ps k

0.4 V/ns +75 +75 ps k

0.3 V/ns +150 +150 ps k

Delta Slew Rate ∆tDS ∆tDH Units Notes +/- 0.0 V/ns 0 0 ps j Slew Rate Characteristic Typical Range (V/ns) Minimum (V/ns) Maximum (V/ns) Notes Pullup Slew Rate 1.2 ~ 2.5 1.0 4.5 a,c,d,f,g,h Pulldown slew 1.2 ~ 2.5 1.0 4.5 b,c,d,f,g,h Slew Rate Characteristic Typical Range (V/ns) Minimum (V/ns) Maximum (V/ns) Notes Pullup Slew Rate 1.2 ~ 2.5 0.7 5.0 a,c,d,f,g,h Pulldown slew 1.2 ~ 2.5 0.7 5.0 b,c,d,f,g,h AC CHARACTERISTICS DDR333 DDR266 PARAMETER MIN MAX MIN MAX Notes Output Slew Rate Matching Ratio (Pullup to Pulldown) TBD TBD TBD TBD e,m

13.0 System Characteristics for DDR SDRAM

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 1. All voltages referenced to Vss. 2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related speci- fications and device operation are guaranteed for the full voltage range specified. 3. Figure 1 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise rep- resentation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics). 4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to VREF (or to the cross- ing point for CK/CK), and parameter specifications are guaranteed for the specified ac input levels under normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac). 5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the dc input LOW (HIGH) level. 6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE ≤ 0.2VDDQ is recognized as LOW. 7. Enables on.chip refresh and address counters. 8. IDD specifications are tested after the device is properly initialized. 9. The CK/CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross; the input reference level for signals other than CK/CK, is VREF. 10. The output timing reference voltage level is VTT. 11. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ). 12. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys tem performance (bus turnaround) will degrade accordingly. 13. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 14. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 15. For command/address input slew rate ≥ 1.0 V/ns 16. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns 17. For CK & CK slew rate ≥ 1.0 V/ns 18. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. 19. Slew Rate is measured between VOH(ac) and VOL(ac). 20. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces. 21. tQH = tHP - tQHS, where: tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The pulse duration dis- tortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst case pull-in of DQ on the next transi- tion, both of which are, separately, due to data pin skew and output pattern effects, and p channel to n-channel variation of the output drivers. 22. tDQSQ - Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle. 23. tDAL = (tWR/tCK) + (tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3) tDAL = 5 clocks Output VDDQ 50Ω 30pF(Vout) Figure 1 : Timing Reference Load

14.0 Component Notes

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 b. Pulldown slew rate is measured under the test conditions shown in Figure 3. Output Test point VDDQ 50Ω Figure 3 : Pulldown slew rate test load c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV) Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV) Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching. Example : For typical slew rate, DQ0 is switching For minmum slew rate, all DQ bits are sw itching from either high to low, or low to high. The remaining DQ bits remain the same as for previous state. d. Evaluation conditions Typical : 25 °C (T Ambient), VDDQ = 2.5V(for DDR266/333) and 2.6V(for DDR400), typical process Minimum : 70 °C (T Ambient), VDDQ = 2.3V(for DDR266/333) and 2.5V(for DDR400), slow - slow process Maximum : 0 °C (T Ambient), VDDQ = 2.7V(for DDR266/333) and 2.7V(for DDR400), fast - fast process e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. f. Verified under typical conditions for qualification purposes. g. TSOPII package divices only. h. Only intended for operation up to 266 Mbps per pin. i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The delta rise/fall rate is calculated as: {1/(Slew Rate1)} - {1/(Slew Rate2)} For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this would result in the need for an increase in tDS and tDH of 100 ps. k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions. m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the DC region must be monotonic. a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. Output Test point VSSQ 50Ω Figure 2 : Pullup slew rate test load

15.0 System Notes:

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 (V=Valid, X=Don′t Care, H=Logic High, L=Logic Low) Note : 1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS) 2. EMRS/ MRS can be issued only at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA 0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If BA 0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected. If BA 0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected. If both BA 0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. 5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected. 6. During burst write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at t RP after the end of burst. 7. Burst stop command is valid at every burst length. 8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0). 9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM. COMMAND CKEn-1 CKEn CS RAS CAS WE BA0,1 A10/AP A0 ~ A9 A11, A12 Note Register Extended MRS H X L L L L OP CODE 1, 2 Register Mode Register Set H X L L L L OP CODE 1, 2 Refresh Auto Refresh H H LL LH X Self Refresh Entry L 3 Exit L H LH HH X HX XX 3 Bank Active & Row Addr. H X L L H H V Row Address (A0~A9, A11,A12) Read & Column Address Auto Precharge Disable HX L H L H V L Column Address Auto Precharge Enable H 4 Write & Column Address Auto Precharge Disable HX L H L L V L Column Address Auto Precharge Enable H 4, 6 Burst Stop H X L H H L X 7 Precharge Bank Selection HX L L H L VL X All Banks X H 5 Active Power Down Entry H L HX XX XLV VV Exit L H X X X X Precharge Power Down Mode Entry H L HX XX X LH HH Exit L H HX XX LV VV DM H X X 8 No operation (NOP) : Not defined H X HX XX X LH HH 9

16.0 Command Truth Table

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 17.1 32M x 64 (M470L3324BT(U)) Tolerances : ±.006(.15) unless otherwise specified The used device is 32Mx16 SDRAM, TSOPII SDRAM Part No. : K4H511638B 2.70 2.50 Units : Inches (Millimeters) Full R 2.0 0.17 (4.20) 0.456 11.40 1.896 (47.40) 0.24 (6.0) 0.086 0.79 (20.00) 2.15 (63.60) (67.60) Detail Z 0.16 ± 0.0039 (4.00 ± 0.10) 0.04 ± 0.0039 (1.00 ± 0.1) 2-φ 0.07 (1.8+0.1/-0.0) 1.25 (31.75) 0.16 ± 0.039 (4.00 ± 0.10) 0.096 (2.40+/-0.1) 0.07 (1.8+/-0.1)

0.150 Max

0.04 ± 0.0039 (1.00 ± 0.10)

0.157 Min

(4.00 Min) (3.80 Max) (4.00 Min)

0.024 TYP

0.018 ± 0.001 0.01 (0.2+/-0.15) (0.60 TYP)

0.102 Min

(2.55 ) Detail Y 0.098 2.45 40 42 39 41 Z Y 199 200

17.0 Physical Dimensions

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 Tolerances : ±.006(.15) unless otherwise specified The used device is 32Mx16 SDRAM, TSOPII SDRAM Part No. : K4H511638B 2.70 2.50 Units : Inches (Millimeters) Full R 2.0 0.17 (4.20) 0.456 11.40 1.896 (47.40) 0.24 (6.0) 0.086 0.79 (20.00) 2.15 (63.60) (67.60) Detail Z 0.16 ± 0.0039 (4.00 ± 0.10) 0.04 ± 0.0039 (1.00 ± 0.1) 2-φ 0.07 (1.8+0.1/-0.0) 1.25 (31.75) 0.16 ± 0.039 (4.00 ± 0.10) 0.096 (2.40+/-0.1) 0.07 (1.8+/-0.1) 0.04 ± 0.0039 (1.00 ± 0.10) (4.00 Min) (3.80 Max) (4.00 Min) 0.018 ± 0.001 0.01 (0.2+/-0.15) (0.60 TYP) (2.55 ) Detail Y 0.098 2.45 40 42 39 41 Z Y 199 200 17.2 64Mx64 (M470L6524BT(U))

DDR SDRAM256MB, 512MB, 1GB Unbuffered SODIMM Rev. 1.5 June 2005 Tolerances : ±.006(.15) unless otherwise specified The used device is 64Mx8 DDR SDRAM, sTSOPII-300mil SDRAM Part No. : K4H510838B 2.70 2.50 Full R 2x 0.17 (4.20) 0.456 11.40 1.896 (47.40) 0.24 (6.0) 0.086 0.79 (20.00) 2.15 (63.60) (67.60) Detail Z 0.16 ± 0.0039 (4.00 ± 0.10) 0.04 ± 0.0039 (1.00 ± 0.1) 2-φ 0.07 (1.80) 1.25 (31.75) 0.16 ± 0.039 (4.00 ± 0.10) 0.096 (2.40) 0.07 (1.8) 0.04 ± 0.0039 (1.00 ± 0.10) (4.00 Min) (3.80 Max) (4.00 Min) 0.018 ± 0.001 0.008 ¡¾ 0.006 (0.20 ¡¾ 0.15) (0.45 ± 0.03) (0.60 TYP) (2.55 Min) Detail Y 0.098 2.45 40 42 39 41 Z Y 199 200 Units : Inches (Millimeters) 17.3 128Mx64 (M4702923BN(V))